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Journal of Research and Development  
Volume 43, Numbers 5/6, 1999
IBM S/390 Server G5/G6
 Table of contents: arrowHTML arrowPDF arrowASCII   This article: HTML arrowPDF arrowASCII   DOI: 10.1147/rd.435.0937 arrowCopyright info
   

Subject index for papers in Volume 43

Subject index for papers in Volume 43

Each index entry below is accompanied by an author's name and a page number; the author index contains the title of the paper and the names of coauthors, if any.

Algorithms
Evaluation of branch-prediction methods on traces from commercial applications suite
Hilgendorf 579
Analytical models
Pseudorandom verification and emulation of an MPEG-2 transport demultiplexor suite
Reed 533
Arithmetic and logical unit design
Architecture and software support in IBM S/390 Parallel Enterprise Servers for IEEE Floating-Point arithmetic suite
Abbott 723
The S/390 G5 floating-point unit Schwarz 707
Capacitance
(Ba,Sr)TiO3 dielectrics for future stacked-capacitor DRAM suite
Kotecki 367
Titanium dioxide (TiO2)-based gate insulators Campbell 383
Ultrathin nitrided gate dielectrics: Plasma processing, chemical characterization, performance, and reliability Lucovsky 301
Channel subsystem architecture
Fiber optic interconnects for the IBM S/390 Parallel Enterprise Server G5 suite
DeCusatis 807
Integrated Cluster Bus performance for the IBM S/390 Parallel Sysplex Rao 855
Self-timed interface for S/390 I/O subsystem interconnection Hoke 829
The Integrated Cluster Bus for the IBM S/390 Parallel Sysplex Gregg 795
Chemical vapor deposition
High-density plasma chemical vapor deposition of silicon-based dielectric films for integrated circuits suite
Nguyen 109
Plasma-assisted chemical vapor deposition of dielectric thin films for ULSI semiconductor circuits Cote 5
Plasma-deposited diamondlike carbon and related materials Grill 147
Chemistry and chemical engineering
Cost-effective cleaning and high-quality thin gate oxides suite
Heyns 339
Growth and characterization of ultrathin nitrided silicon oxide films Gusev 265
Nitrous oxide (N2O) processing for silicon oxynitride gate dielectrics Ellis 287
Ultrathin nitrided gate dielectrics: Plasma processing, chemical characterization, performance, and reliability Lucovsky 301
Circuit and device technology
Key measurements of ultrathin gate dielectric reliability and in-line monitoring suite
Abadeer 407
Nitrided gate oxides for 3.3-V logic application: Reliability and device design considerations Hook 393
CMOS
Chip integration methodology for the IBM S/390 G5 and G6 custom microprocessors suite
Averill 681
Custom S/390 G5 and G6 microprocessors Check 671
Key measurements of ultrathin gate dielectric reliability and in-line monitoring Abadeer 407
MCM technology and design for the S/390 G5 system Katopis 621
Nitrided gate oxides for 3.3-V logic application: Reliability and device design considerations Hook 393
RAS strategy for IBM S/390 G5 and G6 Mueller 875
S/390 G5 CMOS microprocessor diagnostics Song 899
Computer system availability
Event monitoring in highly complex hardware systems suite
Buechner 889
RAS strategy for IBM S/390 G5 and G6 Mueller 875
Contamination
Cost-effective cleaning and high-quality thin gate oxides suite
Heyns 339
Cryptography
S/390 CMOS Cryptographic Coprocessor Architecture: Overview and design considerations suite
Yeh 777
S/390 Parallel Enterprise Server CMOS Cryptographic Coprocessor Easter 761
Data compression
Single-pass constant- and variable-bit-rate MPEG-2 video compression suite
Mohsenian 489
Data transmission
Design of an MPEG-2 transport demultiplexor core suite
Anderson 521
Pseudorandom verification and emulation of an MPEG-2 transport demultiplexor Reed 533
Design verification
PLL modeling and verification in a cycle-simulation environment suite
Van Huben 915
Device design
Nitrided gate oxides for 3.3-V logic application: Reliability and device design considerations suite
Hook 393
Dielectrics
(Ba,Sr)TiO3 dielectrics for future stacked-capacitor DRAM suite
