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The AFM-tip induced oxidation process is based on negatively biasing the tip with respect to the substrate under ambient conditions, which can be either a semiconductor or a metal. The substrate
locally oxidizes upon moving the tip in contact mode across the surface. The oxidant for the chemical reaction is provided by OH-
ions in the water droplet that is formed between the tip and the sample. Thus, the lateral resolution of the AFM oxidation process depends strongly on the humidity in the air. As an example, silicon dioxide lines have been written into silicon at two different humidities (see below). The lines written at 61% ambient humidity (left) are much wider than those formed at 14% (right). |
