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IBM Journal of Research and Development  
Volume 43, Numbers 1/2, 1999
Plasma processing
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Plasma processing in the fabrication of amorphous silicon thin-film-transistor arrays - References

by Y. Kuo, K. Okajima, and M. Takeichi

References

  1. L. E. Antonuk, J. Yorkston, and R. A. Street, "Two-Dimensional, TFT + Sensor Arrays for Medical Imaging," Proceedings of the First Symposium on Thin Film Transistor Technologies, Y. Kuo, Ed., PV 92-24, The Electrochemical Society, Pennington, NJ, 1992, pp. 252-265.
  2. M. Kinugawa, "TFT Cell Technology for High Density SRAMs," Ibid., pp. 145-153.
  3. T. Ozawa, "Key Technologies to Provide High Performance a-Si:H TFT Image Sensor," Ibid., pp. 244-251.
  4. G. Fortunato and A. Pecora, "Application of Metal/Insulator/Hydrogenated Amorphous Silicon Structures to the Field of Chemical Sensors," Proceedings of the Second Symposium on Thin Film Transistor Technologies, Y. Kuo, Ed., PV 94-35, The Electrochemical Society, Pennington, NJ, 1994, pp. 341-355.
  5. D. Horst, E. Lueder, M. Habibi, T. Kallfass, and J. Siegordner, "A Thin Film Retina Addressed by Arrays of TFTs," Ibid., pp. 381-391.
  6. S. G. Burns, H. R. Shanks, A. P. Constant, C. Gruber,D. Schmidt, A. Landin, C. Thielen, F. Olympie,T. Schumacher, and J. Cobbs, "Design and Fabrication of alpha-Si:H-Based EEPROM Cells," Ibid., pp. 370-380.
  7. Y. Kuo, "Plasma Etching and Deposition for a-Si:H Thin Film Transistors," J. Electrochem. Soc. 142, No. 7, 2486 (1995).
  8. K. Hiranaka, T. Yoshimura, and T. Yamaguchi, "Effects of the Deposition Sequence on Amorphous Silicon Thin-Film Transistors," Jpn. J. Appl. Phys. 28, No. 11, 2197 (1989).
  9. Y. Kuo, "A New Process Using Two Masks to Prepare Tri-Layer Thin Film Transistors," J. Electrochem. Soc. 138, No. 2, 637 (1991).
  10. M. Shur and M. Hack, "Physics of Amorphous Silicon Based Alloy Field-Effect Transistors," J. Appl. Phys. 55, 769 (1984).
  11. R. A. Street and M. J. Thompson, "Electronic States at the Hydrogenated Amorphous Silicon/Silicon Nitride Interface," Appl. Phys. Lett. 45, 769 (1984).
  12. M. J. Powell, J. A. Chapman, A. G. Knapp, I. D. French, J. R. Hughes, A. D. Pearson, M. Allinson, M. J. Edwards, R. A. Ford, M. C. Hemings, O. F. Hill, D. H. Nicholls, and N. K. Wright, "Active Matrix-Addressed LC Television Using a-Si Thin Film Transistors," Proceedings of EuroDisplay, Institution of Electrical Engineers, London, 1987, pp. 63-66.
  13. M. Powell, C. van Berkel, A. R. Franklin, S. C. Deane, and W. I. Milne, "Defect Pool in Amorphous-Silicon Thin-Film Transistors," Phys. Rev. B 45, No. 8, 4160 (1992).
  14. J. De Baets, A. Van Calster, A.-M. De Cubber, H. De Smet, and J. Vanfleteren, "Modelling Poly-CdSe TFTs for AMLCD," Proceedings of the Second Symposium on Thin Film Transistor Technologies, Y. Kuo, Ed., The Electrochemical Society, Pennington, NJ, 1994, pp. 228-232.
  15. Y. Kuo, "Large Area Plasma Enhanced Chemical Vapor Deposition of Nonstoichiometric Silicon Nitride," Mater. Res. Soc. Symp. Proc. 282, 623 (1993).
  16. Y. Kuo, "Reactive Ion Etch Damages in Inverted, Staggered, Tri-Layer Thin-Film Transistor," Appl. Phys. Lett. 61, 2790 (1992).
  17. Y. Kuo, "Deposition and Etching Mechanisms in Plasma Thin Film Processes," Application of Particle and Laser Beams in Materials Technology, P. Misaelides, Ed., NATO ASI Series E: Applied Sciences, Vol. 283, Kluwer Academic Publishers, Dordrecht, 1995, pp. 581-593.
