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IBM Journal of Research and Development

Spintronics   Volume 50, Number 1, 2006
Table of contents: HTMLPDF This article: HTMLPDF   Copyright info

Highly efficient room-temperature tunnel spin injector using CoFe/MgO(001) - References

by X. Jiang,
R. Wang,
R. M. Shelby,
and S. S. P. Parkin
References

  1. J. M. Kikkawa and D. D. Awschalom, “Resonant Spin Amplification in n-Type GaAs,” Phys. Rev. Lett. 80, 4313 (1998).
  2. J. M. Kikkawa and D. D. Awschalom, “Lateral Drag of Spin Coherence in Gallium Arsenide,” Nature (Lond.) 397, 139 (1999).
  3. H. Ohno, D. Chiba, F. Matsukura, T. Omiya, E. Abe, T. Dietl, Y. Ohno, and K. Ohtani, “Electric-Field Control of Ferromagnetism,” Nature 408, 944 (2000).
  4. J. S. Sandhu, A. P. Heberle, J. J. Baumberg, and J. R. A. Cleaver, “Gateable Suppression of Spin Relaxation in Semiconductors,” Phys. Rev. Lett. 86, 2150 (2001).
  5. O. Z. Karimov, G. H. John, R. T. Harley, W. H. Lau, M. E. Flatté, M. Henini, and R. Airey, “High Temperature Gate Control of Quantum Well Spin Memory,” Phys. Rev. Lett. 91, 246601 (2003).
  6. S. Murakami, N. Nagaosa, and S.-C. Zhang, “Dissipationless Quantum Spin Current at Room Temperature,” Science 301, 1348 (2003).
  7. I. Zutic, J. Fabian, and S. Das Sarma, “Spintronics: Fundamentals and Applications,” Rev. Mod. Phys. 76, 323 (2004).
  8. S. A. Wolf, D. D. Awschalom, R. A. Buhrman, J. M. Daughton, S. von Molnár, M. L. Roukes, A. Y. Chtchelkanova, and D. M. Treger, “Spintronics: A Spin-Based Electronics Vision for the Future,” Science 294, 1488 (2001).
  9. F. Meier and B. P. Zakharchenya, Optical Orientation, Vol. 8, North Holland, Amsterdam, Netherlands, 1984.
  10. F. G. Monzon and M. L. Roukes, “Spin Injection and the Local Hall Effect in InAs Quantum Wells,” J. Magn. Magn. Mater. 198, 632 (1999).
  11. S. Gardelis, C. G. Smith, C. H. W. Barnes, E. H. Linfield, and D. A. Ritchie, “Spin-Valve Effects in a Semiconductor Field-Effect Transistor: A Spintronic Device,” Phys. Rev. B 60, 7764 (1999).
  12. A. T. Filip, B. H. Hoving, F. J. Jedema, B. J. van Wees, B. Dutta, and S. Borghs, “Experimental Search for the Electrical Spin Injection in a Semiconductor,” Phys. Rev. B 62, 9996 (2000).
  13. G. Schmidt, D. Ferrand, L. W. Molenkamp, A. T. Filip, and B. J. van Wees, “Fundamental Obstacle for Electrical Spin Injection from a Ferromagnetic Metal into a Diffusive Semiconductor,” Phys. Rev. B 62, R4790 (2000).
  14. R. Fiederling, M. Keim, G. Reuscher, W. Ossau, G. Schmidt, A. Waag, and L. W. Molenkamp, “Injection and Detection of a Spin-Polarized Current in a Light-Emitting Diode,” Nature 402, 787 (1999).
  15. Y. Ohno, D. K. Young, B. Beschoten, F. Matsukura, H. Ohno, and D. D. Awschalom, “Electrical Spin Injection in a Ferromagnetic Semiconductor Heterostructure,” Nature 402, 790 (1999).
  16. B. T. Jonker, Y. D. Park, B. R. Bennett, H. D. Cheong, G. Kioseoglou, and A. Petrou, “Robust Electrical Spin Injection into a Semiconductor Heterostructure,” Phys. Rev. B 62, 8180 (2000).
  17. B. T. Jonker, A. T. Hanbicki, Y. D. Park, G. Itskos, M. Furis, G. Kioseoglou, A. Petrou, and X. Wei, “Quantifying Electrical Spin Injection: Component-Resolved Electroluminescence from Spin-Polarized Light-Emitting Diodes,” Appl. Phys. Lett. 79, 3098 (2001).
