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IBM Journal of Research and Development  
Volume 43, Number 3, 1999
Ultrathin dielectric films
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(Ba,Sr)TiO3 dielectrics for future stacked- capacitor DRAM - References

by D. E. Kotecki, J. D. Baniecki, H. Shen, R. B. Laibowitz, K. L. Saenger, J. J. Lian, T. M. Shaw, S. D. Athavale, C. Cabral, Jr., P. R. Duncombe, M. Gutsche, G. Kunkel, Y.-J. Park, Y.-Y. Wang and R. Wise

References

  1. The National Technology Roadmap for Semiconductors, Semiconductor Industry Association, San Jose, CA, 1997.
  2. C. W. Teng, "DRAM Technology Trend," Proceedings of the 1995 International Symposium on VLSI Technology, Systems, and Applications, 1995, p. 295.
  3. E. P. Gusev, H.-C. Lu, E. L. Garfunkel, T. Gustafsson, and M. L. Green, "Growth and Characterization of Ultrathin Nitrided Silicon Oxide Films," IBM J. Res. Develop. 43, 265 (1999, this issue).
  4. D. A. Buchanan, "Scaling the Gate Dielectric: Materials, Integration, and Reliability," IBM J. Res. Develop. 43, 245 (1999, this issue).
  5. P. C. Fazan, U.S. Patent 5,478,772, December 26, 1995; G. S. Sandhu and P. C. Fazan, U.S. Patent 5,506,166, April 9, 1996.
  6. Y. Nishioka, S. R. Summerfelt, K. Park, and P. Bhattacharya, U.S.
    7. Patent 5,656,852, August 12, 1997.
  7. P. C. McIntyre and S. R. Summerfelt, "Kinetics and Mechanisms of TiN Oxidation Beneath Pt Thin Films," J. Appl. Phys. 82, 4577 (1997).
  8. S. R. Summerfelt, U.S. Patent 5,504,041, April 2, 1996.
  9. K. L. Saenger, A. Grill, and D. E. Kotecki, "Oxygen-Induced Inhibition of Noble Metal Silicide Formation: Implications for Electrode/Barrier Structures Used with Perovskite Materials," Mater. Res. Soc. Symp. Proc. 493, 143 (1998).
  10. T. Hara, M. Tanaka, K. Sakiyama, S. Onishi, K. Ishihara, and J. Kudo, "Barrier Properties for Oxygen Diffusion in a TaSiN Layer," Jpn. J. Appl. Phys. 36(Part 2), L893 (1997).
  11. T. Hara, T. Kitamura, M. Tanaka, T. Kobayashi, K. Sakiyama, S. Onishi, K. Ishihara, J. Kudo, Y. Kino, and N. Yamashita, "Barrier Effect of TaSiN Layer for Oxygen Diffusion," J. Electrochem. Soc. 143, L264 (1996).
  12. P. D. Agnello, C. Cabral, Jr., A. Grill, C. V. Jahnes, T. J. Licata, and R. A. Roy, U.S. Patent 5,576,579, November 19, 1996; A. Grill, C. Jahnes, and C. Cabral, Jr., "Layered TaSiN as an Oxidation Resistant Electrically Conductive Barrier," J. Mater. Res. 14, 1604 (1999).
  13. S. M. Bilodeau, R. Carl, P. VanBuskirk, and J. Ward, "MOCVD BaSrTiO3 for 1-Gbit DRAMs," Solid State Technol. 40, 235 (1997).
  14. H. Shen, D. E. Kotecki, R. J. Murphy, M. Zaitz, R. B. Laibowitz, T. M. Shaw, K. L. Saenger, J. Baniecki, G. Beitel, V. Kueppel, and H. Cerva, "Microstructural Control of (Ba,Sr)TiO3 Films for Gigabit DRAM Application," Mater. Res. Soc. Symp. Proc. 493, 33 (1997).
  15. M. H. Frey, Z. Xu, P. Han, and D. A. Payne, "The Role of Interfaces on Apparent Grain Size Effect on the Dielectric Properties for Ferroelectric Barium Titanate Ceramics," Ferroelect. 206, 337 (1998).
  16. R. Waser and M. Klee, "Undoped and Doped Perovskite Films: Sol Gel Processing and Characterization," Integr. Ferroelect. 2, 23-40 (1992).
  17. T. M. Shaw, R. B. Laibowitz, J. D. Baniecki, M. Copel, P. R. Duncombe, H. Shen, and D. E. Kotecki, "The Effect of Electrode and Grain Boundary Interfaces on the Properties of Barium Strontium Titanate Thin Films," Proceedings of the U.S.-Japan Workshop on Electrically Active Interfaces, March 17, 1998, pp. 57-60.
