Dimitri A. Antoniadis Department of Electrical Engineering and Computer Science, Massachusetts Institute of Technology, Cambridge, Massachusetts 02139 (daamtl.mit.edu). Dr. Antoniadis is the Ray and Maria Stata Professor of Electrical Engineering at MIT. He is Director of the multi-university Focus Research Center for Materials Structures and Devices, an IEEE Fellow, and the recipient of several professional awards. Dr. Antoniadis is an author or coauthor of more than 200 technical papers; he currently works on extreme-submicron Si, SOI, and Si/SiGe MOSFETs.

Ingvar Aberg Department of Electrical Engineering and Computer Science, Massachusetts Institute of Technology, Cambridge, Massachusetts 02139 (iabergmit.edu). Mr. Aberg is a Ph.D. student in electrical engineering and computer science at MIT. He received an M.S. degree in engineering physics in 2001 from Lund University, Sweden. Mr. Aberg's research topic is transport in strained Si and strained SiGe heterostructure MOSFETs, in particular for ultrathin-body on-insulator applications.

Cáit Ní Chléirigh Department of Electrical Engineering and Computer Science, Massachusetts Institute of Technology, Cambridge, Massachusetts 02139 (caitmit.edu). Ms. Ní Chléirigh is a Ph.D. student in electrical engineering and computer science at MIT. She received an M.Eng. degree in microelectronics in 2000 from University College, Cork, Ireland. Her research topic is strained-Si and strained-SiGe heterostructure MOSFETs.

Osama M. Nayfeh Department of Electrical Engineering and Computer Science, Massachusetts Institute of Technology, Cambridge, Massachusetts 02139 (onayfehmtl.mit.edu). Mr. Nayfeh is a Ph.D. student in electrical engineering and computer science at MIT, where he received an M.S. degree in electrical engineering in 2004. His current research topics include Monte Carlo simulation of submicrometer electron devices, modeling of advanced transistors with novel high-mobility channel materials, and the fabrication of silicon nanoparticle/nanowire-based electronic and opto-electronic devices.

Ali Khakifirooz Microsystems Technology Laboratories, Massachusetts Institute of Technology, Cambridge, Massachusetts 02139 (khakimit.edu). Mr. Khakifirooz received B.S. and M.S. degrees in electrical engineering from the University of Tehran in 1997 and 1999, respectively. He is currently a Ph.D. candidate at MIT exploring carrier transport in decananometer MOSFETs and process integration issues for germanium-channel devices. He has authored or co-authored approximately 40 peer-reviewed papers. Mr. Khakifirooz is a member of the IEEE, MRS, and AVS.

Judy L. Hoyt Department of Electrical Engineering and Computer Science, Massachusetts Institute of Technology, Cambridge, Massachusetts 02139 (jlhoytmtl.mit.edu). Dr. Hoyt received her Ph.D. degree from Stanford University in 1988. She is a Professor of Electrical Engineering at MIT. Among other research projects, she participates in the MIT-led MARCO Focus Research Center on Materials, Structures, and Devices. Dr. Hoyt chaired the IEEE International Electron Devices Meeting in 2001. She is an author or coauthor of more than 100 technical papers, and her current research interests include Si-based heterostructures for bulk and on-insulator MOSFETs.