IBM®
Skip to main content
    Country/region [change]    Terms of use
 
 
 
    Home    Products    Services & solutions    Support & downloads    My account    

IBM Journal of Research and Development

Spintronics   Volume 50, Number 1, 2006
Table of contents: HTMLPDF This article: HTMLPDF   Copyright info

Spintronics—A retrospective and perspective - References

by S. A. Wolf,
A. Y. Chtchelkanova,
and D. M. Treger
References and note

  1. A. V. Pohm, C. S. Comstock, J. Y. Yoo, and J. H. Hur, “Threshold Properties of 1, 2, and 4 mm Multilayer Magneto-Resistive Memory Cells,” IEEE Trans. Magn. 23, No. 5, 2575–2577 (1987).
  2. J. M. Daughton, “Magnetic Thin Film RAM Devices,” Lecture Notes in Physics, 337 (Warren E. Henry Symposium on Magnetism), Springer-Verlag, New York, 1988, pp. 9101–9116.
  3. A. V. Pohm, J. S. T. Huang, J. M. Daughton, D. R. Krahn, and V. Mehra, “The Design of a One Megabit Nonvolatile M-R Memory Chip Using 1.5×1.5 mm Cells,” IEEE Trans. Magn. 24, No. 6, 3117–3119 (1988).
  4. M. Baibich, J. Broto, A. Fert, F. v. Dau, F. Petroff, P. Etienne, G. Greuzet, A. Friederich, and J. Chazelas, “Giant Magnetoresistance of (001)Fe/(001)Cr Magnetic Superlattices,” Phys. Rev. Lett. 61, 2472 (1988).
  5. G. Binash, P. Grunberg, F. Saurenbach, and W. Zinn, “Enhanced Magnetoresistance in Layered Magnetic Structures with Antiferromagnetic Interlayer Exchange,” Phys. Rev. B 39, 4828 (1989).
  6. S. S. P. Parkin, N. More, and K. P. Roche, “Oscillations in Exchange Coupling and Magnetoresistance in Metallic Superlattice Structures: Co/Ru, Co/Cr, and Fe/Cr,” Phys. Rev. Lett. 64, 2304 (1990).
  7. S. S. P. Parkin, Z. G. Li, and D. J. Smith, “Giant Magnetoresistance in Antiferromagnetic Co/Cu Multilayers,” Appl. Phys. Lett. 58, 2710 (1991); S. S. P. Parkin, R. Bhadra, and K. P. Roche, “Oscillatory Magnetic Exchange Coupling Through Thin Copper Layers,” Phys. Rev. Lett. 66, 2152 (1991).
  8. S. S. P. Parkin, “Systematic Variation of the Strength and Oscillation Period of Indirect Magnetic Exchange Coupling Through the 3d, 4d, and 5d Transition Metals,” Phys. Rev. Lett. 67, 3598 (1991).
  9. S. S. P. Parkin, “Dramatic Enhancement of Interlayer Exchange Coupling and Giant Magnetoresistance in Ni81Fw19/Cu by Addition of Thin Co Interface Layers,” Appl. Phys. Lett. 61, 1358 (1992); S. S. P. Parkin, “Origin of Enhanced Magnetoresistance of Magnetic Multilayers: Spin-Dependent Scattering from Magnetic Interface States,” Phys. Rev. Lett. 71, 1641 (1993).
  10. B. Dieny, V. S. Speriosu, S. S. P. Parkin, and B. A. Gurney, “Giant Magnetoresistance in Soft Ferromagnetic Multilayers,” Phys. Rev. B 43, 1297 (1991).
  11. J. Daughton, “Spin-Dependent Sensors,” Proc. IEEE 91, 681 2003).
  12. S. S. P. Parkin, X. Jiang, C. Kaiser, A. Panchula, K. Roche, and M. Samant, “Magnetically Engineered Spintronic Sensors and Memory,” Proc. IEEE 91, 661 (2003).
  13. S. Wolf and D. Treger, “Spintronics: A New Paradigm for Electronics for the New Millennium,” IEEE Trans. Magn. 36, 2748 (2000).
