Wilfried Haensch IBM Research Division, Thomas J. Watson Research Center, P.O. Box 218, Yorktown Heights, New York 10598 (whaenschus.ibm.com). In 1981, Dr. Haensch received his Ph.D. degree from the Technical University of Berlin, Germany, in the field of theoretical solid-state physics. In 1984 he joined Siemens Corporate Research in Munich to investigate high-field transport in MOSFET devices, and in 1988 he joined the DRAM development team at the Siemens Research Laboratory to investigate new cell concepts. In 1990, he joined the DRAM alliance between IBM and Siemens to develop quarter-micron 64M DRAM. In this capacity, Dr. Haensch was involved with device characterization of shallow-trench bounded devices and cell-design concerns. In 1996, he moved to a manufacturing facility to build various generations of DRAM. His primary mission was to transfer technologies from development into manufacturing and to guarantee a successful yield ramp of the product. In 2001, Dr. Haensch joined the IBM Thomas J. Watson Research Center to lead a group concerned with novel devices and applications. He is currently responsible for post-45-nm-node device design and its implications for circuit functionality.

Edward J. Nowak IBM Systems and Technology Group, 1000 River Street, Essex Junction, Vermont 05452 (ejnowakus.ibm.com). Dr. Nowak received his B.S. degree in physics in 1973 from M.I.T., and M.S. and Ph.D. degrees, also in physics, from the University of Maryland in 1975 and 1978, respectively. In 1981, following postdoctoral research at New York University, he joined IBM in Essex Junction, Vermont, to work on DRAM development. Since 1985, Dr. Nowak has worked in high-performance CMOS device design. His current interests include energy-driven device design and FinFET device architectures.

Robert H. Dennard IBM Research Division, Thomas J. Watson Research Center, P.O. Box 218, Yorktown Heights, New York 10598 (dennardus.ibm.com). Dr. Dennard is an IBM Fellow at the IBM Thomas J. Watson Research Center, where he works on extending scaling toward its fundamental limits and on energy-efficient computing. In 1954 and 1956 he received B.S. and M.S. degrees in electrical engineering from Southern Methodist University. He received the Ph.D. degree from the Carnegie Institute of Technology in 1958 and then joined the IBM Research Division. Dr. Dennard has been involved in microelectronics research and development from its early days. In 1967 he invented the one-transistor dynamic memory cell (DRAM) used in most computers today. With co-workers, he developed the concept of MOSFET scaling in 1972. Dr. Dennard is a Fellow of the IEEE and received their Edison Medal in 2001. He is a member of the National Academy of Engineering and the American Philosophical Society. His honors include the National Medal of Technology presented by President Reagan in 1988 and induction into the National Inventors Hall of Fame in 1997.

P. M. Solomon IBM Research Division, Thomas J. Watson Research Center, P.O. Box 218, Yorktown Heights, New York 10598 (solomonpus.ibm.com). Dr. Solomon studied electrical engineering as an undergraduate at the University of Cape Town, South Africa, in 1968; he received a Ph.D. degree from the Israel Institute of Technology in 1975. Since joining IBM in 1975, Dr. Solomon has been a Research Staff Member at the Thomas J. Watson Research Center, where he has worked on aspects of MOS, bipolar, and III–V device physics and device design, probing the limits of device scaling. He is a Fellow of the IEEE and the American Physical Society.

Andres Bryant IBM Systems and Technology Group, 1000 River Street, Essex Junction, Vermont 05452 (bryantaus.ibm.com). Dr. Bryant received his B.S.E.E. degree from the University of Maine in 1982 and his Ph.D. degree in electrical engineering from Stanford University in 1986, joining IBM in Burlington, Vermont, that same year. His work areas have ranged from surface-acoustic-wave gas sensors and scanning tunneling microscopy to CMOS transistor design. He has also worked on DRAM transistor design and high-performance-logic transistor design. Dr. Bryant's current interests include energy-efficient, ultralow-voltage transistor and circuit design.

Omer H. Dokumaci IBM Systems and Technology Group, 2070 Route 52, Hopewell Junction, New York 12533 (dokumacius.ibm.com). Dr. Dokumaci received his Ph.D. degree in electrical engineering from the University of Florida, joining the Process and Device Modeling Group at the IBM facility in Hopewell Junction, New York. Dr. Dokumaci's research has concentrated on modeling and simulation of dopant diffusion and activation, and advanced devices such as FinFETs, ultrathin silicon, metal-gate, back-gate, and ground-plane devices.

Arvind Kumar IBM Research Division, Thomas J. Watson Research Center, P.O. Box 218, Yorktown Heights, New York 10598 (arvkumarus.ibm.com). Dr. Kumar received the B.S., M.S., and Ph.D. degrees in electrical engineering and computer science from the Massachusetts Institute of Technology. After graduation, he pursued postdoctoral studies in mesoscopic shot noise at CEA Saclay, France. In 1996, he joined the IBM Thomas J. Watson Research Center, where his primary interests have been in semiconductor device physics, modeling, and design.

Xinlin Wang IBM Systems and Technology Group, 2070 Route 52, Hopewell Junction, New York 12533 (xinlinwus.ibm.com). Ms. Wang received her B.S. degree in electronics engineering from Tsinghua University, China, in 1998 and her M.S. degree in electrical engineering from the University of Massachusetts at Amherst in 2001. That same year she joined the Device and Process Modeling group at the IBM Semiconductor Research and Development Center in Hopewell Junction, New York. Her research interests focus on device physics, modeling, and simulation of nanoscale transistors.

Jeffrey B. Johnson IBM Systems and Technology Group, 1000 River Street, Essex Junction, Vermont 05452 (jbjus.ibm.com). Dr. Johnson received the Ph.D. degree in electrical and computer engineering in 1987 from Carnegie Mellon University. That same year he joined IBM in Essex Junction, Vermont, working in the field of technology simulation, both software development and program application. He has applied process and device simulation to many generations of IBM technology, including DRAM, SOI and bulk CMOS, and SiGe BiCMOS programs. Dr. Johnson is currently a Senior Technical Staff Member in the Technology Simulation and Predictive Modeling Department.

Massimo V. Fischetti Department of Electrical and Computer Engineering, 201D Marcus Hall, University of Massachusetts, Amherst, Massachusetts 01003 (fischettecs.umass.edu). Dr. Fischetti received the Ph.D. degree in physics from the University of California at Santa Barbara in 1978. From 1983 to 2004 he was a Research Staff Member at the IBM Thomas J. Watson Research Center in Yorktown Heights, New York, working on the theory of electron transport in semiconductors and insulators and on Monte Carlo simulation of semiconductor devices. In 2005 he joined the Department of Electrical and Computer Engineering at the University of Massachusetts, Amherst. His interests cover electronic properties of semiconductors and insulators and semiclassical and quantum transport.