Publications
- J. B. Héroux, K. Takaki, M. Tokunari and S. Nakagawa, “20 Gbps optical link with high efficiency 1060 nm VCSEL”, Proc. SPIE 7944-9 (2011).
- J.B. Héroux, K. Takaki, C. Schow, A. V. Rylyakov, R. John and S. Nakagawa, ”Optical transmitter with 1060 nm VCSEL for low power interconnect“,OSA/OFC/NFOEC 2011, JThA45
- J.B. Héroux and W. I. Wang, “Dilute nitride photodetector and modulator devices”, in Dilute III-V Nitride Semiconductors and Material Systems - Physics and Technology, Springer Series in Materials Science, Vol. 105 (2008).
- E. Kojima, J.B. Héroux, R. Shimano, Y. Hashimoto, S. Katsumoto, Y. Iye and M. Kuwata-Gonokami, “Experimental investigation of polaron effects in GaMnAs by time-resolved and continuous-wave midinfrared spectroscopy”, Phys. Rev. B 76, in press (2007).
- J.B. Héroux, Y. Hashimoto, S. Katsumoto and M. Kuwata-Gonokami, “Magnetization-induced terahertz radiation from GaMnAs”, Phys. Stat. Sol. (c) 12, 4271 (2006).
- J.B. Héroux, Y. Ino, M. Kuwata-Gonokami, Y. Hashimoto and S. Katsumoto, “Terahertz radiation emission from ferromagnetic GaMnAs”, Appl. Phys. Lett. 88, 221110 (2006).
- Y. Ino, J.B. Héroux, M. Mukayama and M. Kuwata-Gonokami, “Reflection-type pulsed terahertz imaging with a phase-retrieval algorithm”, Appl. Phys. Lett. 88, 41114 (2006).
- J.B. Héroux, E. Kojima, Y. Ino, S. Katsumoto, Y. Iye and M. Kuwata-Gonokami, “Ultrafast magneto-optical spectroscopy of Ga0.94Mn0.06As”, Proc. SPIE 5725, 157 (2005).
- W. Li, J.B. Héroux, H. Shao, W.I. Wang, I. Vurgaftman and J.R. Meyer, “Midinfrared InAs/InGaSb "W" diode lasers with digitally grown tensile-strained AlGaAsSb barriers”, J. Vac. Sci Tech. 23, 1136 (2005).
- W. Li W, J.B. Héroux, H. Shao and W. Wang, “High-T-0 strain-compensated InGaAsSb-AlGaAsSb quantum-well lasers emitting at 2.43 μm”, IEEE Phot. Tech. Lett. 17, 531 (2005).
- E. Kojima, J.B. Héroux, R. Shimano, Y.I. Hashimoto, S. Katsumoto, Y. Iye and M. Kuwata-Gonokami, “Photo-induced demagnetization observed by time-resolved mid-infrared transmittance spectroscopy in Ga0.94Mn0.06As”, Ultrafast Phenomena XIV, Springer, 319 (2004).
- J.B. Héroux, C.W. Pei and W.I. Wang “Epitaxial growth of InGaAsSb/AlGaAsSb heterostructures for mid-infrared lasers based on strain engineering”, J. Vac. Sci. Tech. 22, 2240 (2004).
- C.W. Pei, J.B. Héroux and W.I. Wang, “Molecular beam epitaxial growth of mid-infrared InGaAsSb laser diodes on indium-free GaSb substrates”, J. Vac. Sci. Tech. 22, 1460 (2004).
- W. Li, J.B. Héroux, H. Shao and W.I. Wang, “Strain-compensated InGaAsSb/AlGaAsSb mid-infrared quantum-well lasers”, Appl. Phys. Lett. 84, 2016 (2004).
- N. Kouklin, H. Chik, J. Liang, M. Tzolov, J.M. Xu, J.B. Héroux and W.I. Wang, “Highly periodic, three-dimensionally arranged InGaAsN : Sb quantum dot arrays fabricated nonlithographically for optical devices”, J. Phys. D 36, 2634 (2003).
- S. Syed, J.B. Héroux, Y.J. Wang, M.J. Manfra, R.J. Molnar and H.L. Stormer, “Nonparabolicity of the conduction band of wurtzite GaN”, Appl. Phys. Lett. 83, 4553 (2003).
