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Nanoscale science department

 

 


 

 

Publications 1997-2001

 

  • V. Derycke, R. Martel, J. Appenzeller, and Ph. AvourisCarbon Nanotube Inter- and Intramolecular Logic Gates, Nano Letters 1, 453-456 (2001).
  • J. Appenzeller, R. Martel, Ph. Avouris, J. Knoch, Y. Lu, K.L. Wang, J. Scholvin, J.A. del Alamo, P. Rice, and P. Solomon, Sub-40nm V-groove MOSFETs, 59th Device Research Conference ISBN: 0-7803-7014-7, 95-96 (2001).
  • Martel, H.-S. P. Wong, K. Chan, and Ph. Avouris, Carbon Nanotube field effect transistors for logic applications, IEDM Tech. Dig. pp. 159-162 (2001).
  • R Martel, V Derycke, Ph. Avouris, Amipolar single wall Carbon Nanotube transistor and inverters, AIP, No. 591, 543 (2001)
  • H. Stahl, J. Appenzeller, B. Lengeler, R. Martel, and Ph. Avouris, Investigation of the inter-tube coupling in single-wall Nanotube ropes, Materials Science & Engineering C, 15, 291-294 (2001).
  • J. Appenzeller, R. Martel, J. Knoch, K. Chan, Ph. Avouris, M. Tanner, K.L. Wang, J.A. del Alamo, and P. Solomon, A 10nm MOSFET concept, Microelectronic Engineering,  56, 213-219 (2001).
  • J. Appenzeller, H. Stahl, B. Langeler, R. Martel, and Ph. Avouris, Optimized Contact Configuration for the Study of Transport Phenomena in Ropes of Single-Wall Carbon Nanotubes, Appl. Phys. Letters 78, 3313 (2001).
  • J. Knoch, J. Appenzeller, B. Lengeler, R. Martel, P. Solomon, Ph. Avouris, Ch. Dieker, Y. Lu, K.L. Wang, J. Scholvin, and J.A. del Alamo, Technology for the fabrication of ultrashort channel metal-oxide-semiconductor field-effect transistors, Journal of Vacuum Science Technology A, 19, 1737-1741 (2001).
  • J. Appenzeller, R. Martel, Ph. Avouris, H. Stahl, Th. Hunger, and B. Lengeler, Phase coherent transport in ropes of single-wall carbon nanotubes, Phys. Review B 64, 121404(R) (2001).
  • P. G. Collins, M. Hersam, M. Arnold, R. Martel, and Ph. AvourisCurrent Saturation and Electrical Breakdown in Multiwalled Carbon Nanotubes, Physical Review Letters  86, 3128 (2001).
  • Rochefort, M. Di Ventra, and Ph. AvourisSwitching Behavior of Semiconducting Carbon Nanotubes under an External Electric Field, Appl. Phys. Letters 78, 2521 (2001).
  • K. Liu, Ph. Avouris, R. Martel and W. K. Hsu, Electrical Transport in Doped Multiwalled Carbon Nanotubes, Phys. Review B 63, R161404 (2001).
  • P. G. Collins, M. S. Arnold, and Ph. AvourisEngineering Carbon Nanotubes and Nanotube Circuits Using Electrical Breakdown, Science  292, 706 (2001).
  • R. Martel, V. Derycke, C. Lavoie, J. Appenzeller, K. Chan, J. Tersoff, and Ph. Avouris, Ambipolar electrical transport in semiconducting single-wall Carbon Nanotubes, Phys. Rev. Lett.  87, 256805 (2001).
  • N. D. Lang and Ph. Avouris, Electrical Conductance of individual molecules, Phys. Review B 64, 125323 (2001).
  • N. D. Lang and Ph. AvourisElectrical Conductance of Parallel Atomic Wires, Phys. Review B  62, 7325 (2001).
  • Rochefort and Ph. Avouris, Quantum size effects in carbon nanotube intermolecular junctions, Nano Letters 2, 253 (2001).
  • Book: Carbon Nanotubes: Synthesis, Structure, Properties, and Applications, M.     Dresselhaus, G. Dresselhaus and Ph. Avouris, Eds. (Springer-Verlag, Berlin, 2001).
  • A. Rochefort and Ph. Avouris, Electron Interference Effects on the Conductance of Doped Carbon Nanotubes, J. Phys. Chem. A, 104, 9807 (2000).