  14. J. C. Slonczewski, “Conductance and Exchange Coupling of Two Ferromagnets Separated by a Tunnel Barrier,” Phys. Rev. B 39, 6995 (1989). For more on the origins of the magnetic tunnel junction, see also W. J. Gallagher and S. S. P. Parkin, “Development of the Magnetic Tunnel Junction MRAM at IBM: From First Junctions to a 16-Mb MRAM Demonstrator Chip,” IBM J. Res. & Dev. 50, No. 1, 5–23 (2006, this issue).
  15. J. S. Moodera, L. R. Kinder, T. M. Wong, and R. Meservey, “Large Magnetoresistance at Room Temperature in Ferromagnetic Thin Film Tunnel Junctions,” Phys. Rev. Lett. 74, 3273 (1995).
  16. T. Miyazaki and N. Tezuka, “Giant Magnetic Tunneling Effect in Fe/Al2O3/Fe Junction,” J. Magn. Magn. Mater. 139, L21 (1995).
  17. M. Durlam, D. Addie, J. Akerman, B. Butcher, P. Brown, J. Chan, M. DeHerrera, B. N. Engel, B. Feil, G. Grynkewich, J. Janesky, M. Johnson, K. Kyler, J. Molla, J. Martin, K. Nagel, J. Ren, N. D. Rizzo, T. Rodriguez, L. Savtchenko, J. Salter, J. M. Slaughter, K. Smith, J. J. Sun, M. Lien, K. Papworth, P. Shah, W. Qin, R. Williams, L. Wise, and S. Tehrani, “A 0.18 μm 4Mb Toggling MRAM,” IEDM Tech. Digest, 2003, pp. 34.6.1–34.6.3.
  18. HDD Technology Overview Charts, Hitachi Global Storage Technologies, see http://www.hitachigst.com/hdd/technolo/overview/chart02.html.
  19. Proc. IEEE 91, No. 5, May 2003; special issue on spintronics technology.
  20. B. N. Engel, J. Åkerman, B. Butcher, R. W. Dave, M. DeHerrera, M. Durlam, G. Grynkewich, J. Janesky, S. V. Pietambaram, N. D. Rizzo, J. M. Slaughter, K. Smith, J. J. Sun, and S. Tehrani, “A 4-Mbit Toggle MRAM Based on a Novel Bit and Switching Method,” IEEE Trans. Magn. 41, 132–136 (2005).
  21. J. DeBrosse, C. Arndt, C. Barwin, A. Bette, D. Gogl, E. Gow, H. Hoenigschmid, S. Lammers, M. Lamorey, Y. Lu, T. Maffitt, K. Maloney, W. Obermeyer, A. Sturm, H. Viehmann, D. Willmott, M. Wood, W. J. Gallagher, G. Mueller, and A. R. Sitaram, “A 16Mb MRAM Featuring Bootstrapped Write Drivers,” Digest of Technical Papers, Symposium on VLSI Circuits (IEEE Cat. No. 04CH37525), 2004, pp. 454–457.
  22. R. Scheuerlein, W. Gallagher, S. Parkin, A. Lee, S. Ray, R. Robertazzi, and W. Reohr, “A 10 ns Read and Write Non-Volatile Memory Array Using a Magnetic Tunnel Junction and FET Switch in Each Cell,” Digest of Technical Papers, IEEE International Solid-State Circuits Conference (IEEE Cat. No. 00CH37056), 2000, pp. 128–129.
  23. P. K. Naji, M. Durlam, S. Tehrani, J. Calder, and M. F. DeHerrera, “A 256 Kb 3.0 V 1T1MTJ Nonvolatile Magnetoresistive RAM,” Digest of Technical Papers, IEEE International Solid-State Circuits Conference (IEEE Cat. No. 01CH37177), 2001, pp. 122–438.
  24. M. Durlam, P. Naji, A. Omair, M. DeHerrera, J. Calder, J. M. Slaughter, B. Engel, N. Rizzo, G. Grynkewich, B. Butcher, C. Tracy, K. Smith, K. Kyler, J. Ren, J. Molla, B. Feil, R. Williams, and S. Tehrani, “A Low Power 1 Mbit MRAM Based on 1T1MTJ Bit Cell Integrated with Copper Interconnects,” Digest of Technical Papers, Symposium on VLSI Circuits (IEEE Cat. No. 02CH37302), 2002, pp. 158–161.