- W. Li, J.B. Héroux and W.I. Wang, “InGaAsSbN: A dilute nitride compound for midinfrared optoelectronic devices”, J. Appl. Phys. 94, 4248 (2003).
- J.B. Héroux, X. Yang and W.I. Wang, “Quantum confined Stark effect in GaInNAs/GaAs multiple quantum wells”, IEE Proceedings: Optoelectronics 150, 92 (2003).
- J.B. Héroux, X. Yang and W.I. Wang, “Photoreflectance spectroscopy of strained (In)GaAsN/GaAs multiple quantum wells”, J. Appl. Phys. 92, 4361 (2002).
- J.B. Héroux, X. Yang and W.I. Wang, “Optical characterization of strained InGaAsN/GaAs multiple quantum wells”, J. Vac. Sci. Tech. B 20, 1154 (2002).
- C.W. Pei, J.B. Héroux, J. Sweet, W.I. Wang, W.I. Chen and M.F. Chang, “High quality GaAs grown on Si-on-insulator compliant substrates”, J. Vac. Sci. Tech. B 20, 1196 (2002).
- J.B. Héroux, X. Yang and W.I. Wang, “Optical investigation of InGaAsN structures for photodetector applications” Proc. SPIE 4288, 238 (2001).
- C.W. Pei. B. Turk, J.B. Héroux and W.I. Wang, “GaN grown by molecular beam epitaxy with antimony as surfactant”, J. Vac. Sci. Tech. B 19, 1426 (2001).
- X. Yang, J.B. Héroux, L.F. Mei and W.I. Wang, “InGaAsNSb/GaAs quantum wells for 1.55 μm lasers grown by molecular-beam epitaxy”, Appl. Phys. Lett. 78, 4068 (2001).
- X. Yang, J.B. Héroux, M.J. Jurkovic and W.I. Wang, “Low-threshold 1.3 μm InGaAsN:Sb-GaAs single-quantum-well lasers grown by molecular beam epitaxy”, IEEE Phot. Tech. Lett. 12, 128 (2000).
- X. Yang, J.B. Héroux, M.J. Jurkovic and W.I. Wang, “High-temperature characteristics of 1.3 μm InGaAsN:Sb/GaAs multiple-quantum-well lasers grown by molecular-beam epitaxy”, Appl. Phys. Lett. 76, 795 (2000).
- J.B. Héroux, X. Yang and W.I. Wang, “GaInNAs resonant-cavity-enhanced photodetector operating at 1.3 μm”, Appl. Phys. Lett. 75 (18), 2716 (1999).
- X. Yang, J.B. Héroux, M.J. Jurkovic and W.I. Wang, “Photoluminescence of as-grown and thermally annealed InGaAsN/GaAs quantum wells grown by molecular beam epitaxy”, J. Vac. Sci. Tech. B 17, 1144 (1999).
- X. Yang, M.J. Jurkovic, J.B. Héroux and W.I. Wang, “Low threshold InGaAsN/GaAs single quantum well lasers grown by molecular beam epitaxy using Sb as a surfactant”, Elec. Lett. 35, 1082 (1999).
- X. Yang, M.J. Jurkovic, J.B. Héroux and W.I. Wang, “Molecular beam epitaxial growth of InGaAsN:Sb/GaAs quantum wells for long-wavelength semiconductor lasers”, Appl. Phys. Lett. 75, 178 (1999).
- S. Boughaba, J.B. Héroux, M. Curcio, E. Sacher and M. Meunier, “Removal of particulate contamination from silicon surfaces with laser-based cleaning technology”, in Particles on surfaces 5&6: Detection, Adhesion and Removal, K.L. Mittal, Ed., (1999).
- X. Li, Q. Du, J.B. Héroux and W.I. Wang, “n-channel AlSb/GaSb modulation-doped field-effect transistors”, Sol. St. Elec. 41, 1853 (1997).
- J.B. Héroux, S. Boughaba, S. Ressejac, E. Sacher, and M. Meunier, “CO2 laser-assisted removal of submicron particles from solid surfaces”, J. Appl. Phys. 79 (6), 2857 (1996).
- J.B. Héroux, S. Boughaba, E. Sacher, and M. Meunier, “CO2 laser-assisted particle removal from silicon surfaces”, Can. J. Phys. 74 (1), S95 (1996).