Publications

 

2013 | 2012 | 2011 | 2010 | 2009

2013

  1. H. Pozidis, N. Papandreou, A. Sebastian, T. Mittelholzer, M.J. BrightSky, C.H. Lam, E. Eleftheriou,
    “Reliable MLC Data Storage and Retention in Phase-Change Memory after Endurance Cycling,”
    Proc. Int’l Memory Workshop, Monterey, CA (May 2013) 100-103.
    DOI
  2. J. Luckas, D. Krebs, S. Groth, J. Klomfass, R. Carius, C. Longeaud, M. Wuttig,
    “Defects in Amorphous Phase-Change Materials,”
    Journal of Materials Research 28(9) (May 2013) 1139-1147.
    DOI
  3. G. Close, U. Frey, J. Morrish, R. Jordan, S. Lewis, T. Maffitt, M. Breitwisch, C. Hagleitner, C. Lam, E. Eleftheriou,
    “A 256-Mcell Phase-Change Memory Chip Operating at 2+ bit/cell,”
    IEEE Trans. Circuits and Systems I 60(6) (June 2013) 1521-1533.
    DOI
  4. N. Papandreou, Th. Antonakopoulos, U. Egger, A. Palli, H. Pozidis and E. Eleftheriou,
    “A Versatile Platform for Characterization of Solid-State Memory Channels,”
    Proc. 2013 18th Int’l Conf. on Digital Signal Processing “DSP 2013,” (IEEE, July 2013).
    DOI
  5. D. Krebs, T. Bachmann, J.L.M. Oosthoek, V.P. Jonnalagadda, L. Dellmann, S. Raoux, J. Luckas, C. Longeaud, B.J. Kooi, R. Spolenak,
    “Changes in Electrical Transport of Amorphous Phase Change Materials upon Annealing,”
    E¥PCOS 2013, September 2013.
    PDF

2012

  1. H. Pozidis,  N. Papandreou, A. Sebastian, T. Mittelholzer, M. Brightsky, C. Lam, and E. Eleftheriou,
    “A Framework for Reliability Assessment in Multilevel Phase-Change Memory,”
    Proc. of IEEE International Memory Workshop (IMW’2012), Milan, Italy, pp 143-146, May 2012.
    DOI
  2. C. Longeaud, J. Luckas, D. Krebs, et al.,
    “On the Density of States of Germanium Telluride,”
    Journal of Applied Physics 112, 113714 (2012).
    DOI.
  3. J. L. M. Oosthoek, D. Krebs et al.,
    “The Influence of Resistance Drift on Measurements of the Activation Energy of Conduction for Phase-Change Material in Random Access Memory Line Cells,”
    Journal of Applied Physics 112, 084506 (2012).
    DOI.
  4. D. Krebs, et al.,
    “Impact of DoS Changes on Resistance Drift and Threshold Switching in Amorphous Phase Change Materials,”
    Journal of Non-Crystalline Solids 358, 2412 (2012).
    DOI.