  25. F. Matsukura, H. Ohno, A. Shen, and Y. Sugawara, “Electrical Spin Injection in a Ferromagnetic Semiconductor Heterostructure,” Phys. Rev. B 57, R2037 (1998).
  26. J. M. Kikkawa and D. D. Awschalom, “Resonant Spin Amplification in GaAs,” Phys. Rev. Lett. 80, 4313 (1998).
  27. J. A. Katine, F. J. Albert, R. A. Buhrman, E. B. Myers, and D. C. Ralph, “Current-Driven Magnetization Reversal and Spin-Wave Excitations in Co/Cu/Co Pillars,” Phys. Rev. Lett. 84, 3149 (2000).
  28. B. T. Jonker, “Reduction of Spin Injection Efficiency by Interface Spin Scattering,” U.S. Patent 5,874,749, 1999.
  29. R. Fiederling, M. Kleim, G. Reuscher, W. Ossau, G. Schmidt, A. Waag, and L. W. Molenkamp, “Injection and Detection of a Spin-Polarized Current in a Light-Emitting Diode,” Nature 402, 787 (1999).
  30. B. T. Jonker, Y. D. Park, B. R. Bennett, H. D. Cheong, G. Kioseoglou, and A. Petrou, “Robust Electrical Spin Injection into Semiconductor Heterostructures,” Phys. Rev. B 62, 8180 (2000).
  31. Y. Ohno, D. K. Young, B. Beschoten, F. Matsukura, H. Ohno, and D. D. Awschalom, “Electrical Spin Injection in a Ferromagnetic Semiconductor Heterostructure,” Nature 402, 790–792 (1999).
  32. S. van Dijken, X. Jiang, and S. S. P. Parkin, “Room Temperature Operation of a High Output Magnetic Tunnel Transistor,” Appl. Phys. Lett. 80, 3364 (2002).
  33. S. van Dijken, X. Jiang, and S. S. P. Parkin, “Giant Magnetocurrent Exceeding 3400% in Magnetic Tunnel Transistors with Spin-Value Base Layers,” Appl. Phys. Lett. 83, 951 (2003).
  34. X. Jiang, R. Wang, S. van Dijken, R. Shelby, R. Macfarlane, G. Solomon, J. Harris, and S. S. P. Parkin, “Optical Detection of Hot-Electron Spin Injection into GaAs from a Magnetic Tunnel Transistor Source,” Phys. Rev. Lett. 90, 256603 (2003).
  35. X. Cartoixà, D. Z.-Y. Ting, and Y.-C. Chang, “A Resonant Spin Lifetime Transistor,” Appl. Phys. Lett. 83, 1462 (2003).
  36. S. Datta and B. Das, “Electronic Analog of the Electro-Optic Modulator,” Appl. Phys. Lett. 56, 665 (1990).
  37. E. J. Gansen, K. Jarasiunas, and A. L. Smirl, “Femtosecond All-Optical Polarization Switching Based on the Virtual Excitation of Spin-Polarized Electrons in Quantum Wells,” Appl. Phys. Lett. 80, 971 (2002); E. J. Gansen and A. L. Smirl, “Ultrafast Polarization Modulation Induced by the ‘Virtual Excitation' of Spin-Polarized Excitons in Quantum Wells: Application to All-Optical Switching,” J. Appl. Phys. 95, 3907 (2004).
  38. I. Rumyantsev, N. H. Kwong, R. Binder, E. J. Gansen, and A. L. Smirl, “chi(3) Analysis of All-Optical Polarization Switching in Semiconductor Quantum Wells,” Phys. Rev. B 69, 235329 (2004).
  39. F. Matsukura, H. Ohno, A. Shen, and Y. Sugawara, “Transport Properties and Origin of Ferromagnetism in (Ga,Mn)As,” Phys. Rev. B 57, R2037 (1998).
  40. A. M. Nazmul, T. Amemiya, Y. Shuto, S. Sugahara, and M. Tanaka, “High Temperature Ferromagnetism in GaAs-Based Heterostructures with Mn Delta Doping”; see http://arxiv.org/cond-mat/0503444 (2005).
