Biographical sketches of authors
David E. Kotecki
IBM Microelectronics Division, East Fishkill facility, Route 52, Hopewell Junction, New York 12533 (kotecki@us.ibm.com).
Dr. Kotecki is a Senior Engineer in the IBM Microelectronics Division at Hopewell Junction, New York. He joined IBM in 1988 after receiving a Ph.D. in applied science from the University of California at Davis. He is a member of the Process Integration Department in the IBM/Siemens DRAM Development Alliance, working in the area of high-dielectric-constant materials for stacked-capacitor DRAM. Dr. Kotecki has received 14 Invention Achievement Awards from IBM, holds 23 U.S. patents, and has authored or coauthored more than 40 publications.
John D. Baniecki
Columbia University, New York, New York 10027 and IBM Thomas J. Watson Research Center, P.O. Box 218, Yorktown Heights, New York 10598 (baniecki@us.ibm.com).
Mr. Baniecki is a Ph.D. candidate in the Department of Electrical Engineering at Columbia University, where he is involved in a joint research project on the development of high-dielectric-constant thin films for DRAM applications at the IBM Thomas J. Watson Research Center in Yorktown Heights, New York. He received his B.S. in physics from Purdue University in 1991, his M.S. in physics from Northeastern University in 1993, and his M. Phil. in electrical engineering from Columbia University in 1998. His research interests include the physics and modeling of high-permittivity thin films for use in integrated-circuit memories. He has authored or coauthored more than a dozen papers and is a member of the IEEE and Materials Research Society.
Hua Shen
Siemens Microelectronics Inc., Route 52, Hopewell Junction, New York 12533 (hshen@dda.siemens.com).
Dr. Shen is a Senior Engineer at Siemens Microelectronics Inc. He received an M.S. in applied science from Yale University in 1991 and a Ph.D. in materials engineering from the Massachusetts Institute of Technology in 1995. He has published 14 papers and filed nine patents in the areas of semiconductor technology and materials processing. Currently he is a member of the Gigabit Integration group in the IBM/Siemens DRAM Development Alliance.
Robert B. Laibowitz
IBM Research Division, Thomas J. Watson Research Center, P.O. Box 218, Yorktown Heights, New York 10598 (laibow@us.ibm.com).
Dr. Laibowitz is a Research Staff Member at the Thomas J. Watson Research Center. He received his B.A. from Columbia College in 1959, his B.S. and M.S. in electrical engineering from Columbia University in 1960 and 1963, and the Ph.D. in applied physics from Cornell University in 1967. During 1975 he was on assignment at the IBM Zurich Laboratory, where he worked on Josephson effects and other tunneling projects. He has been an Adjunct Professor at Stevens Institute of Technology and Columbia University and is a Fellow of the American Physical Society and a Senior Member of the IEEE. Dr. Laibowitz has worked extensively on applications of both high- and low-transition-temperature superconductivity, metal-oxide-semiconductor effects, nanostructures, percolation, and the fractal nature of ultrathin films. His present efforts concern the development and utilization of perovskite-based, high-dielectric-constant thin films for DRAM and other storage projects.
Katherine L. Saenger
IBM Research Division, Thomas J. Watson Research Center, P.O. Box 218, Yorktown Heights, New York 10598 (saenger@watson.ibm.com).
Dr. Saenger has been at the Thomas J. Watson Research Center since 1983, and is currently a Research Staff Member in the Electronic Materials and Structures group. She received an A.B. degree in physics from Barnard College in 1975 and a Ph.D. in chemical physics from Harvard University in 1981. At IBM she has worked in the areas of optical emission diagnostics of processing plasmas, pulsed laser deposition, and titanium silicide formation. Her current research is directed toward finding electrodes and barrier materials for use with novel ferroelectric and high-epsilon perovskites. Dr. Saenger has authored or coauthored several dozen papers, and she holds nine patents.