  18. J. Robertson and M. J. Powell, "Defect Model of Charge Transfer Doping at a-SiNx:H/a-Si:H Interfaces," J. Non-Cryst. Solids 77/78, 1007 (1985).
  19. Y. Kuo, "Plasma Enhanced Chemical Vapor Deposition of SiNx for Thin Film Transistors," Proceedings of the Twelfth International Symposium on Chemical Vapor Deposition, PV 93-2, The Electrochemical Society, Pennington, NJ, 1993, pp. 350-356.
  20. Y. Kuo, E. C. Paloura, and C. Dziobkowski, "Characterization of PECVD SiNx Process and Material--for TFT Gate Dielectric Applications," Proceedings of the Tenth Symposium on Plasma Processing, G. S. Mathad and D. W. Hess, Eds., PV 94-20, The Electrochemical Society, Pennington, NJ, 1994, pp. 513-524.
  21. Y. Kuo, "PECVD Silicon Nitride as a Gate Dielectric for Amorphous Silicon Thin Film Transistor--Process and Device Performance," J. Electrochem. Soc. 142, No. 1, 186 (1995).
  22. Y. Kuo, "Etch Mechanism in the Low Refractive Index Silicon Nitride Plasma-Enhanced Chemical Vapor Deposition Process," Appl. Phys. Lett. 63, No. 2, 144 (1993).
  23. E. C. Paloura, Y. Kuo, and W. Braun, "On the Effect of Bonded Hydrogen in the Local Microstructure of PECVD SiNx:H Films," Physica B 208 & 209, 562 (1995).
  24. Y. Kuo, "Thin Film Transistors with Graded SiNx Gate Dielectrics," J. Electrochem. Soc. 141, No. 4, 1061 (1994).
  25. Y. Kuo and F. R. Libsch, "a-Si:H TFTs with a Graded Gate SiNxDielectric Structure--Interfacial Layer Thickness Effects and Characterization," Proceedingsof the Second Symposium on Thin Film Transistor Technologies, Y. Kuo, Ed., PV 94-35, The Electrochemical Society, Pennington, NJ, 1994, pp. 41-51.
  26. H. Miki, S. Kawamoto, T. Horikawa, T. Maejima, H. Sakamoto, M. Hayama, and Y. Onishi, "Large Scale and Large Area Amorphous Silicon Thin Film Transistor Arrays for Active Matrix Liquid Crystal Displays," Mater. Res. Soc. Symp. Proc. 95, 431 (1987).
  27. C. C. Tsai, G. B. Anderson, R. Thompson, and B. Wacker, "Control of Silicon Network Structure in Plasma Deposition," J. Non-Cryst. Solids 114, 151 (1989).
  28. K. Takechi, H. Uchida, and S. Kaneko, "Mobility Improvement Mechanism in a-Si:H TFTs with Smooth a-Si:H/SiNx Interface," Mater. Res. Soc. Symp. Proc. 258, 956 (1992).
  29. Y. Kuo, "Thin Film Transistors with Layered a-Si:H Structure," Mater. Res. Soc. Symp. Proc. 377, 701 (1995).
  30. Y. Kuo, "Thin-Film Transistors with Multistep Deposited Amorphous Silicon Layers," Appl. Phys. Lett. 67, No. 15, 2173 (1995).
  31. Y. Uchida, H. Kanoh, O. Sugiura, and M. Matsumura, "Hydrogen-Radical Annealing of Chemical Vapor-Deposited Amorphous Silicon Films," Jpn. J. Appl. Phys. 29, L2171 (1990).
  32. Y. Kuo, F. R. Libsch, and A. Gosh, "Electrical and Optical Stress of Self-Aligned a-Photomask Thin Film Transistors," Proceedings of the First Symposium on Thin Film Transistor Technologies, Y. Kuo, Ed., PV 92-24,The Electrochemical Society, Pennington, NJ, 1992,pp. 59-69.
  33. Y. Kuo, "Doping Gas Effects on Plasma Enhanced Chemical Vapor Deposition of Heavily Phosphorus-Doped n+ Silicon Film," Appl. Phys. Lett. 71, No. 19 (1997).
  34. C. J. Mogab and J. H. Levinstein, "Anisotropic Plasma Etching of Polysilicon," J. Vac. Sci. Technol. 17, 721 (1980).
  35. Y. Kuo and K. Latzko, "Deposition of Highly Conductive n+ Silicon Film for a-Si:H Thin-Film Transistor," to appear in Mater. Res. Soc. Symp. Proc.--Amorphous and Microcrystalline Silicon Technology, 1998.
