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Ultrathin dielectric filmsVol. 43, No. 3, 1999
Order No. G322-0217 |
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Ultrathin dielectric films are the subject of this issue and of
efforts at IBM to further improve integrated circuit packing
densities and performance through scaling. As CMOS devices
become even smaller, the thickness of the silicon dioxide gate
dielectric is at or below 2.0 nm (five or six oxide monolayers)
and is rapidly approaching a limiting value. This issue
contains eleven papers on the present and future use of gate
dielectrics and some of the efforts underway in this field.
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Papers may be viewed by clicking on the title of interest |
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Preface
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D. A. Buchanan, Guest Editor
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p. 243
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Scaling the gate dielectric: Materials, integration, and reliability
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D. A. Buchanan
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p. 245
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Growth and characterization of ultrathin nitrided silicon oxide films
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E. P. Gusev, H.-C. Lu, E. L. Garfunkel, T. Gustafsson, and M. L. Green
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p. 265
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Nitrous oxide (N2O) processing for silicon oxynitride gate dielectrics
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K. A. Ellis and R. A. Buhrman
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p. 287
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Ultrathin nitrided gate dielectrics: Plasma processing, chemical characterization, performance, and reliability
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G. Lucovsky
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p. 301
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Modeling and characterization of quantization, polysilicon depletion, and direct tunneling effects in MOSFETs with ultrathin oxides
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S.-H. Lo, D. A. Buchanan and Y. Taur
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p. 327
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Cost-effective cleaning and high-quality thin gate oxides
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M. M. Heyns, T. Bearda, I. Cornelissen, S. De Gendt, R. Degraeve, G. Groeseneken, C. Kenens, D. M. Knotter, L. M. Loewenstein, P. W. Mertens, S. Mertens, M. Meuris, T. Nigam, M. Schaekers, I. Teerlinck, W. Vandervorst, R. Vos and K. Wolke
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p. 339
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Characterization of silicon surface preparation processes for advanced gate dielectrics
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H. F. Okorn-Schmidt
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p. 351
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(Ba,Sr)TiO3 dielectrics for future stacked- capacitor DRAM
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D. E. Kotecki, J. D. Baniecki, H. Shen, R. B. Laibowitz, K. L. Saenger, J. J. Lian, T. M. Shaw, S. D. Athavale, C. Cabral, Jr., P. R. Duncombe, M. Gutsche, G. Kunkel, Y.-J. Park, Y.-Y. Wang and R. Wise
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p. 367
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Titanium dioxide (TiO2)-based gate insulators
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S. A. Campbell, H.-S. Kim, D. C. Gilmer, B. He, T. Ma and W. L. Gladfelter
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p. 383
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Nitrided gate oxides for 3.3-V logic application: Reliability and device design considerations
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T. B. Hook, J. S. Burnham and R. J. Bolam
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p. 393
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Key measurements of ultrathin gate dielectric reliability and in-line monitoring
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W. W. Abadeer, A. Bagramian, D. W. Conkle, C. W. Griffin, E. Langlois, B. F. Lloyd, R. P. Mallette, J. E. Massucco, J. M. McKenna, S. W. Mittl and P. H. Noel
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p. 407
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Recent publications IBM authors
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p. 417
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Patents
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p. 443
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