Jingyu Jenny Lian
Siemens Microelectronics Inc., Route 52, Hopewell Junction, New York 12533 (jlian@dda.siemens.com).
Dr. Lian is a Development Engineer at Siemens Microelectronics Inc. and a member of the IBM/Siemens DRAM Development Alliance. She received her Ph.D. in electrical engineering from Kyoto University, Japan, in 1991 for a study of the electrical properties of ferroelectric phase transition. Dr. Lian received an M.S. in materials science and engineering from the Chinese Academy of Science in China in 1985 and a B.S. in chemistry and inorganic materials engineering from Shanghai University of Science and Technology in 1982. Prior to joining Siemens, she was an Adjunct Professor at the University of Cincinnati. Before that, she was a research member of the TDK Corporation R&D Center in Japan. Her work currently is focused on the development of high-dielectric-constant film for DRAM applications.
Thomas M. Shaw
IBM Research Division, Thomas J. Watson Research Center, P.O. Box 218, Yorktown Heights, New York 10598 (tmshaw@us.ibm.com).
Dr. Shaw is a Research Staff Member at the IBM Thomas J. Watson Research Center, working in the field of materials science. He received a B.Eng. in metallurgy and materials science from the University of Liverpool in 1975 and a Ph.D. in materials science from the University of California at Berkeley in 1981. In 1984 he joined IBM at the Thomas J. Watson Research Center to work in the Physical Sciences Department. While at IBM he has worked on understanding how the physical properties of ceramic and metals can be controlled through processing. Recent interests include studies of the properties of high-dielectric-constant and ferroelectric thin films and of failure mechanisms in chip interconnects. Dr. Shaw is a Fellow of the American Ceramics Society.
Satish D. Athavale
IBM Microelectronics Division, Route 52, Hopewell Junction, New York 12533 (sathaval@us.ibm.com).
Dr. Athavale is a Development Engineer in the IBM Microelectronics Division and a member of the Plasma Etch group in the IBM/Siemens DRAM Development Alliance. He is currently working on plasma etching of noble-metal-electrode materials for stacked-capacitor DRAM. Prior to joining IBM, he worked as a Senior Process Engineer in the technology development and process engineering area at Tegal Corporation in Petaluma, California. Dr. Athavale received his Ph.D. in chemical engineering from the University of Houston, where he worked on plasma etching and CVD. He holds an M.S. degree in chemical engineering from Syracuse University and was a gold medalist at the University of Bombay, where he graduated with a bachelor's degree in chemical engineering. Dr. Athavale has authored or coauthored several technical papers. He is currently pursuing an M.B.A. at the Stern School of Business of New York University.
Cyril Cabral, Jr.
IBM Thomas J. Watson Research Center, P.O. Box 218, Yorktown Heights, New York 10598 (cabral@watson.ibm.com).
Mr. Cabral is an Advisory Engineer at the IBM Thomas J. Watson Research Center in Yorktown Heights, New York. Mr. Cabral received his M.S.E.E. degree from Polytechnic University, Brooklyn, New York, in 1992 and his B.S.E.E. degree from Manhattan College, Riverdale, New York, in 1989. He received a B.S. degree in physics/ mathematics from Pace University, Pleasantville, New York, in 1988. Mr. Cabral joined IBM in 1989 as an engineer in the Thin Film Metallurgy and Interconnections group in the Silicon Technology Department. His focus has been in the area of silicides (metal/silicon reactions) used for contacts to CMOS devices, diffusion barriers (metallic thin films used to prevent interdiffusion of materials), intermetallic reactions, and copper interconnect technology. Mr. Cabral holds 15 U.S. patents and is first author of eleven publications and coauthor of more than fifty additional publications.
Peter R. Duncombe
IBM Thomas J. Watson Research Center, P.O. Box 218, Yorktown Heights, New York 10598 (prd@us.ibm.com).
