|
|
 |
|
 |
Volume 43, Number 3, 1999
Ultrathin dielectric films |
|
Table of contents: HTML PDF ASCII |
|
This article: HTML PDF ASCII |
Copyright info |
 |
 |
 |
 |
| |
|
Ultrathin nitrided gate dielectrics: Plasma processing, chemical characterization, performance, and reliability - References
|
 |
by G. Lucovsky
|
 |
 |
 |
|
References
-
H.-Y. Yang, H. Niimi, and G. Lucovsky, J. Appl. Phys. 83, 2327 (1998).
-
E. M. Vogel, K. Z. Ahmed, B. Hornung, W. K. Henson, P. K. McLarty, G. Lucovsky, J. R. Hauser, and J. J. Wortman, IEEE Trans. Electron Devices 45, 1350 (1998).
-
G. Lucovsky, D. V. Tsu, R. A. Rudder, and R. J. Markunas, in Thin Film Processes II, J. L. Vossen and W. Kern, Eds., Academic Press, Inc., Boston, 1991, p. 565.
-
G. Lucovsky, H. Niimi, K. Koh, D. R. Lee, and Z. Jing, in The Physics and Chemistry of SiO2 and the Si-SiO2 Interface, H. Z. Massoud, E. H. Poindexter, and C. R. Helms, Eds., The Electrochemical Society, Pennington, NJ, 1996, p. 441.
-
Z. Lu, M. J. Williams, P. F. Santos-Filho, and G. Lucovsky, J. Vac. Sci. Technol. A 13, 607 (1995); G. Lucovsky, P. Santos-Filho, G. Stevens, Z. Jing, and A. Banerjee, J. Non-Cryst. Solids 198-200, 19 (1996).
-
S. V. Hattangady, H. Niimi, and G. Lucovsky, J. Vac. Sci. Technol. A 14, 3017 (1996).
-
S. C. Song, H. F. Luan, Y. Y. Chen, M. Gardner, J. Fulford, M. Allen, and D. L. Kwong, IEDM Tech. Digest, p. 373 (1998).
-
T. P. Ma, IEEE Trans. Electron Devices 45, 680 (1998).
-
X. Guo and T. P. Ma, IEEE Electron Device Lett. 19, 207 (1998).
-
D. R. Lee, G. Lucovsky, M. R. Denker, and C. Magee, J. Vac. Sci. Technol. A 13, 607 (1995); D. R. Lee, C. R. Parker, J. R. Hauser, and G. Lucovsky, J. Vac. Sci. Technol. B 13, 1778 (1995).
-
M. L. Green, D. Brasen, K. W. Evens-Lutterodt, L. C. Feldman, K. Krisch, W. Lennard, H. T. Tang, L. Manchanda, and M. T. Tang, Appl. Phys. Lett. 65, 848 (1994).
-
J. Ahn, J. Kim, G. Q. Lo, and D.-L. Kwong, Appl. Phys. Lett. 60, 2089 (1992).
-
H. Niimi and G. Lucovsky, Proceedings of the 1998 International Conference on Characterization and Metrology for ULSI Technology, D. G. Seiler, A. C. Diebold, W. M. Bullis, T. J. Shaffner, R. McDonald, and E. J. Walters, Eds., The American Institute of Physics, Woodbury, NY, 1998, p. 273.
-
Y. Ma, T. Yasuda, and G. Lucovsky, J. Vac. Sci. Technol. A 11, 952 (1993); Y. Ma, T. Yasuda, S. Habermehl, and G. Lucovsky, J. Vac. Sci. Technol. B 11, 1533 (1993); Y. Ma and G. Lucovsky, J. Vac. Sci. Technol. B 12, 2504 (1994).
-
S. V. Hattangady, H. Niimi, and G. Lucovsky, Appl. Phys. Lett. 66, 3495 (1995); S. V. Hattangady, R. Kraft, D. T. Grider, M. A. Douglas, G. A. Brown, P. A. Tiner, J. W. Kuehne, P. E. Nicollian, and M. F. Pas, IEDM Tech. Digest, p. 495 (1996).
-
Y. Wu and G. Lucovsky, Proceedings of the 1998 International Conference on Characterization and Metrology for ULSI Technology, D. G. Seiler, A. C. Diebold, W. M. Bullis, T. J. Shaffner, R. McDonald, and E. J. Walters, Eds., The American Institute of Physics, Woodbury, NY, 1998, p. 288.