Kotecki 367
Characterization of silicon surface preparation processes for advanced gate dielectrics Okorn-Schmidt 351
Growth and characterization of ultrathin nitrided silicon oxide films Gusev 265
High-density plasma chemical vapor deposition of silicon-based dielectric films for integrated circuits Nguyen 109
Key measurements of ultrathin gate dielectric reliability and in-line monitoring Abadeer 407
Nitrided gate oxides for 3.3-V logic application: Reliability and device design considerations Hook 393
Nitrous oxide (N2O) processing for silicon oxynitride gate dielectrics Ellis 287
Plasma-assisted chemical vapor deposition of dielectric thin films for ULSI semiconductor circuits Cote 5
Plasma-assisted oxidation, anodization, and nitridation of silicon Hess 127
Scaling the gate dielectric: Materials, integration, and reliability Buchanan 245
Titanium dioxide (TiO2)-based gate insulators Campbell 383
Ultrathin nitrided gate dielectrics: Plasma processing, chemical characterization, performance, and reliability Lucovsky 301
Diffusion
Scaling the gate dielectric: Materials, integration, and reliability suite
Buchanan 245
Electrochemistry
Characterization of silicon surface preparation processes for advanced gate dielectrics suite
Okorn-Schmidt 351
ESCON architecture
Fiber optic interconnects for the IBM S/390 Parallel Enterprise Server G5 suite
DeCusatis 807
Etching
Characterization of silicon surface preparation processes for advanced gate dielectrics suite
Okorn-Schmidt 351
Fabrication of magnetic recording heads and dry etching of head materials Hsiao 89
Plasma-etching processes for ULSI semiconductor circuits Armacost 39
Plasma processing damage in etching and deposition Fonash 103
Surface science issues in plasma etching Oehrlein 181
Fabrication
Ultrathin nitrided gate dielectrics: Plasma processing, chemical characterization, performance, and reliability suite
Lucovsky 301
Fault tolerance
IBM S/390 Parallel Enterprise Server G5 fault tolerance: A historical perspective suite
Spainhower 863
Fiber optics
Fiber optic interconnects for the IBM S/390 Parallel Enterprise Server G5 suite
DeCusatis 807
Films
Titanium dioxide (TiO2)-based gate insulators suite
Campbell 383
Films, oxide
(Ba,Sr)TiO3 dielectrics for future stacked-capacitor DRAM suite
Kotecki 367
Films, semiconductor
Plasma processing in the fabrication of amorphous silicon thin-film-transistor arrays suite
Kuo 73
Films, thin
(Ba,Sr)TiO3 dielectrics for future stacked-capacitor DRAM suite
Kotecki 367
Fabrication of magnetic recording heads and dry etching of head materials Hsiao 89
Growth and characterization of ultrathin nitrided silicon oxide films Gusev 265
Modeling and characterization of quantization, polysilicon depletion, and direct tunneling effects in MOSFETs with ultrathin oxides Lo 327
Nitrided gate oxides for 3.3-V logic application: Reliability and device design considerations Hook 393
Plasma-assisted chemical vapor deposition of dielectric thin films for ULSI semiconductor circuits Cote 5
Plasma-deposited diamondlike carbon and related materials Grill 147
Plasma-etching processes for ULSI semiconductor circuits Armacost 39
Scaling the gate dielectric: Materials, integration, and reliability Buchanan 245
Surface science issues in plasma etching Oehrlein 181
Titanium dioxide (TiO2)-based gate insulators Campbell 383
Ultrathin nitrided gate dielectrics: Plasma processing, chemical characterization, performance, and reliability Lucovsky 301
I/O devices, systems, and technology
Self-timed interface for S/390 I/O subsystem interconnection suite
Hoke 829
IBM System/390 Parallel Enterprise Server
Architecture and software support in IBM S/390 Parallel Enterprise Servers for IEEE Floating-Point arithmetic suite
Abbott 723
Chip integration methodology for the IBM S/390 G5 and G6 custom microprocessors Averill 681
Custom S/390 G5 and G6 microprocessors Check 671
Event monitoring in highly complex hardware systems Buechner 889
Fiber optic interconnects for the IBM S/390 Parallel Enterprise Server G5 DeCusatis 807