  18. M. Copel, P. R. Duncombe, D. A. Neumayer, T. M. Shaw, and R. M. Tromp, "Metallization Induced Band Bending of SrTiO3 (100) and Ba0.7Sr0.3TiO3," Appl. Phys. Lett. 70, 3227 (1997).
  19. R. Waser, "Dielectric Analysis of Integrated Ceramic Thin Film Capacitors," Integr. Ferroelect. 15, 39-51 (1997).
  20. C. Basceri, S. K. Streiffer, A. I. Kingon, and R. Waser, "The Dielectric Response as a Function of Temperature and Film Thickness of Fiber-Textured (Ba,Sr)TiO3 Thin Films Grown by Chemical Vapor Deposition," J. Appl. Phys. 82, 2497 (1997).
  21. S. K. Streifer, C. Basceri, C. B. Parker, S. E. Lash, J. Christman, H. Maiwa, and A. I. Kingon, "The Influence of Strain on the Dielectric Behavior of (Ba,Sr)TiO3 Thin Films Grown by LS-MOCVD on Pt/SiO2/Si," Proceedings of the International Symposium on the Application of Ferroelectrics, in press, 1999.
  22. S. Hoffmann and Rainer Waser, "Curie-Weiss Law of (Ba1-x,Srx)TiO3 Thin Films Prepared by Chemical Solution Deposition," presented at the Second European Meeting on Integrated Ferroelectrics, EMIF2, September 29-30, 1997.
  23. C. Zhou and D. M. Newns, "Intrinsic Dead Layer Effect and the Performance of Ferroelectric Thin Film Capacitors," J. Appl. Phys. 82, 3081 (1997).
  24. G. Rupprecht, R. O. Bell, and B. D. Silverman, "Nonlinearity and Microwave Losses in Cubic Strontium-Titanate," Phys. Rev. 123, 97 (1961).
  25. S. K. Streiffer, C. Basceri, A. I. Kingon, S. Lipa, S. Bilodeau, R. Carl, and P. C. van Buskirk, "Dielectric Behavior of CVD (Ba,Sr)TiO3 Thin Films on Pt/Si," Mater. Res. Soc. Symp. Proc. 415, 219 (1996).
  26. J. D. Baniecki, R. B. Laibowitz, T. M. Shaw, P. R. Duncombe, D. A. Neumayer, D. E. Kotecki, H. Shen, and Q. Y. Ma, "Dielectric Relaxation of Ba0.7Sr0.3TiO3 Thin Films from 1 mHz to 20 GHz," Appl. Phys. Lett. 72, 498 (1998).
  27. G. W. Dietz and Rainer Waser, "How to Analyze Relaxation and Leakage Currents of Dielectric Thin Films: Simulation of Voltage-Step and Voltage-Ramp Techniques," Integr. Ferroelect. 10, 39-51 (1995).
  28. A. K. Jonscher, Dielectric Relaxation in Solids, Chelsea Dielectrics Press, London, 1983.
  29. T. Horikawa, T. Makita, T. Kuroiwa, and N. Mikami, "3 Thin Films," Extended Abstracts, 7th U.S.-Japan Seminar on Dielectric and Piezoelectric Ceramics, 1995, pp. 24-27.
  30. J. D. Baniecki, R. B. Laibowitz, T. M. Shaw, P. R. Duncombe, D. A. Neumayer, D. E. Kotecki, H. Shen, and Q. Y. Ma, "Electrical and Microwave Properties of Mn Implanted (Ba,Sr)TiO3 Thin Films," Mater. Res. Soc. Symp. Proc. 493 (Ferroelectric Thin Films VI), 27-32 (1998).
  31. M. Schumacher and R. Waser, "Curie-von Schweidler Behavior Observed in Ferroelectric Thin Films and Comparison to Superparaelectric Thin Film Materials," Integr. Ferroelect. 22, 109-121 (1998).
  32. J. D. Baniecki, R. B. Laibowitz, T. M. Shaw, K. L. Saenger, P. R. Duncombe, C. Cabral, D. E. Kotecki, H. Shen, J. Lian, and Q. Y. Ma, "Effects of Annealing Conditions on Charge Loss Mechanisms in MOCVD Ba0.7Sr0.3TiO3 Thin Film Capacitors," J. Eur. Ceram. Soc. 19, No. 6-7, 1457 (1999).
  33. N. E. Mott and E. A. Davis, Electronic Processes in Non-Crystalline Materials, Clarendon Press, Oxford, U.K., 1979.
  34. Y. Fukuda, H. Haneda, I. Sakaguchi, K. Numata, K. Aoki, and A. Nishimura, "Dielectric Properties of (Ba,Sr)TiO3 Thin Films and Their Correlation with Oxygen Vacancy Density," Jpn. J. Appl. Phys. 36, Part 2, No. 11B, L1514-L1516 (1997).
