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IBM Journal of Research and Development
Spintronics   Volume 50, Number 1, 2006
Table of contents: HTMLPDF This article: HTMLPDF   Copyright info

Rapid-turnaround characterization methods for MRAM development - References

 by D. W. Abraham,
P. L. Trouilloud,
and D. C. Worledge
References

  1. S. S. P. Parkin, K. P. Roche, M. G. Samant, P. M. Rice, R. B. Beyers, R. E. Scheuerlein, E. J. O'Sullivan, S. L. Brown, J. Bucchignano, D. W. Abraham, Yu Lu, M. Rooks, P. L. Trouilloud, R. A. Wanner, and W. J. Gallagher, J. Appl. Phys. 85, No. 8, 5828 (1999).
  2. M. Durlam, P. Naji, A. Omair, M. M. DeHerrera, J. Calder, J. M. Slaughter, B. Engel, N. Rizzo, G. Grynkewich, B. Butcher, C. Tracy, K. Smith, K. Kyler, J. Ren, J. Molla, B. Feil, R. Williams, and S. Tehrani, Digest of Technical Papers, IEEE International Symposium on VLSI Circuits, (Cat. No. 02CH37302), 2002, p. 158.
  3. A. R. Sitaram, D. W. Abraham, C. Alof, D. Braun, S. Brown, G. Costrini, F. Findeis, M. Gaidis, E. Galligan, W. Glashauser, A. Gupta, H. Hoenigschmid, J. Hummel, S. Kanakasabapathy, I. Kasko, W. Kim, U. Klostermann, G. Y. Lee, R. Leuschner, K.-S. Low, Y. Lu, J. Nutzel, E. O'Sullivan, C. Park, W. Raberg, R. Robertazzi, C. Sarma, J. Schmid, P. L. Trouilloud, D. C. Worledge, G. Wright, W. J. Gallagher, and G. Muller, Digest of Technical Papers, IEEE Symposium on VLSI Technology, (Cat. No. 03CH37407), 2003, p. 15.
  4. M. Durlam, D. Addie, J. Akerman, B. Butcher, P. Brown, J. Chan, M. DeHerrera, B. N. Engel, B. Feil, G. Grynkewich, J. Janesky, M. Johnson, K. Kyler, J. Molla, J. Martin, K. Nagel, J. Nahas, J. Ren, N. D. Rizzo, T. Rodriguez, L. Savtchenko, J. Salter, J. M. Slaughter, K. Smith, J. J. Sun, M. Lien, K. Papworth, P. Shah, W. Qin, R. Williams, L. Wise, and S. Tehrani, IEEE International Conference on Integrated Circuit Design and Technology, (Cat. No. 04EX866), 2004, p. 4559.
  5. D. C. Worledge, Appl. Phys. Lett. 84, No. 22, 4559 (2004).
  6. See for example T. M. Maffitt, J. K. DeBrosse, J. A. Gabric, E. T. Gow, M. C. Lamorey, J. S. Parenteau, R. Willmott, M. A. Wood, and W. J. Gallagher, “Design considerations for MRAM,” IBM J. Res. & Dev. 50, No. 1, 25–39 (2006, this issue) and references cited therein.
  7. D. Worledge, P. Trouilloud, D. W. Abraham, and J. Schmid, U.S. Patent 6,927,569, August 9, 2005.
  8. D. C. Worledge and P. L. Trouilloud, Appl. Phys. Lett. 83, No. 1, 84 (2003).
  9. See http://www.capres.com.
  10. D. C. Worledge, Appl. Phys. Lett. 84, No. 10, 1695 (2004).
  11. D. C. Worledge and D. W. Abraham, Appl. Phys. Lett. 82, No. 25, 4522 (2003).
  12. T. Uchihashi, Y. Fukano, Y. Sugawara, S. Morita, A. Nakano, T. Ida, and T. Okada, Jpn. J. Appl. Phys. Part 2 (Lett.) 33, No. 11A, L1562 (1994).
  13. H. Kubota, G. Reiss, H. Brückl, W. Schepper, J. Wecker, and G. Gieres, Jpn. J. Appl. Phys. Part 2 (Lett.) 41, No. 2B, L180 (2002).
  14. S. S. P. Parkin, C. Kaiser, A. Panchula, P. M. Rice, B. Hughes, M. Samant, and S.-H. Yang, Nature Mater. 3, No. 12, 862 (2004).
  15. M. Durlam, D. Addie, J. Akerman, B. Butcher, P. Brown, J. Chan, M. DeHerrera, B. N. Engel, B. Feil, G. Grynkewich, J. Janesky, M. Johnson, K. Kyler, J. Molla, J. Martin, K. Nagel, J. Ren, N. D. Rizzo, T. Rodriguez, L. Savtchenko, J. Salter, J. M. Slaughter, K. Smith, J. J. Sun, M. Lien, K. Papworth, P. Shah, W. Qin, R. Williams, L. Wise, and S. Tehrani, Technical Digest. IEEE International Electron Devices Meeting, 2003, p. 34.6.1.


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