Biographical sketches of authors
Evgeni P. Gusev
IBM Research Division, Thomas J. Watson Research Center and Semiconductor Research and Development Center, P.O. Box 218, Yorktown Heights, New York 10598 (gusev@us.ibm.com).
Dr. Gusev received his M.S. degree in molecular physics (1988) and his Ph.D. in solid-state physics (1992) from the Moscow Engineering Physics Institute (MEPhI). From 1988 to 1992, he worked at MEPhI as a Research Associate. From 1993 to 1998, he was a Research Associate and then Research Assistant Professor at the Laboratory for Surface Modification at Rutgers University. In 1997, he was a Visiting Professor at the Research Center for Nanodevices and Systems, Hiroshima University, Japan. Dr. Gusev is currently a member of the Advanced Gate Dielectrics group at the IBM Thomas J. Watson Research Center. His research areas include experimental and theoretical aspects of surface and thin-film science, materials science, semiconductor physics, and physical and chemical kinetics. Dr. Gusev is a member of the American Vacuum Society, the American Physical Society, and the Electrochemical Society.
Hsu-Chang Lu
Department of Physics and Laboratory for Surface Modification, Rutgers University, Piscataway, New Jersey 08854 (hclu@physics.rutgers.edu).
Dr. Lu received his B.S. degree in physics in 1988 from the National Taiwan University in Taipei, Taiwan. He received his M.S. and Ph.D. degrees in physics at Rutgers University in 1995 and 1997, respectively. He has been a postdoctoral research associate at Rutgers since 1997, working on ultrathin-gate dielectrics using medium-energy ion scattering.
Eric L. Garfunkel
Department of Chemistry and Laboratory for Surface Modification, Rutgers University, Piscataway, New Jersey 08854 (garf@rutchem.rutgers.edu).
Prof. G arfunkel received his B.S. degree from Haverford College in 1978 and his Ph.D. in 1983 at U.C. Berkeley with Prof. G. A. Somorjai. From 1983 to 1984 he worked in France as an NSF-CNRS Exchange Scholar at the University of Paris-Sud, Orsay, and in China as an NAS Fellow at Fudan University. Since September 1984, he has worked as an Assistant, Associate, and now full Professor of Chemistry at Rutgers University. He has also had visiting positions at the Ruhr Universitat (Bochum), at the BESSY synchrotron facility (Berlin), at the Univ. of Paris-VII, and at the Instituto Degli Studio (Florence, Italy). At Rutgers, Prof. G arfunkel's research has included studies of molecular and metal adsorption and reaction, thin-film growth, interface structure, and oxidation. He uses electron spectroscopy, ion scattering, scanning probe microscopies (STM and AFM), and other surface science and thin-film methods. One project involves studies of silicon oxidation, oxynitridation, and the growth of higher-dielectric-constant materials for gate dielectric applications. He is interested in questions of growth mechanism, interface and film structure, and device properties. Other projects include structural and thermochemical aspects of metallization, and studies of the polymer-metal interface.
Torgny Gustafsson
Department of Physics and Laboratory for Surface Modification, Rutgers University, Piscataway, New Jersey 08854 (gustaf@physics.rutgers.edu).
Dr. G ustafsson received M.Sc. and Ph.D. degrees from Chalmers University of Technology, Goteborg, Sweden, in 1970 and 1973. He was a Research Associate, Assistant Professor, Associate Professor, and Professor of Physics at the University of Pennsylvania from 1974 to 1987. Since 1987, he has been a Professor (II) of Physics at Rutgers University. He has held visiting positions at the University of Wisconsin (1977), Stanford University and Xerox PARC (1978), Chalmers University (1979), and the FOM Institute, Amsterdam (1985). Dr. Gustafsson was awarded The Nottingham Prize (Physical Electronics Conference, 1974) and an Alfred P. Sloan Foundation Fellowship (1978-1982). He is a Fellow of the American Physical Society.
Martin L. Green
Bell Laboratories/Lucent Technologies, Murray Hill, New Jersey 07974 (mlg@lucent.com).
Dr. Green received B.S. and M.S. degrees in metallurgy in 1970 and 1972, respectively, from the Polytechnic Institute of Brooklyn. He was the Climax Molybdenum Fellow at MIT from 1974 to 1978, receiving his Ph.D. in materials science there in 1978. In 1977, he was a Kurtz Memorial Fellow at the Technion in Israel. He has been with Bell Laboratories since 1978, working in the fields of phase transformations, magnetic materials, ordered alloys, CVD metal films for ULSI, SiGe heteroepitaxy, and, most recently, ultrathin-gate dielectrics. He is a member of the Metallurgical Society, the Materials Research Society, and the Electrochemical Society.
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