Each index entry below is accompanied by an author's name and a
page number; the author index contains the title of the paper and the
names of coauthors, if any.
Algorithms
Evaluation of branch-prediction methods on traces from commercial
applications
suite |
Hilgendorf |
579
|
Analytical models
Pseudorandom verification and emulation of an MPEG-2 transport
demultiplexor
suite |
Reed |
533
|
Arithmetic and logical unit design
Architecture and software support in IBM S/390 Parallel Enterprise
Servers for IEEE Floating-Point arithmetic
suite |
Abbott |
723
|
| The S/390 G5 floating-point unit |
Schwarz |
707
|
Capacitance
(Ba,Sr)TiO3 dielectrics for future stacked-capacitor
DRAM
suite |
Kotecki |
367
|
| Titanium dioxide (TiO2)-based gate insulators |
Campbell |
383
|
| Ultrathin nitrided gate dielectrics: Plasma processing, chemical
characterization, performance, and reliability |
Lucovsky |
301
|
Channel subsystem architecture
Fiber optic interconnects for the IBM S/390 Parallel Enterprise
Server G5
suite |
DeCusatis |
807
|
| Integrated Cluster Bus performance for the IBM S/390 Parallel
Sysplex |
Rao |
855
|
| Self-timed interface for S/390 I/O subsystem interconnection |
Hoke |
829
|
| The Integrated Cluster Bus for the IBM S/390 Parallel Sysplex |
Gregg |
795
|
Chemical vapor deposition
High-density plasma chemical vapor deposition of silicon-based
dielectric films for integrated circuits
suite |
Nguyen |
109
|
| Plasma-assisted chemical vapor deposition of dielectric thin films
for ULSI semiconductor circuits |
Cote |
5
|
| Plasma-deposited diamondlike carbon and related materials |
Grill |
147
|
Chemistry and chemical engineering
Cost-effective cleaning and high-quality thin gate oxides
suite |
Heyns |
339
|
| Growth and characterization of ultrathin nitrided silicon oxide
films |
Gusev |
265
|
| Nitrous oxide (N2O) processing for silicon oxynitride
gate dielectrics |
Ellis |
287
|
| Ultrathin nitrided gate dielectrics: Plasma processing, chemical
characterization, performance, and reliability |
Lucovsky |
301
|
Circuit and device technology
Key measurements of ultrathin gate dielectric reliability and
in-line monitoring
suite |
Abadeer |
407
|
| Nitrided gate oxides for 3.3-V logic application: Reliability and
device design considerations |
Hook |
393
|
CMOS
Chip integration methodology for the IBM S/390 G5 and G6 custom
microprocessors
suite |
Averill |
681
|
| Custom S/390 G5 and G6 microprocessors |
Check |
671
|
| Key measurements of ultrathin gate dielectric reliability and
in-line monitoring |
Abadeer |
407
|
| MCM technology and design for the S/390 G5 system |
Katopis |
621
|
| Nitrided gate oxides for 3.3-V logic application: Reliability and
device design considerations |
Hook |
393
|
| RAS strategy for IBM S/390 G5 and G6 |
Mueller |
875
|
| S/390 G5 CMOS microprocessor diagnostics |
Song |
899
|
Computer system availability
Event monitoring in highly complex hardware systems
suite |
Buechner |
889
|
| RAS strategy for IBM S/390 G5 and G6 |
Mueller |
875
|
Contamination
Cost-effective cleaning and high-quality thin gate oxides
suite |
Heyns |
339
|
Cryptography
S/390 CMOS Cryptographic Coprocessor Architecture: Overview and
design considerations
suite |
Yeh |
777
|
| S/390 Parallel Enterprise Server CMOS Cryptographic Coprocessor |
Easter |
761
|
Data compression
Single-pass constant- and variable-bit-rate MPEG-2 video
compression
suite |
Mohsenian |
489
|
Data transmission
Design of an MPEG-2 transport demultiplexor core
suite |
Anderson |
521
|
| Pseudorandom verification and emulation of an MPEG-2 transport
demultiplexor |
Reed |
533
|
Design verification
PLL modeling and verification in a cycle-simulation environment