  41. F. Matsukura, E. Abe, and H. Ohno, “Magnetotransport Properties of (Ga, Mn)Sb,” J. Appl. Phys. 87, 6442 (2000).
  42. X. Chen, M. Na, M. Cheon, S. Wang, H. Luo, B. D. McCombe, X. Liu, Y. Sasaki, T. Wojtowicz, J. K. Furdyna, S. J. Potashnik, and P. Schiffer, “Above-Room-Temperature Ferromagnetism in GaSb/Mn Digital Alloys,” Appl. Phys. Lett. 81, 511 (2002).
  43. Y. D. Park, A. T. Hanbicki, S. C. Erwin, C. S. Hellberg, J. M. Sullivan, J. E. Mattson, T. F. Ambrose, A. Wilson, G. Spanos, and B. T. Jonker, “A Group-IV Ferromagnetic Semiconductor: MnxGe1−x,” Science 295, 651 (2002).
  44. Y. Matsumoto, M. Murakami, T. Shono, T. Hasegawa, T. Fukumura, M. Kawasaki, P. Ahmet, T. Chikyow, S. Koshihara, and H. Koinuma, “Room-Temperature Ferromagnetism in Transport Transition Metal-Doped Titanium Dioxide,” Science 291, 854 (2001).
  45. M. L. Reed, N. A. El-Masry, H. H. Stadelmaier, M. E. Ritums, N. J. Reed, C. A. Parker, J. C. Roberts, and S. M. Bedair, “Room Temperature Ferromagnetic Properties of (Ga, Mn)N,” Appl. Phys. Lett. 79, 3473 (2001).
  46. S. Cho, S. Choi, G.-B. Cha, S. Hong, Y. Kim, Y.-J. Zhao, A. J. Freeman, J. B. Ketterson, B. Kim, Y. Kim, and B.-C. Choi, “Room-Temperature Ferromagnetism in (Zn1−xMnx)GeP2 Semiconductors,” Phys. Rev. Lett. 88, 257203 (2002).
  47. S. B. Ogale, R. J. Choudhary, J. P. Buban, S. E. Lofland, S. R. Shinde, S. N. Kale, V. N. Kulkarni, J. Higgins, C. Lanci, J. R. Simpson, N. D. Browning, S. Das Sarma, H. D. Drew, R. L. Greene, and T. Venkatesan, “High Temperature Ferromagnetism with a Giant Magnetic Moment in Transparent Co-Doped SnO2−δ,” Phys. Rev. Lett. 91, 077205 (2003).
  48. Y. G. Zhao, S. R. Shinde, S. B. Ogale, J. Higgins, R. Choudhary, V. N. Kulkarni, R. L. Greene, T. Venkatesan, S. E. Lofland, C. Lanci, J. P. Buban, N. D. Browning, S. Das Sarma, and A. J. Millis, “Co-Doped La0.5Sr0.5TiO3−δ: Diluted Magnetic Oxide System with High Curie Temperature,” Appl. Phys. Lett. 83, 2199–2201 (2003).
  49. H. Saito, V. Zayets, S. Yamagata, and K. Ando, “Room-Temperature Ferromagnetism in a II–VI Diluted Magnetic Semiconductor Zn1−xCrxTe,” Phys. Rev. Lett. 90, 207202 (2003).
  50. P. Sharma, A. Gupta, K. V. Rao, F. J. Owens, R. Sharma, R. Ahuja, J. M. Osorio Guillen, B. Johansson, and G. A. Gehring, “Ferromagnetism Above Room Temperature in Bulk and Transparent Thin Films of Mn-Doped ZnO,” Nature Mater. 2, 673 (2003).
  51. J. Philip, N. Theodoropoulou, G. Berera, J. S. Moodera, and B. Satpati, “High-Temperature Ferromagnetism in Manganese-Doped Indium–Tin Oxide Films,” Appl. Phys. Lett. 85, 777 (2004).
