Evgeni P. Gusev QUALCOMM MEMS Technologies, 2581 Junction Avenue, San Jose, California 95134. Dr. Gusev received his M.S. (applied physics/molecular physics) and Ph.D. (solid-state physics) degrees from the Moscow Engineering Physics Institute (MEPhI) in 1988 and 1991. After graduation, he worked at MEPhI as a Research Associate for two years. In 1993, he joined the Laboratory for Surface Modification at Rutgers University, where he performed research on fundamental aspects of gate dielectrics, first as a Postdoctoral Fellow and then as a Research Assistant Professor. In 1997, he held an appointment as Visiting Professor at the Research Center for Nanodevices and Systems, Hiroshima University, Japan. Dr. Gusev subsequently joined IBM, where he was responsible for several projects related to gate stack processing, characterization, and device integration at both the Semiconductor Research and Development Center (SRDC) in East Fishkill, New York, and the Thomas J. Watson Research Center in Yorktown Heights, New York. In 2005 he joined the QUALCOMM Technology Development Center in San Jose as the Director of the Department of Materials and Device Research and Development. Dr. Gusev has also contributed to the technical R&D community, with nine edited books, more than 140 publications, and 20 issued and filed patents. He is a member of several professional committees, panels, and societies.

Vijay Narayanan IBM Research Division, Thomas J. Watson Research Center, P.O. Box 218, Yorktown Heights, New York 10598 (vijaynaus.ibm.com). Dr. Narayanan is a Research Staff Member in the Silicon Technology Department at the IBM Thomas J. Watson Research Center. He received his B.Tech. degree in metallurgical engineering from the Indian Institute of Technology, Madras (1995), and his M.S. (1996) and Ph.D. (1999) degrees in materials science and engineering from Carnegie Mellon University, where his dissertation concentrated on understanding the origins of line and planar defects during the epitaxial growth of gallium phosphide on different orientations of Si. In 1999, Dr. Narayanan joined the Department of Chemical and Materials Engineering at Arizona State University as a postdoctoral research associate, with a focus on the initial stages of nucleation and growth of III–V nitrides on sapphire and Si substrates grown by MOCVD. Dr. Narayanan joined IBM in 2001. His current research concerns advanced gate stack technologies including, high-κ–metal gate devices for the 45-nm-technology node and beyond. He is an author or co-author of more than 30 peer-reviewed journal and conference papers, and he holds six U.S. patents.

Martin M. Frank IBM Research Division, Thomas J. Watson Research Center, P.O. Box 218, Yorktown Heights, New York 10598 (mmfrankus.ibm.com). Dr. Frank is a Research Staff Member in the Silicon Technology Department at the Thomas J. Watson Research Center. He received a Diplom degree in physics from Ruhr-Universität Bochum, Germany, in 1996. He then performed graduate research on oxide-supported metal nanoparticles at Fritz-Haber-Institut der Max-Planck-Gesellschaft in Berlin, Germany, as a scholar of the German National Merit Foundation, and received a Ph.D. degree in physics from Humboldt-Universität zu Berlin in 2000. During a subsequent postdoctoral appointment at Rutgers University, in collaboration with Agere Systems at Lucent Technologies' Bell Laboratories, he studied dielectric and semiconductor growth on silicon and compound semiconductor surfaces, and metal electrode deposition onto self-assembled monolayers. Dr. Frank joined IBM in 2003. His current research concentrates on high-κ gate stacks on silicon and on high-carrier-mobility materials. During an assignment to the Interuniversity MicroElectronics Center (IMEC) in Leuven, Belgium, he also commenced studies of photoresist chemistry. Dr. Frank is an author or coauthor of more than 40 papers and one patent. In 2000, he received the Otto Hahn Medal for outstanding scientific achievements.