  18. E. I. Rashba, “Theory of Electrical Spin Injection: Tunnel Contacts as a Solution of the Conductivity Mismatch Problem,” Phys. Rev. B 62, R16267 (2000).
  19. P. R. Hammar, B. R. Bennett, M. J. Yang, and M. Johnson, “Observation of Spin Injection at a Ferromagnet–Semiconductor Interface,” Phys. Rev. Lett. 83, 203 (1999).
  20. H. J. Zhu, M. Ramsteiner, H. Kostial, M. Wassermeier, H.-P. Schönherr, and K. H. Ploog, “Room-Temperature Spin Injection from Fe into GaAs,” Phys. Rev. Lett. 87, 016601 (2001).
  21. A. T. Hanbicki, B. T. Jonker, G. Itskos, G. Kioseoglou, and A. Petrou, “Efficient Electrical Spin Injection from a Magnetic Metal/Tunnel Barrier Contact into a Semiconductor,” Appl. Phys. Lett. 80, 1240 (2002).
  22. A. T. Hanbicki, O. M. J. van't Erve, R. Magno, G. Kioseoglou, C. H. Li, B. T. Jonker, G. Itskos, R. Mallory, M. Yasar, and A. Petrou, “Analysis of the Transport Process Providing Spin Injection Through an Fe/AlGaAs Schottky Barrier,” Appl. Phys. Lett. 82, 4092 (2003).
  23. C. Adelmann, X. Lou, J. Strand, C. J. Palmstrøm, and P. A. Crowell, “Spin Injection and Relaxation in Ferromagnet–Semiconductor Heterostructures,” Phys. Rev. B 71, R121301 (2005).
  24. T. Manago and H. Akinaga, “Spin-Polarized Light Emitting Diode Using Metal/Insulator/Semiconductor Structures,” Appl. Phys. Lett. 81, 694 (2002).
  25. O. M. J. van't Erve, G. Kioseoglou, A. T. Hanbicki, C. H. Li, B. T. Jonker, R. Mallory, M. Yasar, and A. Petrou, “Comparison of Fe/Schottky and Fe/Al2O3 Tunnel Barrier Contacts for Electrical Spin Injection into GaAs,” Appl. Phys. Lett. 84, 4334 (2004).
  26. V. F. Motsnyi, J. D. Boeck, J. Das, W. Van Roy, G. Borghs, E. Goovaerts, and V. I. Safarov, “Electrical Spin Injection in a Ferromagnetic/Tunnel Barrier/Semiconductor Heterostructure,” Appl. Phys. Lett. 81, 265 (2002).
  27. V. F. Motsnyi, P. V. Dorpe, W. V. Roy, E. Goovaerts, V. I. Safarov, G. Borghs, and J. D. Boeck, “Optical Investigation of Electrical Spin Injection into Semiconductors,” Phys. Rev. B 68, 245319 (2003).
  28. P. Van Dorpe, V. F. Motsnyi, M. Nijboer, E. Goovaerts, V. I. Safarov, J. Das, W. V. Roy, G. Borghs, and J. D. Boeck, “Highly Efficient Room Temperature Spin Injection in a Metal–Insulator–Semiconductor Light Emitting Diode,” Jpn. J. Appl. Phys. 42, L502 (2003).
  29. D. J. Monsma and S. S. P. Parkin, “Spin Polarization of Tunneling Current from Ferromagnet/Al2O3 Interfaces Using Copper-Doped Aluminum Superconducting Films,” Appl. Phys. Lett. 77, 720 (2000).
  30. X. Jiang, R. Wang, S. van Dijken, R. Shelby, R. Macfarlane, G. S. Solomon, J. Harris, and S. S. P. Parkin, “Optical Detection of Hot-Electron Spin Injection into GaAs from a Magnetic Tunnel Transistor Source,” Phys. Rev. Lett. 90, 256603 (2003).
  31. S. van Dijken, X. Jiang, and S. S. P. Parkin, “Spin-Dependent Hot Electron Transport in Ni81Fe19 and Co84Fe16 Films on GaAs(001),” Phys. Rev. B 66, 094417 (2002).
  32. W. H. Butler, X.-G. Zhang, T. C. Schulthess, and J. M. MacLaren, “Spin-Dependent Tunneling Conductance of Fe/MgO/Fe Sandwiches,” Phys. Rev. B 63, 054416 (2001).
  33. J. Mathon and A. Umerski, “Theory of Tunneling Magnetoresistance of an Epitaxial Fe/MgO/Fe(001) Junction,” Phys. Rev. B 63, 220403 (2001).
  34. X.-G. Zhang and W. H. Butler, “Large Magnetoresistance in bcc Co/MgO/Co and FeCo/MgO/FeCo Tunneling Junctions,” Phys. Rev. B 70, 172407 (2004).