  35. J. D. Baniecki, R. B. Laibowitz, T. M. Shaw, P. R. Duncombe, D. E. Kotecki, H. Shen, and Q. Y. Ma, "Nonlinear Dielectric Relaxation of Mn-Doped Polycrystalline (Ba,Sr)TiO3 Thin Films Over the Temperature Range 4.2 K-496 K," Ferroelectric Thin Films VII, Mater. Res. Soc. Symp. Proc., 1998, in press.
  36. W. Dietz, M. Schumacher, R. Waser, S. K. Streiffer, C. Basceri, and A. I. Kingon, "Leakage Currents in Ba0.7Sr0.3TiO3 Thin Films for Ultrahigh-Density Dynamic Random Access Memories," J. Appl. Phys. 82, 2359 (1997).
  37. G. W. Dietz and R. Waser, "Charge Injection into SrTiO3 Thin Films," Thin Solid Films 299, 53-58 (1997).
  38. J. G. Simmons, "Richardson-Schottky Effect in Solids," Phys. Rev. Lett. 15, 967-968 (1965).
  39. S. Zafir, R. E. Jones, B. Jiang, B. White, V. Kaushik, and S. Gillespie, "The Electronic Conduction Mechanism in Barium Strontium Titanate Thin Films," Appl. Phys. Lett. 73, 3533 (1998).
  40. M. Copel, J. D. Baniecki, P. R. Duncombe, D. Kotecki, R. Laibowitz, D. A. Neumayer, and T. M. Shaw, "Compensation Doping of Ba0.7Sr0.3TiO3 Thin Films," Appl. Phys. Lett. 73, 1832 (1998).
  41. W. Hofman, S. Hoffmann, and Rainer Waser, "Dopant Influence on Dielectric Losses, Leakage Behavior and Resistance Degradation of SrTiO3 Thin Films," Thin Solid Films 305, 66 (1997).
  42. R. E. Jones, Jr., P. D. Maniar, A. C. Campbell, R. Moazzami, and C. J. Mogab, "High Permittivity Lead Based Perovskite Dielectrics for DRAM Applications," Integr. Ferroelect. 5, 235 (1994).
  43. T. Horikawa, T. Makita, T. Kuroiwa, and N. Mikami, "Dielectric Relaxation of (Ba,Sr)TiO3 Thin Films," Jpn. J. Appl. Phys. 34, 27 (1995).
  44. K. Numata, Y. Fukuda, K. Aoki, Y. Okuno, and A. Nishimura, "Influence of the Relaxation Current in Ba0.7Sr0.3TiO3 Thin Film Capacitors on DRAM Operation," IEICE Trans. Electron. E80-C, 1043 (1997).
  45. K. Numata, Y. Fukuda, K. Aoki, and A. Nishimura, "Analysis of Resistance Degradation of SrTiO3 and BaxSr1-xTiO3 Thin Films," Jpn. J. Appl. Phys. 34, 5425 (1995).
  46. C. Basceri, S. E. Lash, C. B. Parker, S. K. Streiffer, A. I. Kingon, M. Grossmann, M. Hoffmann, M. Schumacher, R. Waser, S. Bilodeau, R. Carl, P. C. Van Buskirk, and S. R. Summerfelt, "An Important Failure Mechanism in MOCVD (Ba,Sr)TiO3 Thin Films: Resistance Degradation," Mater. Res. Soc. Symp. Proc. 493, 9 (1998).
  47. T. Horikawa, T. Kawahara, M. Yamamuka, and K. Ono, "Degradation in (Ba,Sr)TiO3 Thin Films Under DC and Dynamic Stress Conditions," Proceedings of the 35th Annual IEEE International Reliability Physics Symposium, 1997, pp. 82-89.
  48. R. Waser, T. Baiatu, and K.-H. Hardtl, "DC Electrical Degradation of Perovskite-Type Titanates: I, Ceramics," J. Amer. Ceram. Soc. 73, 1645-1653 (1990).
  49. R. Waser, T. Baiatu, and K.-H. Hardtl, "DC Electrical Degradation of Perovskite-Type Titanates: II, Single Crystals," J. Amer. Ceram. Soc. 73, 1654-1662 (1990).
  50. T. Baiatu, R. Waser, and K.-H. Hardtl, "DC Electrical Degradation of Perovskite-Type Titanates: III, A Model of the Mechanism, Ceramics," J. Amer. Ceram. Soc. 73, 1663-1673 (1990).
  51. M. P. Harmer, Y. H. Hu, M. Lai, and D. M. Smyth, "The Effects of Composition and Microstructure on Electrical Degradation in BaTiO3," Ferroelect. 49, 71-74 (1983).
  52. H. Neumann and G. Arlt, "Maxwell-Wagner Relaxation and Degradation of SrTiO3 and BaTiO3 Ceramics," Ferroelect. 69, 179-186 (1986).
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