Henry H. K. Tang IBM Research Division, Thomas J. Watson Research Center, P.O. Box 218, Yorktown Heights, New York 10598 (hktangus.ibm.com). Dr. Tang is a Senior Engineer at the IBM T. J. Watson Research Center. He received his B.A. degree from Kalamazoo College in 1974 (magna cum laude, honors in physics and mathematics, Phi Beta Kappa). He received his Ph.D. degree in 1979 (theoretical physics) from Yale University, where he was a Heyl Predoctoral Fellow. He was a member of the research staff at the Massachusetts Institute of Technology, the Niels Bohr Institute at the University of Copenhagen, and the Cyclotron Institute at the Texas A&M University. In 1986, Dr. Tang joined IBM at East Fishkill to work on the company's first modeling toolset for particle-induced soft-error analysis. Other areas he has worked on include the modeling of advanced devices and NVRAM (nonvolatile RAM) technology. In 2001, he joined his present group in Yorktown Heights, New York, to focus on new radiation-related technology issues, and to develop a new generation of single-event-effect models and design tools. Dr. Tang has authored and coauthored more than 40 research papers, and he has mentored a number of experimental nuclear physics programs. In 2007, he was awarded an Invention Achievement Award and an Outstanding Technical Achievement Award.

Conal E. Murray IBM Research Division, Thomas J. Watson Research Center, P.O. Box 218, Yorktown Heights, New York 10598 (conalus.ibm.com). Dr. Murray received an Sc.B. degree in mechanical engineering from Harvard University in 1992, an M.S. degree in mechanical engineering from Boston University in 1994, and a Ph.D. degree in materials science and engineering from Northwestern University in 2000. He became an IBM Research Staff Member in 2000, focusing on the measurement and modeling of stress and texture in semiconductor features. Recently, his work has involved the development of silicide materials and the analysis of circuit design effects on soft-error rates. He holds 12 patents, has 30 publications, and has received three Research Division awards.

Giovanni Fiorenza IBM Research Division, Thomas J. Watson Research Center, P.O. Box 218, Yorktown Heights, New York 10598 (gfiorenzus.ibm.com). Dr. Fiorenza received B.S., M.S., and Ph.D. degrees in physics from Stevens Institute of Technology in 1979, 1984, and 1992, respectively. He joined IBM Component Vendor Assurance, Poughkeepsie, New York, in 1984 and worked on technology assessment, functional reliability, and soft-error evaluations of NMOS and CMOS technologies until 1988. At that time, he joined IBM East Fishkill, where he worked on the development of high-performance Bipolar/BiCMOS technologies until 1992 and on device design and development of device simulation software until 1996. He then joined the IBM T. J. Watson Research Center in Yorktown Heights, New York, where he worked on circuit and physical design for the IBM POWER4*, POWER5*, and POWER6* microprocessors. He is currently working on circuit design and physical design for high-performance microprocessors. He holds two patents and is a member of the IEEE.

Kenneth P. Rodbell IBM Research Division, Thomas J. Watson Research Center, P.O. Box 218, Yorktown Heights, New York 10598 (rodbellus.ibm.com). Dr. Rodbell is a Manager of the Thin Film Metallurgy and Soft Error Rate (SER) Research Department. He joined IBM Research as a Research Staff Member in 1989 after spending 3 years at the IBM Semiconductor Development Laboratory in East Fishkill, New York. Dr. Rodbell received his B.S. (1982), M.S. (1983), and Ph.D. (1986) degrees in materials science and engineering, with a minor in statistics, from Rensselaer Polytechnic Institute. Dr. Rodbell's research interests have focused on silicon-based electronic materials, specifically thin-film metallurgy, crystallographic texture, and electromigration. He began work on radiation-induced soft errors in semiconductor devices in 1999. He has coauthored more than 100 technical articles and has more than 50 U.S. patents. Dr. Rodbell was a recipient of the New York State 2006 Inventor of the Year Award for a Cu plating technology patent.

Michael S. Gordon IBM Research Division, Thomas J. Watson Research Center, P.O. Box 218, Yorktown Heights, New York 10598 (gordonmus.ibm.com). Dr. Gordon is a Research Staff Member at the T. J. Watson Research Center. He joined IBM in 1987 and spent 15 years working in the IBM Semiconductor Research Development Laboratory in East Fishkill, New York, in the field of electron beam lithography before joining the Research Laboratory. He received his B.S. degree in 1982 in engineering physics from the University of Colorado, Boulder, and his Ph.D. degree in 1989 in experimental nuclear physics from the State University of New York at Stony Brook. Dr. Gordon's research interests are focused on applications of accelerator-based ions including materials analysis and single-event upsets in semiconductors. He has 24 patents issued and 9 patents pending or in process, and he has 10 inventions published in the IBM Technical Disclosure Bulletin. Dr. Gordon has coauthored more than 40 technical articles. In 2007, he received an IBM Outstanding Technical Achievement Award.

David F. Heidel IBM Research Division, Thomas J. Watson Research Center, P.O. Box 218, Yorktown Heights, New York 10598 (heidelus.ibm.com). Dr. Heidel received his B.S. degree in physics from Miami University in 1974 and his M.S. and Ph.D. degrees in physics from Ohio State University in 1976 and 1980, respectively. In 1980, he joined the IBM Research Division at the T. J. Watson Research Center in Yorktown Heights, New York, working on Josephson superconducting technology. Since 1984, he has been working on the design and testing of high-speed circuits, as well as radiation-induced soft errors in memory and logic circuits.

*Trademark, service mark, or registered trademark of International Business Machines Corporation in the United States, other countries, or both.