  35. S. S. P. Parkin, C. Kaiser, A. F. Panchula, P. Rice, M. G. Samant, S.-H. Yang, and B. Hughes, “Giant Tunneling Magnetoresistance at Room Temperature with MgO(100) Tunnel Barriers,” Nature Mater. 3, 862 (2004).
  36. X. Jiang, R. Wang, R. M. Shelby, R. M. Macfarlane, S. R. Bank, J. S. Harris, and S. S. P. Parkin, “Highly Spin-Polarized Room-Temperature Tunnel Injector for Semiconductor Spintronics Using MgO(100),” Phys. Rev. Lett. 94, 056601 (2005).
  37. R. Wang, X. Jiang, R. M. Shelby, R. M. Macfarlane, S. S. P. Parkin, S. R. Bank, and J. S. Harris, “Increase in Spin Injection Efficiency of a CoFe/MgO(100) Tunnel Spin Injector with Thermal Annealing,” Appl. Phys. Lett. 86, 052901 (2005).
  38. A. Vinattieri, J. Shah, T. C. Damen, D. S. Kim, L. N. Pfeiffer, M. Z. Maialle, and L. J. Sham, “Exciton Dynamics in GaAs Quantum Wells Under Resonant Excitation,” Phys. Rev. B 50, 10868 (1994).
  39. A. Malinowski, R. S. Britton, T. Grevatt, R. T. Harley, D. A. Ritchie, and M. Y. Simmons, “Spin Relaxation in GaAs/AlxGa1−xAs Quantum Wells,” Phys. Rev. B 62, 13034 (2000).
  40. W. H. Lau, J. T. Olesberg, and M. E. Flatté, “Electron-Spin Decoherence in Bulk and Quantum-Well Zinc-Blende Semiconductors,” Phys. Rev. B 64, R161301 (2001).
  41. W. H. Lau, J. T. Olesberg, and M. E. Flatté, “Electronic Structures and Electron Spin Decoherence in (001)-Grown Layered Zincblende Semiconductors”; see http://arxiv.org/cond-mat/0406201 (2004).
  42. S. Pfalz, R. Winkler, T. Nowitzki, D. Reuter, A. D. Wieck, D. Hägele, and M. Oestreich, “Optical Orientation of Electron Spins in GaAs Quantum Wells,” Phys. Rev. B 71, 165305 (2005).
  43. R. J. Elliott, “Theory of the Effect of Spin-Orbit Coupling on Magnetic Resonance in Some Semiconductors,” Phys. Rev. 96, 266 (1954).
  44. Y. Yafet, in Solid State Physics, Vol. 14, F. Seitz and D. Turnball, Eds., Academic Press, Inc., New York, 1963, p. 1.
  45. M. I. D'yakonov and V. I. Perel', “Spin Orientation of Electrons Associated with the Interband Absorption of Light in Semiconductors,” Sov. Phys. JETP 33, 1053 (1971).
  46. M. I. D'yakonov and V. Y. Kachorovskii, “Spin Relaxation of Two-Dimensional Electrons in Noncentrosymmetric Semiconductors,” Sov. Phys. Semicond. 20, 110 (1986).
  47. G. L. Bir, A. G. Aronov, and G. E. Pikus, “Spin Relaxation of Electrons Due to Scattering by Holes,” Sov. Phys. JETP 42, 705 (1976).
  48. H. Sanada, I. Arata, Y. Ohno, Z. Chen, K. Kayanuma, Y. Oka, F. Matsukura, and H. Ohno, “Relaxation of Photoinjected Spins During Drift Transport in GaAs,” Appl. Phys. Lett. 81, 2788 (2002).
  49. E. A. Barry, A. A. Kiselev, and K. W. Kim, “Electron Spin Relaxation Under Drift in GaAs,” Appl. Phys. Lett. 82, 3686 (2003).
  50. V. I. Puller, L. G. Mourokh, N. J. M. Horing, and A. Y. Smirnov, “Electron Spin Relaxation in a Semiconductor Quantum Well,” Phys. Rev. B 67, 155309 (2003).
  51. J. Feldmann, G. Peter, E. O. Göbel, P. Dawson, K. Moore, C. Foxon, and R. J. Elliott, “Linewidth Dependence of Radiative Exciton Lifetimes in Quantum Wells,” Phys. Rev. Lett. 59, 2337 (1987).
  52. M. Gurioli, A. Vinattieri, M. Colocci, C. Deparis, J. Massies, G. Neu, A. Bosacchi, and S. Franchi, “Temperature Dependence of the Radiative and Nonradiative Recombination Time in GaAs/AlxGa1−xAs Quantum-Well Structures,” Phys. Rev. B 44, 3115 (1991).


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