Toshiro Hiramoto Institute of Industrial Science, University of Tokyo, 4-6-1 Komaba, Meguro-ku, Tokyo 153-8505, Japan. Dr. Hiramoto received B.S., M.S., and Ph.D degrees in electronic engineering from the University of Tokyo in 1984, 1986, and 1989, respectively. In 1989, he joined the Device Development Center, Hitachi Ltd., Ome, Japan, where he was engaged in the device and circuit design of ultra-fast BiCMOS SRAMs. In 1994, he joined the Institute of Industrial Science at the University of Tokyo, Japan, as an Associate Professor. He was also an Associate Professor in the VLSI Design and Education Center at the University of Tokyo from 1996 to 2002. Dr. Hiramoto has been a Professor in the Institute of Industrial Science at the University of Tokyo since 2002. His research interests include the low-power and low-voltage design of advanced CMOS devices, SOI MOSFETs, device/circuit cooperation schemes for low-power VLSI, quantum effects in nanoscale MOSFETs, and silicon single-electron transistors. Dr. Hiramoto is a member of the IEEE, the IEICE, and the Japan Society of Applied Physics. He has been an Elected AdCom Member of the IEEE Electron Devices Society since 2001. He served as the General Chair of the Silicon Nanoelectronics Workshop in 2003, and as Program Chair in 1997, 1999, and 2001. He also served on the Program Subcommittee on Integrated Circuits of the IEEE International Electron Devices Meeting (IEDM) in 1993 and 1994 and on the Program Subcommittee on CMOS Devices of the IEDM in 2003 and 2004. Dr. Hiramoto has served on the Program Committee of the Symposium on VLSI Technology since 2001. He was the Subcommittee Chair of CMOS Devices of the IEDM in 2005.

Masumi Saitoh Institute of Industrial Science, University of Tokyo, 4-6-1 Komaba, Meguro-ku, Tokyo 153-8505, Japan. Dr. Saitoh received the B.S., M.S., and Ph.D. degrees in electronics engineering from the University of Tokyo, Japan, in 2000, 2002, and 2005, respectively. In 2005 he joined the Toshiba Corporation, Yokohama, Japan. His research interests are in physics in silicon nanodevices and their applications.

Gen Tsutsui Institute of Industrial Science, University of Tokyo, 4-6-1 Komaba, Meguro-ku, Tokyo 153-8505, Japan. Dr. Tsutsui received the B.S. and M.S. degrees from Hiroshima University, Japan, in 1999 and 2001, respectively, and the Ph.D. degree from the University of Tokyo, Japan, in 2005. In 2006 he joined the NEC Electronics Corporation, Sagamihara, Japan. His primary research interest is in quantum effects in nanoscale MOSFETs.