suite |
Van Huben |
915
|
Device design
Nitrided gate oxides for 3.3-V logic application: Reliability and
device design considerations
suite |
Hook |
393
|
Dielectrics
(Ba,Sr)TiO3 dielectrics for future stacked-capacitor
DRAM
suite |
Kotecki |
367
|
| Characterization of silicon surface preparation processes for
advanced gate dielectrics |
Okorn-Schmidt |
351
|
| Growth and characterization of ultrathin nitrided silicon oxide
films |
Gusev |
265
|
| High-density plasma chemical vapor deposition of silicon-based dielectric films for integrated circuits |
Nguyen |
109
|
| Key measurements of ultrathin gate dielectric reliability and in-line monitoring |
Abadeer |
407
|
| Nitrided gate oxides for 3.3-V logic application: Reliability and
device design considerations |
Hook |
393
|
| Nitrous oxide (N2O) processing for silicon oxynitride
gate dielectrics |
Ellis |
287
|
| Plasma-assisted chemical vapor deposition of dielectric thin films for ULSI semiconductor circuits |
Cote |
5
|
| Plasma-assisted oxidation, anodization, and nitridation of silicon |
Hess |
127
|
| Scaling the gate dielectric: Materials, integration, and
reliability |
Buchanan |
245
|
| Titanium dioxide (TiO2)-based gate insulators |
Campbell |
383
|
| Ultrathin nitrided gate dielectrics: Plasma processing, chemical
characterization, performance, and reliability |
Lucovsky |
301
|
Diffusion
Scaling the gate dielectric: Materials, integration, and
reliability
suite |
Buchanan |
245
|
Electrochemistry
Characterization of silicon surface preparation processes for
advanced gate dielectrics
suite |
Okorn-Schmidt |
351
|
ESCON architecture
Fiber optic interconnects for the IBM S/390 Parallel Enterprise
Server G5
suite |
DeCusatis |
807
|
Etching
Characterization of silicon surface preparation processes for
advanced gate dielectrics
suite |
Okorn-Schmidt |
351
|
| Fabrication of magnetic recording heads and dry etching of head
materials |
Hsiao |
89
|
| Plasma-etching processes for ULSI semiconductor circuits |
Armacost |
39
|
| Plasma processing damage in etching and deposition |
Fonash |
103
|
| Surface science issues in plasma etching |
Oehrlein |
181
|
Fabrication
Ultrathin nitrided gate dielectrics: Plasma processing, chemical
characterization, performance, and reliability
suite |
Lucovsky |
301
|
Fault tolerance
IBM S/390 Parallel Enterprise Server G5 fault tolerance: A
historical perspective
suite |
Spainhower |
863
|
Fiber optics
Fiber optic interconnects for the IBM S/390 Parallel Enterprise
Server G5
suite |
DeCusatis |
807
|
Films
Titanium dioxide (TiO2)-based gate insulators
suite |
Campbell |
383
|
Films, oxide
(Ba,Sr)TiO3 dielectrics for future stacked-capacitor
DRAM
suite |
Kotecki |
367
|
Films, semiconductor
Plasma processing in the fabrication of amorphous silicon
thin-film-transistor arrays
suite |
Kuo |
73
|
Films, thin
(Ba,Sr)TiO3 dielectrics for future stacked-capacitor
DRAM
suite |
Kotecki |
367
|
| Fabrication of magnetic recording heads and dry etching of head
materials |
Hsiao |
89
|
| Growth and characterization of ultrathin nitrided silicon oxide
films |
Gusev |
265
|
| Modeling and characterization of quantization, polysilicon
depletion, and direct tunneling effects in MOSFETs with ultrathin
oxides |
Lo |
327
|
| Nitrided gate oxides for 3.3-V logic application: Reliability and
device design considerations |
Hook |
393
|
| Plasma-assisted chemical vapor deposition of dielectric thin films
for ULSI semiconductor circuits |
Cote |
5
|
| Plasma-deposited diamondlike carbon and related materials |
Grill |
147
|
| Plasma-etching processes for ULSI semiconductor circuits |
Armacost |
39
|
| Scaling the gate dielectric: Materials, integration, and
