Selected publications on in situ TEM
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General
[1] F. M. Ross, Growth processes and phase transformations studied by in situ transmission electron microscopy. IBM Journal of Research 44, 489 (2000).
[2] F. M. Ross, Dynamic studies of semiconductor growth processes using in situ electron microscopy, Materials Research Society Bulletin 26, 94 (2001).
Self-assembled growth of Ge islands on Si
[1] F. M. Ross, J. Tersoff and R. M. Tromp, Coarsening of self-assembled Ge quantum dots on Si(100), Physical Review Letters 80, 984 (1998).
[2] F. M. Ross, R. M. Tromp and M. C. Reuter, Transition states between pyramids and domes during Si/Ge island growth, Science 286, 1931 (1999).
[3] R. M. Tromp, F. M. Ross and M. C. Reuter, Instability-driven SiGe island growth. Physical Review Letters 84, 4641 (2000).
[4] F. M. Ross, F. K. LeGoues, J. Tersoff, R. M. Tromp and M. Reuter, In situ transmission electron microscopy observations of the formation of self-assembled Ge islands on Si, Microscopy Research and Technique 42, 281 (1998).
[5] R. M. Tromp and F. M. Ross, Advances in in situ ultra-high vacuum transmission electron microscopy: Growth of SiGe on Si. Annual Reviews of Materials Science 30, 431 (2000).
[6] F. LeGoues, M. Hammar, M. C. Reuter and R. M. Tromp, In situ TEM study of the growth of Ge on Si(111). Surface Science 349, 249 (1996).
[7] F. LeGoues, M.C. Reuter, J. Tersoff, M. Hammar and R. M. Tromp, Cyclic growth of strain-relaxed islands, Physical Review Letters 73, 300 (1994).
Lateral control of island growth
[1] M. Kammler, R. Hull, M. C. Reuter and F. M. Ross, Lateral control of self-assembled island nucleation by focused-ion-beam micropatterning, Applied Physics Letters 82, 1093 (2002).
[2] R. Hull, J. L. Gray, M. Kammler, S. Atha, P. Kumar, T. Vanderwalde, J. C. Bean, J. A. Floro and F. M. Ross, Precision placement of heteroepitaxial semiconductor quantum dots, to appear in Mat. Sci. Eng. C (2003).
Misfit dislocation kinetics in SiGe/Si
[1] E. A. Stach, K. W. Schwarz, R. Hull, F. M. Ross and R. M. Tromp, New mechanism for dislocation blocking in strained layer heteroepitaxial growth. Physical Review Letters 84, 947 (2000).
[2] E. A. Stach, R. Hull, R. M. Tromp, F. M. Ross, M. C. Reuter and J. C. Bean, In situ transmission electron microscopy studies of the interaction between dislocations in strained SiGe/Si(001) heterostructures, Philosophical Magazine A 80, 2159 (2000).
Silicides
[1] F. M. Ross, P. A. Bennett, R. M. Tromp, J. Tersoff and M. Reuter, Growth of CoSi2 and Ge islands observed with in situ transmission electron microscopy, Micron 30, 21 (1999).
[2] X. H. Liu, F. M. Ross and K. W. Schwarz, Dislocated quantum dots, Physical Review Letters 85, 4088 (2000).
Phase transformations in polycrystalline films
[1] D. N. Dunn, R. Hull, F. M. Ross and R. M. Tromp, Texture transformations in reactive metal films deposited upon amorphous substrates, J. Applied Physics 89, 2635 (2001).
Liquid phase growth
[1] F. M. Ross, M. J. Williamson, R. M. Tromp, R. Hull and P. M. Vereecken, In situ TEM of copper electrodeposition, Proceedings of Microscopy & Microanalysis 2002, August 2002.
[2] M. J. Williamson, R. M. Tromp, P. M. Vereecken, R. Hull and F. M. Ross, Dynamic electron microscopy in liquid environments, to appear in Nature Materials (Aug 2003).
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