2011

  1. N. Papandreou, H. Pozidis, A. Pantazi, A. Sebastian, M. Breitwisch, C. Lam and E. Eleftheriou,
    “Programming Algorithms for Multilevel Phase-Change Memory,”
    Proc. of IEEE International Symposium on Circuits and Systems (ISCAS’2011), Rio de Janeiro, Brazil, May 2011, pp. 329-332.
    DOI
  2. N. Papandreou, H. Pozidis, T. Mittelholzer, G. Close, M. Breitwisch, C. Lam and E. Eleftheriou,
    “Drift-tolerant Multilevel Phase-Change Memory,”
    Proc. of IEEE International Memory Workshop (IMW’2011), Monterrey, CA, May 2011, pp. 147-150.
    DOI
  3. G. Close, U. Frey, J. Morrish, R. Jordan, S. Lewis, T. Maffitt, M. Breitwisch, C. Hagleitner, C. Lam, E. Eleftheriou,
    “A 512Mb Phase-Change Memory (PCM) in 90nm CMOS achieving 2b/cell,”
    Symp. VLSI Circuits 2011, Kyoto, Japan.
    URL
  4. N. Papandreou, A. Sebastian, A. Pantazi, M. Breitwisch, C. Lam, H. Pozidis, and E. Eleftheriou,
    “Drift-Resilient Cell-State Metric for Multilevel Phase-Change Memory,”
    2011 IEEE International Electron Devices Meeting (IEDM 2011), pp. 3.5.1-3.5.4.
    DOI
  5. H. Pozidis, N. Papandreou, A. Sebastian, A. Pantazi, T. Mittelholzer, G. F. Close and E. Eleftheriou,
    “Enabling Technologies for Multilevel Phase-Change Memory,”
    European Phase Change & Ovonics Symposium (E/PCOS 2011). (invited).
    PDF
  6. A. Athmanathan and G. F. Close,
    “A 7-bit Readout Circuit in 90 nm CMOS for Drift-Resilient Multi-Level Phase-Change Memory,”
    European Phase Change & Ovonics Symposium (E/PCOS 2011). (invited).
    PDF
  7. D. Krebs,
    “Impact of DoS Changes on Resistance Drift and Threshold Switching in Amorphous Phase Change Materials,” European Phase Change & Ovonics Symposium (E/PCOS 2011).
    PDF
  8. A. Sebastian, N. Papandreou, A. Pantazi, H. Pozidis and E. Eleftheriou,
    “Non-Resistance-Based Cell-State Metric for Phase-Change Memory,”
    J. Appl. Phys. 110, 084505 (2011).
    DOI
  9. J. Luckas, S. Kremers, D. Krebs et al.,
    “The Influence of a Temperature Dependent Bandgap on the Energy Scale of Modulated Photocurrent Experiments,”
    Journal of Applied Physics 110, 013719 (2011).
    DOI.

2010

  1. N. Papandreou, A. Pantazi, A. Sebastian, E. Eleftheriou, M. Breitwisch, C. Lam and H. Pozidis,
    “Estimation of Amorphous Fraction in Multilevel Phase-Change Memory Cells,”
    Solid-State Electronics, 54(9), pp. 991-996, September 2010.
    DOI
  2. N. Papandreou, A. Pantazi, A. Sebastian, M. Breitwisch, C. Lam, H. Pozidis and E. Eleftheriou,
    “Multilevel Phase-Change Memory,”
    Proc. of IEEE International Conference on Electronics, Circuits and Systems (ICECS’2010), Special Session on Nonvolatile Memories for Storage Applications, Athens, Greece, December 2010, pp. 1025-1028.
    DOI
  3. G. Close, U. Frey, M. Breitwisch, H. Lung, C. Lam, C. Hagleitner, and E. Eleftheriou,
    “Device, Circuit and System-Level Analysis of Noise in Multi-Bit Phase-Change Memory,”
    2010 IEEE International Electron Devices Meeting (IEDM), pp. 29.5.1-29.5.4.
    DOI

2009

  1. N. Papandreou, A. Pantazi, A. Sebastian, E. Eleftheriou, M. Breitwisch, C. Lam and H. Pozidis,
    “Estimation of Amorphous Fraction in Multilevel Phase-Change Memory Cells,”
    Proc. of European Solid-State Device Research Conference (ESSDERC’2009), Athens, Greece, September 2009, pp. 209-212.
    DOI
  2. A. Pantazi, A. Sebastian, N. Papandreou, M. Breitwisch, C. Lam, H. Pozidis and E. Eleftheriou,
    “Multilevel Phase-Change Memory: Modeling and Experimental Characterization,”
    Proc. of European Phase Change and Ovonics Symposium (E\PCOS’2009), Aachen, Germany, September 2009, pp. 34-41. (invited).
    PDF
  3. D. Krebs et al.,
    “Threshold Field of Phase Change Memory Materials Measured Using Phase Change Bridge Devices”,
    Applied Physics Letters 95, 082101 (2009).
    DOI.