reliability |
Buchanan |
245
|
| Surface science issues in plasma etching |
Oehrlein |
181
|
| Titanium dioxide (TiO2)-based gate insulators |
Campbell |
383
|
| Ultrathin nitrided gate dielectrics: Plasma processing, chemical
characterization, performance, and reliability |
Lucovsky |
301
|
I/O devices, systems, and technology
Self-timed interface for S/390 I/O subsystem interconnection
suite |
Hoke |
829
|
IBM System/390 Parallel Enterprise Server
Architecture and software support in IBM S/390 Parallel Enterprise
Servers for IEEE Floating-Point arithmetic
suite |
Abbott |
723
|
| Chip integration methodology for the IBM S/390 G5 and G6 custom
microprocessors |
Averill |
681
|
| Custom S/390 G5 and G6 microprocessors |
Check |
671
|
| Event monitoring in highly complex hardware systems |
Buechner |
889
|
| Fiber optic interconnects for the IBM S/390 Parallel Enterprise
Server G5 |
DeCusatis |
807
|
| IBM S/390 Parallel Enterprise Server G5 fault tolerance: A
historical perspective |
Spainhower |
863
|
| IBM S/390 storage hierarchy G5 and G6 performance
considerations |
Jackson |
847
|
| Integrated Cluster Bus performance for the IBM S/390 Parallel
Sysplex |
Rao |
855
|
| MCM technology and design for the S/390 G5 system |
Katopis |
621
|
| PLL modeling and verification in a cycle-simulation environment |
Van Huben |
915
|
| RAS strategy for IBM S/390 G5 and G6 |
Mueller |
875
|
| S/390 CMOS Cryptographic Coprocessor Architecture: Overview and
design considerations |
Yeh |
777
|
| S/390 G5 CMOS microprocessor diagnostics |
Song |
899
|
| S/390 Parallel Enterprise Server CMOS Cryptographic Coprocessor |
Easter |
761
|
| Self-timed interface for S/390 I/O subsystem interconnection |
Hoke |
829
|
| System performance management for the S/390 Parallel Enterprise Server G5 |
Rizzolo |
651
|
| The Integrated Cluster Bus for the IBM S/390 Parallel Sysplex |
Gregg |
795
|
| The S/390 G5 floating-point unit |
Schwarz |
707
|
| The S/390 G5/G6 binodal cache |
Turgeon |
661
|
Image processing
A framework for programmable overlay multimedia networks
suite |
Manohar |
555
|
| Design of an MPEG-2 transport demultiplexor core |
Anderson |
521
|
| Memory reduction for HDTV decoders |
Lam |
545
|
| Pseudorandom verification and emulation of an MPEG-2 transport
demultiplexor |
Reed |
533
|
| Requirements for motion-estimation search range in MPEG-2 coded
video |
Gonzales |
453
|
| Single-pass constant- and variable-bit-rate MPEG-2 video
compression |
Mohsenian |
489
|
| Statistical multiplexing using MPEG-2 video encoders |
Böröczky |
511
|
| Two-pass MPEG-2 variable-bit-rate encoding |
Westerink |
471
|
Imaging technology
Plasma processing in the fabrication of amorphous silicon
thin-film-transistor arrays
suite |
Kuo |
73
|
Inductance
Plasma processing damage in etching and deposition
suite |
Fonash |
103
|
Insulators
(Ba,Sr)TiO3 dielectrics for future stacked-capacitor
DRAM
suite |
Kotecki |
367
|
| Titanium dioxide (TiO2)-based gate insulators |
Campbell |
383
|
Interconnection technology
Fiber optic interconnects for the IBM S/390 Parallel Enterprise
Server G5
suite |
DeCusatis |
807
|
Interfaces
Modeling and characterization of quantization, polysilicon
depletion, and direct tunneling effects in MOSFETs with ultrathin
oxides
suite |
Lo |
327
|
Logic design and technology
Architecture and software support in IBM S/390 Parallel Enterprise
Servers for IEEE Floating-Point arithmetic
suite |
Abbott |
723
|
| Evaluation of branch-prediction methods on traces from commercial
applications |
Hilgendorf |
579
|
| S/390 CMOS Cryptographic Coprocessor Architecture: Overview and
design considerations |
Yeh |
777
|