IBM S/390 Parallel Enterprise Server G5 fault tolerance: A historical perspective Spainhower 863
IBM S/390 storage hierarchy– G5 and G6 performance considerations Jackson 847
Integrated Cluster Bus performance for the IBM S/390 Parallel Sysplex Rao 855
MCM technology and design for the S/390 G5 system Katopis 621
PLL modeling and verification in a cycle-simulation environment Van Huben 915
RAS strategy for IBM S/390 G5 and G6 Mueller 875
S/390 CMOS Cryptographic Coprocessor Architecture: Overview and design considerations Yeh 777
S/390 G5 CMOS microprocessor diagnostics Song 899
S/390 Parallel Enterprise Server CMOS Cryptographic Coprocessor Easter 761
Self-timed interface for S/390 I/O subsystem interconnection Hoke 829
System performance management for the S/390 Parallel Enterprise Server G5 Rizzolo 651
The Integrated Cluster Bus for the IBM S/390 Parallel Sysplex Gregg 795
The S/390 G5 floating-point unit Schwarz 707
The S/390 G5/G6 binodal cache Turgeon 661
Image processing
A framework for programmable overlay multimedia networks suite
Manohar 555
Design of an MPEG-2 transport demultiplexor core Anderson 521
Memory reduction for HDTV decoders Lam 545
Pseudorandom verification and emulation of an MPEG-2 transport demultiplexor Reed 533
Requirements for motion-estimation search range in MPEG-2 coded video Gonzales 453
Single-pass constant- and variable-bit-rate MPEG-2 video compression Mohsenian 489
Statistical multiplexing using MPEG-2 video encoders Böröczky 511
Two-pass MPEG-2 variable-bit-rate encoding Westerink 471
Imaging technology
Plasma processing in the fabrication of amorphous silicon thin-film-transistor arrays suite
Kuo 73
Inductance
Plasma processing damage in etching and deposition suite
Fonash 103
Insulators
(Ba,Sr)TiO3 dielectrics for future stacked-capacitor DRAM suite
Kotecki 367
Titanium dioxide (TiO2)-based gate insulators Campbell 383
Interconnection technology
Fiber optic interconnects for the IBM S/390 Parallel Enterprise Server G5 suite
DeCusatis 807
Interfaces
Modeling and characterization of quantization, polysilicon depletion, and direct tunneling effects in MOSFETs with ultrathin oxides suite
Lo 327
Logic design and technology
Architecture and software support in IBM S/390 Parallel Enterprise Servers for IEEE Floating-Point arithmetic suite
Abbott 723
Evaluation of branch-prediction methods on traces from commercial applications Hilgendorf 579
S/390 CMOS Cryptographic Coprocessor Architecture: Overview and design considerations Yeh 777
S/390 Parallel Enterprise Server CMOS Cryptographic Coprocessor Easter 761
The S/390 G5 floating-point unit Schwarz 707
Machine computation and data analysis
Evaluation of branch-prediction methods on traces from commercial applications suite
Hilgendorf 579
Magnetic recording
Fabrication of magnetic recording heads and dry etching of head materials suite
Hsiao 89
Manufacturing
Key measurements of ultrathin gate dielectric reliability and in-line monitoring suite
Abadeer 407
Sputter deposition for semiconductor manufacturing Rossnagel 163
Materials
Growth and characterization of ultrathin nitrided silicon oxide films suite
Gusev 265
Scaling the gate dielectric: Materials, integration, and reliability Buchanan 245
Ultrathin nitrided gate dielectrics: Plasma processing, chemical characterization, performance, and reliability Lucovsky 301
Materials technology
(Ba,Sr)TiO3 dielectrics for future stacked-capacitor DRAM suite
Kotecki 367
Cost-effective cleaning and high-quality thin gate oxides Heyns 339
Surface science issues in plasma etching Oehrlein 181
Mathematical functions and techniques
Architecture and software support in IBM S/390 Parallel Enterprise Servers for IEEE Floating-Point arithmetic suite
Abbott 723
Measurement
Characterization of silicon surface preparation processes for advanced gate dielectrics suite
Okorn-Schmidt 351
Growth and characterization of ultrathin nitrided silicon oxide films Gusev 265
Key measurements of ultrathin gate dielectric reliability and in-line monitoring Abadeer 407
