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IBM Journal of Research and Development  
Volume 43, Number 3, 1999
Ultrathin dielectric films
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Titanium dioxide (TiO2)-based gate insulators - References

by S. A. Campbell, H.-S. Kim, D. C. Gilmer, B. He, T. Ma and W. L. Gladfelter.

References

  1. The National Technology Roadmap for Semiconductors--Technology Needs, Semiconductor Industry Association, San Jose, CA, 1997.
  2. B. Brar, G. D. Wilk, and A. C. Seaburgh, "Direct Extraction of the Electron Tunneling Effective Mass in Ultrathin SiO2," Appl. Phys. Lett. 69, 2728 (1996).
  3. D. A. Buchanan and S.-H. Lo, "Growth, Characterization and the Limits of Ultrathin SiO2 Based Dielectrics for Future CMOS Applications," The Physics and Chemistry of SiO2 and the Si-SiO2 Interface--III, H. Z. Massoud, E. H. Poindexter, and C. R. Helms, Eds., The Electrochemical Society, Pennington, NJ, 1996, p. 3.
  4. S. A. Campbell, D. C. Gilmer, X. Wang, M. T. Hsieh, H. S. Kim, W. L. Gladfelter, and J. H. Yan, "MOSFET Transistors Fabricated with High Permittivity TiO2 Dielectrics," IEEE Trans. Electron Devices 44, 104 (1997).
  5. T. Fuyuki and H. Matsunami, "Electronic Properties of the Interface Between Si and TiO2 Deposited at Very Low Temperatures," Jpn. J. Appl. Phys. 25, 1288 (1986).
  6. N. Rausch and E. P. Burte, "Thin High-Dielectric TiO2 Films Prepared by Low Pressure MOCVD," Engineering 19, 725 (1992).
  7. N. Rausch and E. P. Burte, "Thin TiO2 Films Prepared by Low Pressure Chemical Vapor Deposition," J. Electrochem. Soc. 140, 145 (1993).
  8. W. D. Brown and W. W. Grannemann, "C-V Characteristics of Metal-Titanium Dioxide-Silicon Capacitors," Solid State Electron. 21, 837 (1978).
  9. J. Yan, D. C. Gilmer, S. A. Campbell, W. L. Gladfelter, and P. G. Schmid, "Structural and Electrical Characterization of TiO2 Grown from Titanium Tetrakis-Isopropoxide (TTIP) and TTIP/H2O Ambients," J. Vac. Sci. Technol. B 14, 1706 (1996).
  10. D. G. Columbo, D. C. Gilmer, V. G. Young, S. A. Campbell, and W. L. Gladfelter, "Anhydrous Metal Nitrides as Volatile Single Source Precursors for the Chemical Vapor Deposition of Metal Oxide Films," Chem. Vap. Deposition 4, 220 (1998).
  11. For example, G. B. Stringfellow, Organometallic Vapor-Phase Epitaxy, Academic Press, San Diego, CA, 1989.
  12. H. S. Kim, S. A. Campbell, and D. C. Gilmer, "Charge Trapping and Degradation in High-Permittivity TiO2 Dielectric Films," IEEE Electron Device Lett. 18, 465 (1997).
  13. J. Frenkel, "On the Theory of Electrical Breakdown of Dielectrics and Electronic Semiconductors," Tech. Phys. USSR 5, 685 (1938).
  14. W. Schottky, "Halbleitertheorie der Sperrschicht," Naturwissenschaften 26, 843 (1938).
  15. J. Pascual, J. Camassel, and H. Mathieu, "Fine Structure in the Intrinsic Absorption Edge of TiO2," Phys. Rev. B 18, 5606 (1978).
  16. G. Klimeck, R. K. Lake, R. Ch. Bowen, Ch. L. Fernando, and W. R. Frensley, "Resolution of Resonances in a General Purpose Quantum Device Simulator (NEMO)," VLSI Design 6, 107 (1998).
  17. R. Lake, G. Klimeck, R. C. Bowen, C. Fernando, D. Jovanovic, D. Blanks, T. S. Moise, and Y. C. Kao, "Experimentally Verified Quantum Device Simulations Based on Multiband Models, Hartree Self-Consistency, and Scattering Assisted Charging," Device Research Conference Digest, IEEE, Piscataway, NJ, 1996, p. 174.

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