  36. K. Takechi and H. Hayama, "Gated RF-DischargePlasma-CVD Technology for a-Si:H TFT Fabrication," Proceedings of the Second Symposium on Thin Film Transistor Technologies, Y. Kuo, Ed., PV 94-35, The Electrochemical Society, Pennington, NJ, 1994, pp. 160-173.
  37. H. Meiling, W. F. van der Weg, and R. E. I. Schropp, "High-Rate a-Si:H TFTs: A Comparative Study," Proceedings of the Third Symposium on Thin Film Transistor Technologies, Y. Kuo, Ed., PV 96-23, The Electrochemical Society, Pennington, NJ, 1996, pp. 146-157.
  38. Y. Kuo, "Reactive Ion Etching of PECVD Amorphous Silicon and Silicon Nitride Thin Films with Fluorocarbon Gases," J. Electrochem. Soc. 137, No. 4, 1235 (1990).
  39. Y. Kuo, "Reactive Ion Etching of Plasma Enhanced Chemical Vapor Deposition Amorphous Silicon and Silicon Nitride: Feeding Gas Effects," J. Vac. Sci. Technol. A 8, No. 3, 1702 (1990).
  40. Y. Kuo and M. S. Crowder, "Reactive Ion Etching of PECVD n+ a-Si:H--Plasma Damage to PECVD Silicon Nitride Film and Application to Thin Film Transistor Preparation," J. Electrochem. Soc. 139, No. 2, 548 (1992).
  41. Y. Kuo, "Reactive Ion Etching of Sputter Deposited Tantalum with CF4, CF3Cl, and CHF3," Jpn. J. Appl. Phys. 32, No. 1A, 179 (1993).
  42. Y. Kuo, "Reactive Ion Etching of Sputter Deposited Tantalum Oxide and Its Etch Selectivity to Tantalum,"J. Electrochem. Soc. 139, 579 (1992).
  43. Y. Kuo, "Plasma Etching Mechanism of Metal Oxides Derived from RIE of Ta2O5 and TiO2," Proceedings of the Eleventh Symposium on Plasma Processing, G. S. Mathad and M. Meyappan, Eds., PV 96-12, The Electrochemical Society, Pennington, NJ, 1996, pp. 536-544.
  44. Y. Kuo, "Fundamentals of Dry Etching of Indium Tin Oxide Thin Film," Sputtering & Plasma Processes (Japan Technology Transfer Assoc.) 11, No. 5, 9 (1996).
  45. Y. Kuo, "High Temperature Reactive Ion Etching of Indium Tin Oxide: The Non-Additive Feed Gas Effect," Proceedings of Thin Film Materials, Processes, Reliability, and Applications: Thin Film Processes, G. S. Mathad,M. Meyappan, and M. Engelhardt, Eds., PV 97-30, The Electrochemical Society, Pennington, NJ, 1997, pp. 71-78.
  46. Y. Kuo, "Anomalous High Rate Reactive Ion Etching Process for Indium Tin Oxide," Jpn. J. Appl. Phys. 36,No. 2(5B), L629 (1997).
  47. Y. Kuo and T. L. Tai, "High Temperature Reactive Ion Etching of Indium Tin Oxide with HBr and CH4 Mixtures," J. Electrochem. Soc. 145, No. 12, 4313 (1998).
  48. Y. Kuo, "Factors Affecting the Molybdenum Line Slope by Reactive Ion Etching," J. Electrochem. Soc. 137, No. 6, 1907 (1990).
  49. R. J. Saia and B. Gorowitz, "Dry Etching of Tapered Contact Holes Using Multilayer Resist," J. Electrochem. Soc. 132, 1954 (1985).
  50. Y. Kuo and J. R. Crowe, "Slope Control of Molybdenum Lines Etched with Reactive Ion Etching," J. Vac. Sci. Technol. A 8, No. 3, 1529 (1990).
  51. K. Okajima, T. Sato, T. Dohi, and M. Shibata, "MoW Etching Process Using Chemical Dry Etching for Lower Resistive Gate Metal on TFT Large Glass Substrate," Proceedings of the Fourth International Symposium on Sputtering and Plasma Processes, Japan Technology Transfer Assoc., 1997, p. 369.
  52. S. J. Fonash, "Plasma Processing Damage in Etching and Deposition," IBM J. Res. Develop. 43, 103-107 (1999, this issue).
  53. K. Nakamura, T. Imura, H. Sugai, M. Ohkubo, and K. Ichihara, "High-Speed Etching of Indium-Tin-Oxide Thin Films Using an Inductively Coupled Plasma," Jpn. J. Appl. Phys. 33(7B), No. 1, 4438 (1994).

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