  • P. G. Collins and Ph. Avouris, Nanotubes for Electronics, Scientific American 283, 38 (2000).
  • H. Stahl, J. Appenzeller, R. Martel, Ph. Avouris, and B. Lengeler, Intertube Coupling in Ropes of Single-Wall Carbon Nanotubes, Phys. Rev. Lett. 85, 5186 (2000).
  • H. R. Shea, R. Martel, and Ph. AvourisElectrical Transport in Rings of Single-Wall Nanotubes: One-Dimensional Localization, Phys. Rev. Lett. 19, 4441 (2000).
  • Ph. Avouris and R. Martel, “Carbon Nanotubes: Interactions, Manipulation, Electrical Properties and Devices”, Physics and Chemistry of Nanostructure Materials, ed. S. Yang and P. Sheng, p. 79-111 (Taylor and Francis, London, 2000).
  • Ph. Avouris, R. Martel, H. Ikeda, M. Hersam, H. R. Shea, and A. Rochefort, Electrical Properties of Carbon Nanotubes: Spectroscopy, Localization and Electrical Breakdown, published under the title: Science and Application of Nanotubes, Eds. D. Tomanek and R.J. Enbody, volume in the Fundamental Materials Research Series, p.223 -237 (Kluwer - Academic - Plenum Publishiers , NY, 2000).
  • N. D. Lang and Ph. Avouris, Carbon Atom Wires: Charge-transfer Doping, Voltage Drop, and the Effect of Distortions, Phys. Review Letters 84, 358 (2000). 
  • N. D. Lang and Ph. Avouris, Electrical Conductance of Parallel Atomic Wires, Phys. Review B 62, 7325 (2000).
  • P. G. Collins, R. Martel, K. Liu, and Ph. Avouris, Multiple-Shell Diffusive Conduction in Multi-Walled Carbon Nanotubes, in Electronic Properties of Novel Materials - Science and Technology of Molecular Nanostructures, H. Kuzmany et al., Editors (American Institute of Physics Press, Melville, New York, 2000).
  • H. R. Shea, R. Martel, and Ph. Avouris, Electrical Transport in Rings of Single-Walled Nanotubes, Phys. Review Letters 84, 4441 (2000).
  • J. Appenzeller, R. Martel, P. Solomon, K. Chan, Ph. Avouris, J. Knoch, J. Benedict, M. Tanner, S. Thomas, K. L. Wang, J. A. del Alamo, A Scheme for the fabrication of ultrashort channel metal-oxide-semiconductor field-effect transistors, Appl. Phys. Letters 77, 298 (2000).
  • U. Landman, R. N. Barnett, A. G. Scherbakov, and Ph. AvourisMetal-Semiconductor Nanocontacts: Silicon Nanowires, Phys. Review Letters 85, 1958 (2000).
  • Rochefort, D. R. Salahub, and Ph. Avouris, Effects of Finite Length on the Electronic Structure of Carbon Nanotubes, J. Phys. Chem. B,  103, 641 (1999).
  • Ph. Avouris, T. Hertel, R. Martel, T. Schmidt, H.R. Shea, and R.E. Walkup, Carbon Nanotubes: Nanomechamics, Manipulation, and Electronic Devices, Appl. Surf. Science, 141, 201 (1999).
  • R. Martel, H. R. Shea, and Ph. Avouris, Rings of Single-Walled Carbon Nanotubes, Nature (London) 398, 299 (1999).
  • R. Martel, H. R. Shea, and Ph. Avouris, Rings formation in single-walled carbon nanotubes, J. Phys. Chem. B,  103, 7551 (1999).
  • H. R. Shea, R. Martel, T. Hertel, T. Schmidt, and Ph. Avouris, Manipulation of Carbon Nanotubes and Properties of Nanotube Field-Effect Transistors and Rings, Microelectronic Engr., 46, 101 (1999).
  • R. Martel, T. Schmidt, R. L. Sandstrom, and Ph. Avouris, Current-Induced Nanochemistry: Local Oxidation of Thin metal Films, J. Vac. Science Technol. A 7, 1451 (1999).
  • Ph. Avouris and R. Martel, Carbon Nanotubes: Interactions, Manipulation, Electrical Properties and Devices, in Physics and Chemistry of Nanostructured Materials (Taylor & Francis, London, 1999).