| S/390 Parallel Enterprise Server CMOS Cryptographic Coprocessor |
Easter |
761
|
| The S/390 G5 floating-point unit |
Schwarz |
707
|
Machine computation and data analysis
Evaluation of branch-prediction methods on traces from commercial
applications
suite |
Hilgendorf |
579
|
Magnetic recording
Fabrication of magnetic recording heads and dry etching of head
materials
suite |
Hsiao |
89
|
Manufacturing
Key measurements of ultrathin gate dielectric reliability and
in-line monitoring
suite |
Abadeer |
407
|
| Sputter deposition for semiconductor manufacturing |
Rossnagel |
163
|
Materials
Growth and characterization of ultrathin nitrided silicon oxide
films
suite |
Gusev |
265
|
| Scaling the gate dielectric: Materials, integration, and
reliability |
Buchanan |
245
|
| Ultrathin nitrided gate dielectrics: Plasma processing, chemical
characterization, performance, and reliability |
Lucovsky |
301
|
Materials technology
(Ba,Sr)TiO3 dielectrics for future stacked-capacitor
DRAM
suite |
Kotecki |
367
|
| Cost-effective cleaning and high-quality thin gate oxides |
Heyns |
339
|
| Surface science issues in plasma etching |
Oehrlein |
181
|
Mathematical functions and techniques
Architecture and software support in IBM S/390 Parallel Enterprise
Servers for IEEE Floating-Point arithmetic
suite |
Abbott |
723
|
Measurement
Characterization of silicon surface preparation processes for
advanced gate dielectrics
suite |
Okorn-Schmidt |
351
|
| Growth and characterization of ultrathin nitrided silicon oxide
films |
Gusev |
265
|
| Key measurements of ultrathin gate dielectric reliability and
in-line monitoring |
Abadeer |
407
|
| Titanium dioxide (TiO2)-based gate insulators |
Campbell |
383
|
| Ultrathin nitrided gate dielectrics: Plasma processing, chemical
characterization, performance, and reliability |
Lucovsky |
301
|
Memory (computer) design and technology
(Ba,Sr)TiO3 dielectrics for future stacked-capacitor
DRAM
suite |
Kotecki |
367
|
Memory, cache
The S/390 G5/G6 binodal cache
suite |
Turgeon |
661
|
Memory, random-access
(Ba,Sr)TiO3 dielectrics for future stacked-capacitor
DRAM
suite |
Kotecki |
367
|
Microelectronics
Chip integration methodology for the IBM S/390 G5 and G6 custom
microprocessors
suite |
Averill |
681
|
| Custom S/390 G5 and G6 microprocessors |
Check |
671
|
| MCM technology and design for the S/390 G5 system |
Katopis |
621
|
| System performance management for the S/390 Parallel Enterprise
Server G5 |
Rizzolo |
651
|
Microprocessor systems and applications
Chip integration methodology for the IBM S/390 G5 and G6 custom
microprocessors
suite |
Averill |
681
|
| Custom S/390 G5 and G6 microprocessors |
Check |
671
|
Models and modeling
Modeling and characterization of quantization, polysilicon
depletion, and direct tunneling effects in MOSFETs with ultrathin
oxides
suite |
Lo |
327
|
| Modeling and simulation methods for plasma processing |
Hamaguchi |
199
|
| PLL modeling and verification in a cycle-simulation environment |
Van Huben |
915
|
Multilayers
Titanium dioxide (TiO2)-based gate insulators
suite |
Campbell |
383
|
| Ultrathin nitrided gate dielectrics: Plasma processing, chemical
characterization, performance, and reliability |
Lucovsky |
301
|
Multimedia
A framework for programmable overlay multimedia networks
suite |
Manohar |
555
|
| Design of an MPEG-2 transport demultiplexor core |
Anderson |
521
|
| Memory reduction for HDTV decoders |
Lam |
545
|
| Pseudorandom verification and emulation of an MPEG-2 transport
demultiplexor |
Reed |
533
|
| Requirements for motion-estimation search range in MPEG-2 coded
video |
Gonzales |
453
|
| Single-pass constant- and variable-bit-rate MPEG-2 video
compression |