  52. H. X. Liu, S. Y. Wu, R. K. Singh, L. Gu, D. J. Smith, N. R. Dilley, L. Montes, M. B. Simmonds, and N. Newman, “Observation of Ferromagnetism at over 900 K in Cr-doped GaN and AlN,” Appl. Phys. Lett. 85, 4076 (2004).
  53. S. Y. Wu, H. X. Liu, L. Gu, R. K. Singh, M. van Schilfgaarde, D. J. Smith, N. R. Dilley, L. Montes, M. B. Simmonds, and N. Newman, “Synthesis and Characterization of High Quality Ferromagnetic Cr-Doped GaN and AlN Thin Films with Curie Temperatures Above 900 K” (2003 Fall Materials Research Society Symposium Proceedings), Mater. Sci. Forum 798, B10.57.1 (2004).
  54. T. C. Kreutz, E. G. Gwinn, R. Artzi, R. Naaman, H. Pizem, and C. N. Sukenik, “Modification of Ferromagnetism in Semiconductors by Molecular Monolayers,” Appl. Phys. Lett. 83, 4211 (2003).
  55. M. Ouyang and D. Awschalom, “Coherent Spin Transfer Between Molecularly Bridged Quantum Dots,” Science 301, 1074–1078 (2003).
  56. J. C. Slonczewski, “Current-Driven Excitation of Magnetic Multilayers,” J. Magn. Magn. Mater. 159, L1 (1996).
  57. L. Berger, “Emission of Spin Waves by a Magnetic Multilayer Traversed by a Current,” Phys. Rev. B 54, 9353 (1996).
  58. T. W. Andre, J. J. Nahas, C. K. Subramanian, B. J. Garni, H. S. Lin, A. Omair, and W. L. Martino, Jr., “A 4-Mb 0.18-μm 1T1MTJ Toggle MRAM with Balanced Three Input Sensing Scheme and Locally Mirrored Unidirectional Write Drivers,” IEEE J. Solid-State Circuits 40, No. 1, 301–309 (2005).
  59. S. Tehrani, J. M. Slaughter, M. DeHerrera, B. N. Engel, N. D. Rizzo, J. Salter, M. Durlam, R. W. Dave, J. Janesky, B. Butcher, K. Smith, and G. Grynkewich, “Magnetoresistive Random Access Memory Using Magnetic Tunnel Junctions,” Proc. IEEE 91, No. 5, 703–714 (2003).
  60. S. S. P. Parkin, C. Kaiser, A. Panchula, P. Rice, B. Hughes, M. Samant, and S.-H. Yang, “Giant Tunneling Magnetoresistance at Room Temperature with MgO(100) Tunnel Barriers,” Nature Mater. 3, 862–867 (2004).
  61. S. Yuasa, T. Nagahama, A. Fukushima, Y. Suzuki, and K. Ando, “Giant Room-Temperature Magnetoresistance in Single-Crystal Fe/MgO/Fe Magnetic Tunnel Junctions,” Nature Mater. 3, 868–871 (2004).
  62. W. J. Gallagher, D. D. Abraham, S. Assefa, S. L. Brown, J. DeBrosse, M. Gaidis, E. Galligan, E. Gow, B. Hughes, J. Hummel, S. Kanakasabapathy, C. Kaiser, M. Lamorey, T. Maffitt, K. Milkove, Y. Lu, J. Nowak, P. Rice, M. Samant, E. O'Sullivan, S. S. P. Parkin, R. Robertazzi, P. Trouilloud, D. Worledge, G. Wright, and S.-H. Yang, “Recent Advances in MRAM Technology,” Proceedings of the IEEE International Symposium on VLSI Technology (VLSI TSA TECH), 2005, pp. 72–73.
  63. S. S. Parkin, “Shiftable Magnetic Shift Register and Method of Using the Same,” U.S. Patent 6,834,005, 2004; “System and Method for Writing to a Magnetic Shift Register,” U.S. Patent 6,898,132, 2005.
  64. W. H. Rippard, M. R. Pufall, S. Kaka, S. E. Russek, and T. J. Silva, “Direct-Current Induced Dynamics in Co90Fe10/Ni80Fe20 Point Contacts,” Phys. Rev. Lett. 92, 027201 (2004).


    About IBMPrivacyContact