Titanium dioxide (TiO2)-based gate insulators Campbell 383
Ultrathin nitrided gate dielectrics: Plasma processing, chemical characterization, performance, and reliability Lucovsky 301
Memory (computer) design and technology
(Ba,Sr)TiO3 dielectrics for future stacked-capacitor DRAM suite
Kotecki 367
Memory, cache
The S/390 G5/G6 binodal cache suite
Turgeon 661
Memory, random-access
(Ba,Sr)TiO3 dielectrics for future stacked-capacitor DRAM suite
Kotecki 367
Microelectronics
Chip integration methodology for the IBM S/390 G5 and G6 custom microprocessors suite
Averill 681
Custom S/390 G5 and G6 microprocessors Check 671
MCM technology and design for the S/390 G5 system Katopis 621
System performance management for the S/390 Parallel Enterprise Server G5 Rizzolo 651
Microprocessor systems and applications
Chip integration methodology for the IBM S/390 G5 and G6 custom microprocessors suite
Averill 681
Custom S/390 G5 and G6 microprocessors Check 671
Models and modeling
Modeling and characterization of quantization, polysilicon depletion, and direct tunneling effects in MOSFETs with ultrathin oxides suite
Lo 327
Modeling and simulation methods for plasma processing Hamaguchi 199
PLL modeling and verification in a cycle-simulation environment Van Huben 915
Multilayers
Titanium dioxide (TiO2)-based gate insulators suite
Campbell 383
Ultrathin nitrided gate dielectrics: Plasma processing, chemical characterization, performance, and reliability Lucovsky 301
Multimedia
A framework for programmable overlay multimedia networks suite
Manohar 555
Design of an MPEG-2 transport demultiplexor core Anderson 521
Memory reduction for HDTV decoders Lam 545
Pseudorandom verification and emulation of an MPEG-2 transport demultiplexor Reed 533
Requirements for motion-estimation search range in MPEG-2 coded video Gonzales 453
Single-pass constant- and variable-bit-rate MPEG-2 video compression Mohsenian 489
Statistical multiplexing using MPEG-2 video encoders Böröczky 511
Two-pass MPEG-2 variable-bit-rate encoding Westerink 471
Multiplexing
Design of an MPEG-2 transport demultiplexor core suite
Anderson 521
Pseudorandom verification and emulation of an MPEG-2 transport demultiplexor Reed 533
Statistical multiplexing using MPEG-2 video encoders Böröczky 511
Nanoscale structures and devices
Growth and characterization of ultrathin nitrided silicon oxide films suite
Gusev 265
Nitridation
Growth and characterization of ultrathin nitrided silicon oxide films suite
Gusev 265
Nitrided gate oxides for 3.3-V logic application: Reliability and device design considerations Hook 393
Nitrous oxide (N2O) processing for silicon oxynitride gate dielectrics Ellis 287
Scaling the gate dielectric: Materials, integration, and reliability Buchanan 245
Ultrathin nitrided gate dielectrics: Plasma processing, chemical characterization, performance, and reliability Lucovsky 301
Oxynitridation
Growth and characterization of ultrathin nitrided silicon oxide films suite
Gusev 265
Nitrided gate oxides for 3.3-V logic application: Reliability and device design considerations Hook 393
Nitrous oxide (N2O) processing for silicon oxynitride gate dielectrics Ellis 287
Scaling the gate dielectric: Materials, integration, and reliability Buchanan 245
Ultrathin nitrided gate dielectrics: Plasma processing, chemical characterization, performance, and reliability Lucovsky 301
Oxynitride
Growth and characterization of ultrathin nitrided silicon oxide films suite
Gusev 265
Key measurements of ultrathin gate dielectric reliability and in-line monitoring Abadeer 407
Nitrous oxide (N2O) processing for silicon oxynitride gate dielectrics Ellis 287
Scaling the gate dielectric: Materials, integration, and reliability Buchanan 245
Ultrathin nitrided gate dielectrics: Plasma processing, chemical characterization, performance, and reliability Lucovsky 301
Performance analysis
Evaluation of branch-prediction methods on traces from commercial applications suite
Hilgendorf 579
Event monitoring in highly complex hardware systems Buechner 889