Mohsenian |
489
|
| Statistical multiplexing using MPEG-2 video encoders |
Böröczky |
511
|
| Two-pass MPEG-2 variable-bit-rate encoding |
Westerink |
471
|
Multiplexing
Design of an MPEG-2 transport demultiplexor core
suite |
Anderson |
521
|
| Pseudorandom verification and emulation of an MPEG-2 transport
demultiplexor |
Reed |
533
|
| Statistical multiplexing using MPEG-2 video encoders |
Böröczky |
511
|
Nanoscale structures and devices
Growth and characterization of ultrathin nitrided silicon oxide
films
suite |
Gusev |
265
|
Nitridation
Growth and characterization of ultrathin nitrided silicon oxide
films
suite |
Gusev |
265
|
| Nitrided gate oxides for 3.3-V logic application: Reliability and
device design considerations |
Hook |
393
|
| Nitrous oxide (N2O) processing for silicon oxynitride
gate dielectrics |
Ellis |
287
|
| Scaling the gate dielectric: Materials, integration, and
reliability |
Buchanan |
245
|
| Ultrathin nitrided gate dielectrics: Plasma processing, chemical
characterization, performance, and reliability |
Lucovsky |
301
|
Oxynitridation
Growth and characterization of ultrathin nitrided silicon oxide
films
suite |
Gusev |
265
|
| Nitrided gate oxides for 3.3-V logic application: Reliability and
device design considerations |
Hook |
393
|
| Nitrous oxide (N2O) processing for silicon oxynitride
gate dielectrics |
Ellis |
287
|
| Scaling the gate dielectric: Materials, integration, and
reliability |
Buchanan |
245
|
| Ultrathin nitrided gate dielectrics: Plasma processing, chemical
characterization, performance, and reliability |
Lucovsky |
301
|
Oxynitride
Growth and characterization of ultrathin nitrided silicon oxide
films
suite |
Gusev |
265
|
| Key measurements of ultrathin gate dielectric reliability and
in-line monitoring |
Abadeer |
407
|
| Nitrous oxide (N2O) processing for silicon oxynitride
gate dielectrics |
Ellis |
287
|
| Scaling the gate dielectric: Materials, integration, and
reliability |
Buchanan |
245
|
| Ultrathin nitrided gate dielectrics: Plasma processing, chemical
characterization, performance, and reliability |
Lucovsky |
301
|
Performance analysis
Evaluation of branch-prediction methods on traces from commercial
applications
suite |
Hilgendorf |
579
|
| Event monitoring in highly complex hardware systems |
Buechner |
889
|
| IBM S/390 storage hierarchyG5 and G6 performance
considerations |
Jackson |
847
|
| Integrated Cluster Bus performance for the IBM S/390 Parallel
Sysplex |
Rao |
855
|
| S/390 G5 CMOS microprocessor diagnostics |
Song |
899
|
Photothermal processes
Nitrous oxide (N2O) processing for silicon oxynitride
gate dielectrics
suite |
Ellis |
287
|
Physical chemistry
Characterization of silicon surface preparation processes for
advanced gate dielectrics
suite |
Okorn-Schmidt |
351
|
| Cost-effective cleaning and high-quality thin gate oxides |
Heyns |
339
|
Physics, solid state
Modeling and characterization of quantization, polysilicon
depletion, and direct tunneling effects in MOSFETs with ultrathin
oxides
suite |
Lo |
327
|
Plasma processing
Fabrication of magnetic recording heads and dry etching of head
materials
suite |
Hsiao |
89
|
| High-density plasma chemical vapor deposition of silicon-based
dielectric films for integrated circuits |
Nguyen |
109
|
| Modeling and simulation methods for plasma processing |
Hamaguchi |
199
|
| Plasma-assisted chemical vapor deposition of dielectric thin films
for ULSI semiconductor circuits |
Cote |
5
|
| Plasma-assisted oxidation, anodization, and nitridation of silicon |
Hess |
127
|
| Plasma-deposited diamondlike carbon and related materials |
Grill |
147
|
| Plasma-etching processes for ULSI semiconductor circuits |
