Errata

In the paper “Silicon CMOS Devices Beyond Scaling” by W. Haensch et al. in the IBM Journal of Research and Development, Volume 50, No. 4/5, July/September 2006, the exponent 2 was omitted from the expression fCV² in the body and caption of Figure 1. The corrected figure follows.

In the paper “Continuous MOSFET Performance Increase with Device Scaling: The Role of Strain and Channel Material Innovations” by D. A. Antoniadis et al. in the IBM Journal of Research and Development, Volume 50, No. 4/5, July/September 2006, the last term of Equation (5) should be multiplied by v. The corrected equation follows.

(5)