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IBM Journal of Research and Development  
Volume 43, Number 3, 1999
Ultrathin dielectric films
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Ultrathin nitrided gate dielectrics: Plasma processing, chemical characterization, performance, and reliability - Author bio

by G. Lucovsky

Biographical sketches of authors

Gerald Lucovsky   Departments of Physics, Electrical and Computer Engineering, and Materials Science and Engineering, North Carolina State University, Raleigh, North Carolina 27695 (gerry_lucovsky@ncsu.edu). Dr. Lucovsky received his B.Sc. and M.A. degrees in physics from the University of Rochester, New York, in 1956 and 1958, respectively. In 1960 he received his Ph.D. in physics from Temple University, Philadelphia, Pennsylvania. He spent 21 years in industry, working at the Philco Corporation Research Laboratories in Philadelphia and Blue Bell, Pennsylvania, from 1958 through 1965, and at the Xerox Corporation Research Centers in Webster, New York, and Palo Alto, California, from 1965 through 1979. Currently Dr. Lucovsky is a University Professor of Physics at North Carolina State University in Raleigh, where his research activities include deposition and characterization of the thin films for semiconductor device applications, with a focus on low-temperature, low-thermal-budget processing for advanced silicon and compound semiconductor devices.