Armacost |
39
|
| Plasma processing damage in etching and deposition |
Fonash |
103
|
| Plasma processing in the fabrication of amorphous silicon
thin-film-transistor arrays |
Kuo |
73
|
| Sputter deposition for semiconductor manufacturing |
Rossnagel |
163
|
| Surface science issues in plasma etching |
Oehrlein |
181
|
| Ultrathin nitrided gate dielectrics: Plasma processing, chemical
characterization, performance, and reliability |
Lucovsky |
301
|
Process control and development
Cost-effective cleaning and high-quality thin gate oxides
suite |
Heyns |
339
|
Quantum theory and effects
Modeling and characterization of quantization, polysilicon
depletion, and direct tunneling effects in MOSFETs with ultrathin
oxides
suite |
Lo |
327
|
Reliability
Cost-effective cleaning and high-quality thin gate oxides
suite |
Heyns |
339
|
| Key measurements of ultrathin gate dielectric reliability and
in-line monitoring |
Abadeer |
407
|
| Nitrided gate oxides for 3.3-V logic application: Reliability and
device design considerations |
Hook |
393
|
| RAS strategy for IBM S/390 G5 and G6 |
Mueller |
875
|
| Scaling the gate dielectric: Materials, integration, and
reliability |
Buchanan |
245
|
Semiconductor technology
Cost-effective cleaning and high-quality thin gate oxides
suite |
Heyns |
339
|
| High-density plasma chemical vapor deposition of silicon-based
dielectric films for integrated circuits |
Nguyen |
109
|
| Modeling and simulation methods for plasma processing |
Hamaguchi |
199
|
| Nitrided gate oxides for 3.3-V logic application: Reliability and
device design considerations |
Hook |
393
|
| Plasma-assisted chemical vapor deposition of dielectric thin films
for ULSI semiconductor circuits |
Cote |
5
|
| Plasma-assisted oxidation, anodization, and nitridation of silicon |
Hess |
127
|
| Plasma-etching processes for ULSI semiconductor circuits |
Armacost |
39
|
| Plasma processing damage in etching and deposition |
Fonash |
103
|
| Sputter deposition for semiconductor manufacturing |
Rossnagel |
163
|
Signal processing
Design of an MPEG-2 transport demultiplexor core
suite |
Anderson |
521
|
| Pseudorandom verification and emulation of an MPEG-2 transport
demultiplexor |
Reed |
533
|
| Requirements for motion-estimation search range in MPEG-2 coded
video |
Gonzales |
453
|
| Single-pass constant- and variable-bit-rate MPEG-2 video
compression |
Mohsenian |
489
|
| Statistical multiplexing using MPEG-2 video encoders |
Böröczky |
511
|
| Two-pass MPEG-2 variable-bit-rate encoding |
Westerink |
471
|
Silicon
Cost-effective cleaning and high-quality thin gate oxides
suite |
Heyns |
339
|
| Growth and characterization of ultrathin nitrided silicon oxide
films |
Gusev |
265
|
| Plasma-assisted oxidation, anodization, and nitridation of silicon |
Hess |
127
|
| Plasma-etching processes for ULSI semiconductor circuits |
Armacost |
39
|
| Scaling the gate dielectric: Materials, integration, and
reliability |
Buchanan |
245
|
Silicon dioxide
Cost-effective cleaning and high-quality thin gate oxides
suite |
Heyns |
339
|
| Growth and characterization of ultrathin nitrided silicon oxide
films |
Gusev |
265
|
| Key measurements of ultrathin gate dielectric reliability and
in-line monitoring |
Abadeer |
407
|
| Modeling and characterization of quantization, polysilicon
depletion, and direct tunneling effects in MOSFETs with ultrathin
oxides |
Lo |
327
|
| Nitrided gate oxides for 3.3-V logic application: Reliability and
device design considerations |
Hook |
393
|
| Scaling the gate dielectric: Materials, integration, and
reliability |
Buchanan |
245
|
| Ultrathin nitrided gate dielectrics: Plasma processing, chemical