-
C. R. Parker, G. Lucovsky, and J. R. Hauser, IEEE Electron Device Lett. 19, 106 (1998).
-
Y. Wu and G. Lucovsky, IEEE Electron Device Lett. 19, 367 (1998).
-
K. Koh, H. Niimi, G. Lucovsky, and M. L. Green, Jpn. J. Appl. Phys. 37, 709 (1998).
-
G. Lucovsky, S. S. Kim, D. V. Tsu, G. G. Fountain, and R. J. Markunas, J. Vac. Sci. Technol. B 7, 861 (1989).
-
S. S. Kim and G. Lucovsky, J. Vac. Sci. Technol. A 8, 2039 (1990).
-
T. Yasuda, Y. Ma, S. Habermehl, and G. Lucovsky, Appl. Phys. Lett. 60, 434 (1992).
-
E. H. Nicollian and A. Reisman, J. Electron. Mater. 17, 213 (1988).
-
P. Thanikasalam, T. K. Whidden, and D. K. Ferry, J. Vac. Sci. Technol. B 14, 2840 (1996).
-
Y. Ma, T. Yasuda, and G. Lucovsky, Mater. Res. Soc. Symp. Proc. 303, 325 (1993).
-
G. Lucovsky, A. Banerjee, B. Hinds, B. Claflin, K. Koh, and H. Yang, J. Vac. Sci. Technol. B 15, 1074 (1997).
-
B. C. Smith and H. H. Lamb, J. Appl. Phys. 83, 7635 (1998).
-
C. H. Bjorkman, C. E. Shearon, Jr., Y. Ma, T. Yasuda, G. Lucovsky, U. Emmerichs, C. Meyer, K. Leo, and H. Kurz, J. Vac. Sci. Technol. A 11, 964 (1993); C. H. Bjorkman, T. Yasuda, C. E. Shearon, Jr., U. Emmerichs, C. Meyer, K. Leo, and H. Kurz, J. Vac. Sci. Technol. B 11, 1521 (1993).
-
H. Niimi, Ph.D. Thesis, Department of Materials Science and Engineering, North Carolina State University, Raleigh, 1998.
-
G. Lucovsky, Y. Ma, S. S. He, T. Yasuda, D. J. Stephens, and S. Habermehl, Mater. Res. Soc. Symp. Proc. 284, 34 (1993); G. Lucovsky, S. S. He, M. J. Williams, and D. Stephens, Microelectron. Eng. 25, 329 (1994) and references therein.
-
G. Lucovsky and J. C. Phillips, J. Non-Cryst. Solids 227, 1221 (1998), and references therein.
-
Y. Ma, T. Yasuda, and G. Lucovsky, Appl. Phys. Lett. 64, 2226 (1994).
-
C. J. Parker, Ph.D. Thesis, Department of Electrical and Computer Engineering, North Carolina State University, Raleigh, 1998.
-
Y. Wu and G. Lucovsky, Proceedings of the IEEE International Reliability Physics Symposium, 1998, p. 70.
-
C. C. Chang, Surf. Sci. 48, 9 (1975).
-
S. Lo, D. Buchanan, Y. Taur, and W. Wang, IEEE Electron Device Lett. 18, 209 (1997).
-
L. Han, D. Wristers, J. Yan, M. Bhat, and D. Kwong, IEEE Electron Device Lett. 16, 319 (1995).
-
R. Fair, IEEE Electron Device Lett. 18, 244 (1997).
-
S. Wolf, in Silicon Procession for the VLSI Era, Vol. 3, Lattice Press, Sunset Beach, CA, 1995, p. 311.
-
J. Pfiester and F. Baker, IEEE Electron Device Lett. 11, 247 (1990).
-
G. Lucovsky, Y. Wu, H. Niimi, V. Misra, and J. C. Phillips, Appl. Phys. Lett. 74, 2005 (1999).
-
The National Technology Roadmap for Semiconductors, Semiconductor Industry Association, San Jose, CA, 1997.
-
B. Claflin, M. Binger, and G. Lucovsky, J. Vac. Sci. Technol. A 16, 1757 (1998).
-
G. Lucovsky, J. Vac. Sci. Technol. A 16, 356 (1998). 45. H. Niimi and G. Lucovsky, J. Vac. Sci. Technol. B 17 (1999), in press.
|
 |
|
|