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Volume 43, Number 3, 1999
Ultrathin dielectric films |
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Table of contents: HTML PDF ASCII |
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This article: HTML PDF ASCII |
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Key measurements of ultrathin gate dielectric reliability and in-line monitoring - References
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by
W. W. Abadeer,
A. Bagramian,
D. W. Conkle,
C. W. Griffin,
E. Langlois,
B. F. Lloyd,
R. P. Mallette,
J. E. Massucco,
J. M. McKenna,
S. W. Mittl and
P. H. Noel |
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References
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The National Technology Roadmap for Semiconductors: Technology Needs, Semiconductor Industry Association, San Jose, CA, 1997.
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T. Kuroi, S. Shimizu, S. Ogino, A. Teramoto, M. Shirahata, Y. Okumura, and M. Inuishi, "Sub-Quarter-Micron Dual Gate CMOSFETs with Ultrathin Gate Oxide of 2nm," Digest of Technical Papers, Symposium on VLSI Technology, 1996, p. 210.
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A. I. Chou, C. Lin, K. Kumar, P. Chowdhury, M. Gardner, M. Gilmer, J. Fulford, and J. C. Lee, "The Effects of Nitrogen Implant into Gate Electrode on the Characterization of Dual-gate MOSFETs with Ultrathin Oxide and Oxynitrides," Proceedings of the International Reliability Physics Symposium, 1997, p. 174.
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B. Maiti, "Nitrided Oxides in CMOS Technology," International Reliability Physics Symposium (IRPS) Tutorial Proceedings, 1998, Section 3, p. 3.1.
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R. Degraeve, J. L. Ogier, R. Bellens, Ph. Roussel, G. Groeseneken, and H. E. Maes, "On the Field Dependence of Intrinsic and Extrinsic Time-Dependent Dielectric Breakdown," Proceedings of the International Reliability Physics Symposium, 1996, p. 44.
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J. L. Ogier, R. Degraeve, P. Roussel, G. Groeseneken, and H. E. Maes, "Analysis of the Early Failure Rate Prediction of Time-Dependent Dielectric Breakdown in Thin Oxides," Proceedings of the European Solid State Device Research Conference (ESSDERC), 1995, p. 299.
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W. R. Hunter, "A Failure Rate Based Methodology for Determining the Maximum Operating Gate Electric Field, Comprehending Defect Density and Burn-In," Proceedings of the International Reliability Physics Symposium, 1996, p. 37.
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David J. Dumin, Sai K. Mopuri, S. Vanchinathan, R. S. Scott, R. Subramoniam, and Terrill C. Lewis, "High-Field Related Thin Oxide Wearout and Breakdown," IEEE Trans. Electron Devices 42, 760 (1995).
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J. S. Suehle, P. Chaparala, C. Messick, W. M. Miller, and K. C. Boyko, "Field and Temperature Acceleration of Time-Dependent Dielectric Breakdown in Intrinsic Thin SiO2," Proceedings of the International Reliability Physics Symposium, 1994, p. 120.
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Hideki Satake, Shin-ichi Takagi, and Akira Toriumi, "Evidence of Electron-Hole Cooperation in SiO2 Dielectric Breakdown," Proceedings of the International Reliability Physics Symposium, 1997, p. 156.
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C.-F. Chen, C.-Y. Wu, M.-K. Lee, and C.-N. Chen, "The Dielectric Reliability of Intrinsic Thin SiO2 Films Thermally Grown on a Heavily Doped Si Substrate-- Characterization and Modeling," IEEE Trans. Electron Devices ED-34, 1540 (1987).
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R. Degraeve, G. Groeseneken, R. Bellens, M. Depas, and H. E. Maes, "A Consistent Model for the Thickness Dependence of Intrinsic Breakdown in Ultrathin Oxides," Proceedings of the International Electron Devices Meeting, 1995, p. 863.
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R. Degraeve, J. De Blauwe, J. L. Ogier, Ph. Roussel, G. Groeseneken, and H. E. Maes, "A New Polarity Dependence of the Reduced Trap Generation During High-Field Degradation of Nitrided Oxides," Proceedings of the International Electron Devices Meeting, 1996, p. 327.
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J. H. Stathis, "Quantitative Model of the Thickness Dependence of Breakdown in Ultra Thin Oxides," Microelectron. Eng. 36, 325 (1997).
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D. J. Dimaria and J. H. Stathis, "Ultimate Limit for Defect Generation in Ultrathin Silicon Dioxides," Appl. Phys. Lett. 71, 3230 (1997).
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R.-P. Vollertsen and W. W. Abadeer, "Comprehensive Gate-Oxide Reliability Evaluation for DRAM Processes," Microelectron. & Reliabil. 36, 1631 (1996).
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L. Su, S. Subbanna, E. Crabbe, P. Agnello, E. Nowak, R. Schulz, S. Rauch, H. Ng, T. Newmann, A. Ray, M. Hargrove, A. Acovic, J. Snare, S. Crowder, B. Chen, J. Sun, and B. Davari, "A High-Performance 0.8 µm CMOS," Proceedings of the 1996 Symposium on VLSI Technology, 1996, p. 12.
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J. H. Stathis and D. J. DiMaria, "Reliability Projection for Ultrathin Oxides at Low Voltage," Proceedings of the International Electron Devices Meeting, 1998, p. 167.
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A. Berman, "Time-Zero Dielectric Reliability Test by a Ramp Method," Proceedings of the 19th International Reliability Physics Symposium, 1981, pp. 204-209.
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W. Abadeer, W. Cote, A. LeBlanc, M. Levy, R. Vollertsen, H. Akatsu, V. Penka, R. Ludeke, A. Kluwe, P. Schulz, S. Nadahara, A. Antreasyan, and D. Cote, "Advanced Technology Processing and State-of-the-Art Solutions to Cleaning Contamination Control, and Integration Problems," presented at the Spring Meeting of the Materials Research Society, San Francisco, April 17-21, 1995.
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