characterization, performance, and reliability |
Lucovsky |
301
|
Silicon nitride
Growth and characterization of ultrathin nitrided silicon oxide
films
suite |
Gusev |
265
|
| Key measurements of ultrathin gate dielectric reliability and
in-line monitoring |
Abadeer |
407
|
| Nitrous oxide (N2O) processing for silicon oxynitride
gate dielectrics |
Ellis |
287
|
| Scaling the gate dielectric: Materials, integration, and
reliability |
Buchanan |
245
|
| Ultrathin nitrided gate dielectrics: Plasma processing, chemical
characterization, performance, and reliability |
Lucovsky |
301
|
Silicon oxidation
Characterization of silicon surface preparation processes for
advanced gate dielectrics
suite |
Okorn-Schmidt |
351
|
| Growth and characterization of ultrathin nitrided silicon oxide
films |
Gusev |
265
|
| Scaling the gate dielectric: Materials, integration, and
reliability |
Buchanan |
245
|
| Ultrathin nitrided gate dielectrics: Plasma processing, chemical
characterization, performance, and reliability |
Lucovsky |
301
|
Sputtering
Sputter deposition for semiconductor manufacturing
suite |
Rossnagel |
163
|
Storage hierarchies
IBM S/390 storage hierarchyG5 and G6 performance
considerations
suite |
Jackson |
847
|
| The S/390 G5/G6 binodal cache |
Turgeon |
661
|
Surface effects
Characterization of silicon surface preparation processes for
advanced gate dielectrics
suite |
Okorn-Schmidt |
351
|
| Modeling and simulation methods for plasma processing |
Hamaguchi |
199
|
Surface passivation
Characterization of silicon surface preparation processes for
advanced gate dielectrics
suite |
Okorn-Schmidt |
351
|
| Growth and characterization of ultrathin nitrided silicon oxide
films |
Gusev |
265
|
| Scaling the gate dielectric: Materials, integration, and
reliability |
Buchanan |
245
|
| Titanium dioxide (TiO2)-based gate insulators |
Campbell |
383
|
| Ultrathin nitrided gate dielectrics: Plasma processing, chemical
characterization, performance, and reliability |
Lucovsky |
301
|
Surface science
Cost-effective cleaning and high-quality thin gate oxides
suite |
Heyns |
339
|
Testing
Key measurements of ultrathin gate dielectric reliability and
in-line monitoring
suite |
Abadeer |
407
|
Thickness measurement
Modeling and characterization of quantization, polysilicon
depletion, and direct tunneling effects in MOSFETs with ultrathin
oxides
suite |
Lo |
327
|
Transistors
Modeling and characterization of quantization, polysilicon
depletion, and direct tunneling effects in MOSFETs with ultrathin
oxides
suite |
Lo |
327
|
| Scaling the gate dielectric: Materials, integration, and
reliability |
Buchanan |
245
|
| Titanium dioxide (TiO2)-based gate insulators |
Campbell |
383
|
Transistors, thin film (TFTs)
Plasma processing in the fabrication of amorphous silicon
thin-film-transistor arrays
suite |
Kuo |
73
|
Tunneling
Modeling and characterization of quantization, polysilicon
depletion, and direct tunneling effects in MOSFETs with ultrathin
oxides
suite |
Lo |
327
|
Video signals
A framework for programmable overlay multimedia networks
suite |
Manohar |
555
|
| Design of an MPEG-2 transport demultiplexor core |
Anderson |
521
|
| Memory reduction for HDTV decoders |
Lam |
545
|
| Pseudorandom verification and emulation of an MPEG-2 transport
demultiplexor |
Reed |
533
|
| Requirements for motion-estimation search range in MPEG-2 coded
video |
Gonzales |
453
|
| Single-pass constant- and variable-bit-rate MPEG-2 video
compression |
Mohsenian |
489
|
| Statistical multiplexing using MPEG-2 video encoders |
Böröczky |
511
|
| Two-pass MPEG-2 variable-bit-rate encoding |
Westerink |
471
|
| Plasma-deposited diamondlike carbon and related materials
|
Grill |
147
|