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IBM Journal of Research and Development  
Volume 43, Numbers 1/2, 1999
Plasma processing
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Surface science issues in plasma etching - Author bios

by G. S. Oehrlein, M. F. Doemling, B. E. E. Kastenmeier, P. J. Matsuo, N. R. Rueger, M.Schaepkens, and T. E. F. M. Standaert

Biographical sketches of authors

Gottlieb S. Oehrlein University at Albany, State University of New York, Albany, New York 12222. Professor Oehrlein received a Ph.D. in physics from the University at Albany in 1981. From 1982 to 1993 he was a Research Staff Member at the IBM Thomas J. Watson Research Center in Yorktown Heights, New York. In September 1993 he joined the faculty of the Department of Physics at the State University of New York (SUNY) at Albany. Professor Oehrlein has published more than 150 papers and contributed significant results on the use of low-temperature plasmas for materials processing. These contributions were recognized with several awards at the IBM Research Division, the 1992 Electronics Division Award of the Electrochemical Society, and, in 1993, the 14th Thinker Award of the Tegal Corporation.

Marcus F. Doemling University at Albany, State University of New York, Albany, New York 12222. Mr. Doemling is working toward his Ph.D. in the Plasma Research Laboratory at SUNY Albany. He received a Vordiplom degree in physics from Wurzburg University in Germany, and in 1995 an M.S. degree in physics from SUNY at Albany. He has worked on high-density plasma etching of materials, especially photoresist. His research is currently focused on reactive ion beam etching (RIBE) to establish fundamental process parameters applicable to plasma-based etching processes.

Bernd E. E. Kastenmeier University at Albany, State University of New York, Albany, New York 12222. Mr. Kastenmeier began his study of physics at the University at Wurzburg, Germany, in 1990. In 1993, after receiving a Vordiplom degree, he began graduate studies in the Physics Department of SUNY at Albany. He received an M.S. degree in physics from SUNY in 1994 and is currently working toward his Ph.D. degree. Mr. Kastenmeier's research activities are centered around the processing of materials using remote plasmas. He has studied the etching mechanism of materials used in integrated-circuit manufacturing in reactive afterglows of microwave discharges, employing surface analytical methods and mass spectrometry. He has also improved the selective stripping of silicon nitride and has investigated the efficiency of different F-containing gases for the cleaning of deposition reactors.

Peter J. Matsuo University at Albany, State University of New York, Albany, New York 12222. Mr. Matsuo received a B.S. in physics and mathematics in 1994 and an M.S. in physics from SUNY at Albany in 1995, after which he joined the Plasma Research Laboratory at SUNY Albany for his doctoral studies. His research has focused on the plasma cleaning of dielectrics and metallization layers. He is currently the author of five published articles and one patent.

Neal R. Rueger University at Albany, State University of New York, Albany, New York 12222. Mr. Rueger has been working at the Plasma Research Laboratory at SUNY at Albany since it was established in late 1993. He received a B.S. from SUNY at Binghamton in 1983, with a major in geophysics. He received an M.S. in physics from SUNY at Albany in 1992, and is currently completing his Ph.D. His areas of research are high-density plasma etching of silicon dioxide, silicon, and photoresist employing inductively coupled plasmas, as well as reactive ion beam etching studies focused on the establishment of the fundamental details of the plasma-etching process.

Marc Schaepkens University at Albany, State University of New York, Albany, New York 12222. Mr. Schaepkens is working toward his Ph.D. degree in physics in the Plasma Research Laboratory of SUNY at Albany. He received an Ingenieur Diploma/M.S. in applied physics from the Eindhoven University of Technology, Netherlands, in 1996, and an M.S. in physics from SUNY Albany in 1997. His primary research projects are the study of the mechanisms underlying selective SiO[SUB]2 etching and the etching of high-aspect-ratio features using inductively coupled fluorocarbon plasmas.

Theodorus E. F. M. Standaert University at Albany, State University of New York, Albany, New York 12222. In 1995 Mr. Standaert joined the Plasma Research Laboratory at SUNY at Albany, where he has been studying the competitive process between fluorocarbon deposition and etching in high-density plasmas. This study completed a four-year education in applied physics, for which he received an Ingenieur (Ir.) degree in 1996 from the Eindhoven University of Technology, Netherlands. As part of his doctoral research, he has been working on the patterning of novel low-K dielectrics and ultranarrow (~20-nm) trenches using high-density plasmas.