Mr. Duncombe is a Senior Associate Engineer in the Exploratory Silicon Science and Technology Department at the IBM Thomas J. Watson Research Center, working on thin-film materials and processes for DRAM, MRAM, NVFRAM, and other applications of ferroelectric and high-permittivity ceramics and low-k dielectrics. Since joining IBM in 1985, he has worked on sintering, superconductivity, GMR, and ceramic packaging. Mr. Duncombe received a Research Division Award for his contributions to the glass ceramic composite via in 1992 and a Third Plateau Invention Achievement Award in 1998. He received a B.A. in chemistry from SUNY New Paltz in 1980 and an M.S. in chemical engineering from SUNY Buffalo in 1983. Mr. Duncombe is a member of the American Chemical Society.
Martin Gutsche
Siemens Perlach, Geb. 10723, Otto-Hahn-Ring 6, 81739 Munich, Germany (Martin.Gutsche@siemens-scg.com).
Dr. Gutsche is a member of the research and development group at the Siemens semiconductor facility in Munich-Perlach, Germany. His current responsibilities include the development and characterization of new semiconductor materials and processes. From 1996 to 1998 he was a process engineer with Siemens Microelectronics in Hopewell Junction, New York, and a member of the IBM/Siemens DRAM Development Alliance. During that time, he worked on various dry-etch applications, with a major focus on conventional metal etch and platinum etch. Dr. Gutsche received his Ph.D. in physics from the Technical University of Munich, Germany. He is the author or coauthor of several technical papers.
Gerhard Kunkel
Siemens Microelectronics Inc., Route 52, Hopewell Junction, New York 12533 (gkunkel@dda.siemens.com).
Dr. Kunkel received his degree in physics from the Munich Technical University in 1992. He received his Ph.D. in 1995 from the research center in Juelich, where he worked on fabrications of high-temperature superconducting circuits for high-frequency applications. Since 1997, Dr. Kunkel has worked for the IBM/Siemens DRAM Development Alliance in advanced lithography development for product applications in DRAM memory.
Young-Jin Park
Siemens, Microelectronics Inc., Route 52, Hopewell Junction, New York 12533 (ypark@dda.siemens.com).
Dr. Park is a Lead Engineer at Siemens Microelectronics Inc. He received M.S. and Ph.D. degrees in materials science from KAIST (Korea Advanced Institute of Science and Technology) in 1987 and 1990, respectively. From 1990 to 1997, he worked in the Memory R&D Division at Hyundai Electronics Ind. Co., Ltd., as a principal technical staff and section manager. At the end of 1997 he joined Siemens Microelectronics Inc., as a member of the Process Integration Department in the IBM/Siemens DDA (DRAM Development Alliance). Dr. Park is currently working in the area of stacked-capacitor development with high-dielectric-constant materials.
Yun-Yu Wang
IBM Microelectronics Division, Route 52, Hopewell Junction, New York 12533 (wangyy@us.ibm.com).
Dr. Wang received a Ph.D. in physics from the Virginia Polytechnic Institute and State University in 1990. He spent two years as a Research Associate in the Physiology Department at the University of Virginia. From 1992 to 1996, Dr. Wang was a Research Associate in the Materials Science and Engineering Department at Northwestern University. He is currently an Advisory Engineer in the Analytical Department of the Microelectronics Division at IBM.
Richard Wise
IBM Microelectronics Division, East Fishkill facility, Route 52, Hopewell Junction, New York 12533 (richwise@us.ibm.com).
Dr. Wise is a Development Engineer with the IBM Microelectronics Division in Hopewell Junction, New York. He joined the IBM/Siemens DRAM Development Alliance in July 1996 and currently works in the Dry Etch Department. His primary responsibility is dielectric etching, with a major focus on the application of high-density-plasma tools. Dr. Wise received his Ph.D. in chemical engineering from the University of Houston, where he studied plasma diagnostics and simulation.
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