IBM Zurich Research Laboratory
IBM Zurich Research Laboratory

FIELD EFFECT DEVICES BUILT FROM HIGH-Tc SUPERCONDUCTORS

We are exploring the possibility of fabricating ultrafast field effect transistors (FETs) with high-Tc superconductors. These FETs are designed to have no losses in their 'on state'

Cross-section through a superconducting FET:

Figure 1

Output current of a superconducting FET vs. input voltage:

Figure 1

Reference:

J. Mannhart, "High Tc Transistors," Supercond. Sci. Technol. 9, 49-67 (1996).

Superconductivity Group Home Page |
T. J. Watson Research Center | Zurich Research Laboratory |
IBM home page | Order | Search | Contact IBM | Help | (C) | (TM)