IBM S/390 storage hierarchy–G5 and G6 performance considerations Jackson 847
Integrated Cluster Bus performance for the IBM S/390 Parallel Sysplex Rao 855
S/390 G5 CMOS microprocessor diagnostics Song 899
Photothermal processes
Nitrous oxide (N2O) processing for silicon oxynitride gate dielectrics suite
Ellis 287
Physical chemistry
Characterization of silicon surface preparation processes for advanced gate dielectrics suite
Okorn-Schmidt 351
Cost-effective cleaning and high-quality thin gate oxides Heyns 339
Physics, solid state
Modeling and characterization of quantization, polysilicon depletion, and direct tunneling effects in MOSFETs with ultrathin oxides suite
Lo 327
Plasma processing
Fabrication of magnetic recording heads and dry etching of head materials suite
Hsiao 89
High-density plasma chemical vapor deposition of silicon-based dielectric films for integrated circuits Nguyen 109
Modeling and simulation methods for plasma processing Hamaguchi 199
Plasma-assisted chemical vapor deposition of dielectric thin films for ULSI semiconductor circuits Cote 5
Plasma-assisted oxidation, anodization, and nitridation of silicon Hess 127
Plasma-deposited diamondlike carbon and related materials Grill 147
Plasma-etching processes for ULSI semiconductor circuits Armacost 39
Plasma processing damage in etching and deposition Fonash 103
Plasma processing in the fabrication of amorphous silicon thin-film-transistor arrays Kuo 73
Sputter deposition for semiconductor manufacturing Rossnagel 163
Surface science issues in plasma etching Oehrlein 181
Ultrathin nitrided gate dielectrics: Plasma processing, chemical characterization, performance, and reliability Lucovsky 301
Process control and development
Cost-effective cleaning and high-quality thin gate oxides suite
Heyns 339
Quantum theory and effects
Modeling and characterization of quantization, polysilicon depletion, and direct tunneling effects in MOSFETs with ultrathin oxides suite
Lo 327
Reliability
Cost-effective cleaning and high-quality thin gate oxides suite
Heyns 339
Key measurements of ultrathin gate dielectric reliability and in-line monitoring Abadeer 407
Nitrided gate oxides for 3.3-V logic application: Reliability and device design considerations Hook 393
RAS strategy for IBM S/390 G5 and G6 Mueller 875
Scaling the gate dielectric: Materials, integration, and reliability Buchanan 245
Semiconductor technology
Cost-effective cleaning and high-quality thin gate oxides suite
Heyns 339
High-density plasma chemical vapor deposition of silicon-based dielectric films for integrated circuits Nguyen 109
Modeling and simulation methods for plasma processing Hamaguchi 199
Nitrided gate oxides for 3.3-V logic application: Reliability and device design considerations Hook 393
Plasma-assisted chemical vapor deposition of dielectric thin films for ULSI semiconductor circuits Cote 5
Plasma-assisted oxidation, anodization, and nitridation of silicon Hess 127
Plasma-etching processes for ULSI semiconductor circuits Armacost 39
Plasma processing damage in etching and deposition Fonash 103
Sputter deposition for semiconductor manufacturing Rossnagel 163
Signal processing
Design of an MPEG-2 transport demultiplexor core suite
Anderson 521
Pseudorandom verification and emulation of an MPEG-2 transport demultiplexor Reed 533
Requirements for motion-estimation search range in MPEG-2 coded video Gonzales 453
Single-pass constant- and variable-bit-rate MPEG-2 video compression Mohsenian 489
Statistical multiplexing using MPEG-2 video encoders Böröczky 511
Two-pass MPEG-2 variable-bit-rate encoding Westerink 471
Silicon
Cost-effective cleaning and high-quality thin gate oxides suite
Heyns 339
Growth and characterization of ultrathin nitrided silicon oxide films Gusev 265
Plasma-assisted oxidation, anodization, and nitridation of silicon Hess 127
Plasma-etching processes for ULSI semiconductor circuits Armacost 39
Scaling the gate dielectric: Materials, integration, and reliability Buchanan 245
Silicon dioxide
Cost-effective cleaning and high-quality thin gate oxides suite