  • Ph. Avouris, H. R. Shea and R. Martel, Electrical Transport in Nanotube Rings: Coherence and Localization, in Electronic Properties of Novel Materials - Science and Technology of Molecular Nanostructures, H. Kuzmany et al., Editors (American Institute of Physcis Press, Melville, New York, 1999).
  • R. Rochefort, Ph. Avouris, and D. Salahub, Electrical and Mechanical Properties of Distorted Carbon Nanotubes, Physical Review B 60, 13824 (1999).
  • H. C. Akpati, P. Nordlander, and Ph. Avouris, A Density Functional Study of the Effects of an External Electric Field on Admolecule-Surface Systems, Surface Science  401, 47 (1998).
  • E.T. Foley, A.F. Kam, J.W. Lyding and Ph. Avouris, Cryogenic UHV-STM Study of Hydrogen and Deuterium Desorption from Si(100), Phys. Review Letters 80, 1336 (1998).
  • Ph. Avouris, R. Martel, T. Hertel and R. Sandstrom,  AFM tip induced and current induced local oxidation of silicon and metal, Applied Phys. A 66, S659 (1998).
  • T. Hertel, R. Martel and Ph. AvourisManipulation of individual carbon nanotubes and their interaction with surfaces, J. Phys. Chem. B 102, 910 (1998). 
  • T. Schmidt, R. Martel, and Ph. Avouris,  Current-induced local oxidation of metal films: Mechanism and quantum-size effects, Appl. Phys. Letters, 73, 2173 (1998). 
  • T. Hertel, R. Walkup and Ph. AvourisDeformation of carbon nanotubes by surface van der Waals forces, Phys. Review B 58, 13870 (1998).
  • N. D. Lang and Ph. Avouris, Oscillatory Conductance of Carbon-Atom Wires, Phys. Review Letters, 81, 3515 (1998).
  • R. Martel, T. Schmidt, H. R. Shea, T. Hertel, and Ph. AvourisSingle- and multi-wall carbon nanotube field-effect transistors, Appl. Phys. Letters   73, 2447 (1998).
  • Rochefort, D. Salahub, and Ph. Avouris, The Effect of Structural Distortions on the Electronic Structure of Carbon Nanotubes, Chem. Phys. Letters 297, 45 (1998).
  • Ph. Avouris, T. Hertel, R. Martel, Atomic and Nanometer Scale Modification of Materials Using Proximal Probes, Proceedings of the 40th Welch Conference on Chemical Research, Houston, TX, 1997. 
  • B. N. J. Persson and Ph. Avouris, Local Bond Breaking via STM-Induced Excitations:  The Role of Temperature, Surface Science 390, 45 (1997). 
  • T.-C. Shen and Ph. Avouris, Electron Stimulated Desorption Induced by the Scanning Tunneling Microscope, Surface Science 390, 35 (1997). 
  • Ph. Avouris, T. Hertel and R. Martel, Atomic force microscope tip induced local oxidation of silicon: kinetics, mechanism, and nanofabrication, Appl. Phys. Letters, 71, 285 (1997). 
  • Ph. Avouris, I.-W. Lyo and Y. Hasegawa, Surface state electrons:  Transport through dangling bonds on silicon, and scattering and confinement on metals, in Chemical, Structural and Electronic Analysis of Heterogeneous Surfaces on the Nanometer Scale, R. Rosei, Editor (Kluwer, Dorthrecht, Netherlands, (1997). 
  • H.C. Akpati, P. Nordlander and Ph. Avouris, The effects of an External Electric Field on the Adatom Surface Bond: H and Al on Si(111), Surface Science  372, 9 (1997). 
  • Ph. Avouris, R.E. Walkup, A.R. Rossi, T.-C. Shen, G.C. Abeln, J.R. Tucker, and J.W. Lyding, STM-Induced H Atom Desorption from Si(100): Isotope Effects and Site Selectivity, Chem. Phys. Letters  257, 148 (1997).

 

 


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