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Spintronics (spin-based electronics) pertains to microelectronic devices that rely on electron spin rather than charge for memory and logic applications. This issue focuses on MRAM (magnetic random access memory), offering the potential for nonvolatile, on-chip storage—and on spin-based phenomena in semiconductors, offering the potential for devices that would function at exceptionally low power.
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Spintronics
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Preface
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W. J. Gallagher and S. S. P. Parkin, Guest Editors
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p. 3
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Development of the magnetic tunnel junction MRAM at IBM: From first junctions to a 16-Mb MRAM demonstrator chip
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W. J. Gallagher and S. S. P. Parkin
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p. 5
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Design considerations for MRAM
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T. M. Maffitt, J. K. DeBrosse, J. A. Gabric, E. T. Gow, M. C. Lamorey, J. S. Parenteau, D. R. Willmott, M. A. Wood, and W. J. Gallagher
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p. 25
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Two-level BEOL processing for rapid iteration in MRAM development
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M. C. Gaidis, E. J. O’Sullivan, J. J. Nowak, Y. Lu, S. Kanakasabapathy, P. L. Trouilloud, D. C. Worledge, S. Assefa, K. R. Milkove, G. P. Wright, and W. J. Gallagher
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p. 41
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Rapid-turnaround characterization methods for MRAM development
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D. W. Abraham, P. L. Trouilloud, and D. C. Worledge
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p. 55
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Single-domain model for toggle MRAM
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D. C. Worledge
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p. 69
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Spin angular momentum transfer in current-perpendicular nanomagnetic junctions
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J. Z. Sun
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p. 81
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Spintronics—A retrospective and perspective
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S. A. Wolf, A. Y. Chtchelkanova, and D. M. Treger
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p. 101
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Highly efficient room-temperature tunnel spin injector using CoFe/MgO(001)
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X. Jiang, R. Wang, R. M. Shelby, and S. S. P. Parkin
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p. 111
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Bipolar spintronics: Fundamentals and applications
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I. Žutić, J. Fabian, and S. C. Erwin
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p. 121
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Toward dissipationless spin transport in semiconductors
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B. A. Bernevig and S. Zhang
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p. 141
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Regular paper
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An approximation to the greedy algorithm for differential compression
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R. C. Agarwal, K. Gupta, S. Jain, and S. Amalapurapu
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p. 149
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