Heyns 339
Growth and characterization of ultrathin nitrided silicon oxide films Gusev 265
Key measurements of ultrathin gate dielectric reliability and in-line monitoring Abadeer 407
Modeling and characterization of quantization, polysilicon depletion, and direct tunneling effects in MOSFETs with ultrathin oxides Lo 327
Nitrided gate oxides for 3.3-V logic application: Reliability and device design considerations Hook 393
Scaling the gate dielectric: Materials, integration, and reliability Buchanan 245
Ultrathin nitrided gate dielectrics: Plasma processing, chemical characterization, performance, and reliability Lucovsky 301
Silicon nitride
Growth and characterization of ultrathin nitrided silicon oxide films suite
Gusev 265
Key measurements of ultrathin gate dielectric reliability and in-line monitoring Abadeer 407
Nitrous oxide (N2O) processing for silicon oxynitride gate dielectrics Ellis 287
Scaling the gate dielectric: Materials, integration, and reliability Buchanan 245
Ultrathin nitrided gate dielectrics: Plasma processing, chemical characterization, performance, and reliability Lucovsky 301
Silicon oxidation
Characterization of silicon surface preparation processes for advanced gate dielectrics suite
Okorn-Schmidt 351
Growth and characterization of ultrathin nitrided silicon oxide films Gusev 265
Scaling the gate dielectric: Materials, integration, and reliability Buchanan 245
Ultrathin nitrided gate dielectrics: Plasma processing, chemical characterization, performance, and reliability Lucovsky 301
Sputtering
Sputter deposition for semiconductor manufacturing suite
Rossnagel 163
Storage hierarchies
IBM S/390 storage hierarchy–G5 and G6 performance considerations suite
Jackson 847
The S/390 G5/G6 binodal cache Turgeon 661
Surface effects
Characterization of silicon surface preparation processes for advanced gate dielectrics suite
Okorn-Schmidt 351
Modeling and simulation methods for plasma processing Hamaguchi 199
Surface passivation
Characterization of silicon surface preparation processes for advanced gate dielectrics suite
Okorn-Schmidt 351
Growth and characterization of ultrathin nitrided silicon oxide films Gusev 265
Scaling the gate dielectric: Materials, integration, and reliability Buchanan 245
Titanium dioxide (TiO2)-based gate insulators Campbell 383
Ultrathin nitrided gate dielectrics: Plasma processing, chemical characterization, performance, and reliability Lucovsky 301
Surface science
Cost-effective cleaning and high-quality thin gate oxides suite
Heyns 339
Testing
Key measurements of ultrathin gate dielectric reliability and in-line monitoring suite
Abadeer 407
Thickness measurement
Modeling and characterization of quantization, polysilicon depletion, and direct tunneling effects in MOSFETs with ultrathin oxides suite
Lo 327
Transistors
Modeling and characterization of quantization, polysilicon depletion, and direct tunneling effects in MOSFETs with ultrathin oxides suite
Lo 327
Scaling the gate dielectric: Materials, integration, and reliability Buchanan 245
Titanium dioxide (TiO2)-based gate insulators Campbell 383
Transistors, thin film (TFTs)
Plasma processing in the fabrication of amorphous silicon thin-film-transistor arrays suite
Kuo 73
Tunneling
Modeling and characterization of quantization, polysilicon depletion, and direct tunneling effects in MOSFETs with ultrathin oxides suite
Lo 327
Video signals
A framework for programmable overlay multimedia networks suite
Manohar 555
Design of an MPEG-2 transport demultiplexor core Anderson 521
Memory reduction for HDTV decoders Lam 545
Pseudorandom verification and emulation of an MPEG-2 transport demultiplexor Reed 533
Requirements for motion-estimation search range in MPEG-2 coded video Gonzales 453
Single-pass constant- and variable-bit-rate MPEG-2 video compression Mohsenian 489
Statistical multiplexing using MPEG-2 video encoders Böröczky 511
Two-pass MPEG-2 variable-bit-rate encoding Westerink 471
Plasma-deposited diamondlike carbon and related materials Grill 147