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IBM Journal of Research and Development  
Volume 43, Numbers 1/2, 1999
Plasma processing
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Plasma-assisted oxidation, anodization, and nitridation of silicon - References

by D. W. Hess

References

  1. 1. C. J. Dell'Oca, D. L. Pulfrey, and L. Young, "Anodic Oxide Films," Physics of Thin Films, Vol. 6, H. Francombe and R. W. Hoffmann, Eds., Academic Press, Inc., New York, 1971, pp. 1-79.
  2. J. F. O'Hanlon, "Gas Discharge Anodization," Oxides and Oxide Films, Vol. 5, A. K. Vijh, Ed., Marcel Dekker, New York, 1977, pp. 105-166.
  3. A. T. Fromhold, Jr., and J. M. Baker, "Oxide Growth in an rf Plasma," J. Appl. Phys. 51, 6377-6392 (1980).
  4. S. Gourrier and M. Bacal, "Review of Oxide Formation in a Plasma," Plasma Chem. Plasma Proc. 1, 217-232 (1981).
  5. P. Friedel and S. Gourrier, "Review of Oxidation Processes in Plasmas," J. Phys. Chem. Solids 44, 353-364 (1983).
  6. A. Reisman, "Assisted Oxidation and Annealing in VLSI and ULSI," Semiconductor Silicon, H. Huff, T. Abe, and B. Kolbesen, Eds., The Electrochemical Society, Inc., Pennington, NJ, 1986, pp. 364-378.
  7. S. Taylor, J. F. Zhang, and W. Eccleston, "A Review of the Plasma Oxidation of Silicon and Its Applications," Semicond. Sci. Technol. 8, 1426-1433 (1993).
  8. D. W. Hess, "Plasma-Assisted Oxidation and Nitridation of Silicon," Proceedings of the Symposium on Silicon Nitride and Silicon Dioxide Thin Insulating Films, V. J. Kapoor and W. D. Brown, Eds., The Electrochemical Society, Inc., Pennington, NJ, 1994, pp. 229-243.
  9. J. R. Ligenza, "Silicon Oxidation in an Oxygen Plasma Excited by Microwaves," J. Appl. Phys. 36, 2703-2707 (1965).
  10. J. Kraitchman, "Silicon Oxide Films Grown in a Microwave Discharge," J. Appl. Phys. 38, 4323-4330 (1967).
  11. A. Kiermasz, W. Eccleston, and J. L. Moruzzi, "Theory of the Growth of SiO2 in an Oxygen Plasma," Solid State Electron. 26, 1167-1172 (1983).
  12. S. Taylor, K. J. Barlow, W. Eccleston, and A. Kiermasz, "Comparison of rf and Microwave Oxidation Systems for the Growth of Thin Oxides at Low Temperatures," Electron. Lett. 23, 309-310 (1987).
  13. S. Taylor, W. Eccleston, and K. J. Barlow, "Theory for the Plasma Anodization of Silicon under Constant Voltage and Constant Current Conditions," J. Appl. Phys. 64, 6515-6522 (1988).
  14. K. J. Barlow, S. Taylor, W. Eccleston, and A. Kiermasz, "The Low-Temperature Anodization of Silicon in a Gaseous Plasma," IEEE Trans. Electron Devices ED-36, 1279-1285 (1989).
  15. C. Y. Fu, J. C. Mikkelsen, Jr., J. Schmitt, J. Abelson, J. C. Knights, N. Johnson, A. Barker, and M. J. Thompson, "Microwave Plasma Oxidation of Silicon," J. Electron. Mater. 14, 685-706 (1985).
  16. D. W. Hess, "Oxidation of Silicon in Halogenated Atmospheres and Oxidation of Heavily Doped Silicon: Analysis by the Deal-Grove Model," The Physics and Chemistry of SiO2 and the Si-SiO2 Interface, Vol. 3, J. Z. Massoud, E. H. Poindexter, and C. R. Helms, Eds., The Electrochemical Society, Inc., Pennington, NJ, 1996, pp. 143-159.
  17. J. Ruzyllo, A. Hoff, and G. Ruggles, "Evaluation of Thin Oxides Grown by the Atomic Oxygen Afterglow Method," J. Electron. Mater. 16, 373-378 (1987).
  18. C. Vinckier, P. Coeckelberghs, G. Stevens, M. Heyns, and S. DeJaegere, "Kinetics of the Silicon Dioxide Growth Process in Afterglows of Microwave-Induced Plasmas," J. Appl. Phys. 62, 1450-1458 (1987).
  19. C. Vinckier, P. Coeckelberghs, G. Stevens, and S. DeJaegere, "Oxidation of Silicon in the Afterglow of Microwave Induced Plasmas," Appl. Surf. Sci. 30, 40-46 (1987).
  20. Y. Yasuda, S. Zaima, T. Kaida, and Y. Koide, "Formation of Si-SiO2 Interfaces at Low Temperatures Using Microwave-Excited Plasma," Appl. Surf. Sci. 41/42, 429-432 (1989).
  21. Y. Yasuda, S. Zaima, T. Kaida, and Y. Koide, "Mechanisms of Silicon Oxidation at Low Temperatures by Microwave-Excited O2 Gas and O2-N2 Mixed Gas," J. Appl. Phys. 67, 2603-2607 (1990).
  22. C. Vinckier and S. DeJaegere, "Yields of the Plasma Oxidation of Silicon by Neutral Oxygen Atoms and Negative Oxygen Atom Ions," J. Electrochem. Soc. 137, 628-631 (1990).
  23. D. L. Pulfrey, F. G. M. Hathorn, and L. Young, "The Anodization of Si in an RF Plasma," J. Electrochem. Soc. 120, 1529-1535 (1973).
  24. D. L. Pulfrey and J. J. H. Reche, "Preparation and Properties of Plasma-Anodized Silicon Dioxide Films," Solid State Electron. 17, 627-632 (1974).
  25. V. Q. Ho and T. Sugano, "Selective Anodic Oxidation of Silicon in Oxygen Plasma," IEEE Trans. Electron Devices ED-27, 1436-1443 (1980).
  26. A. J. Choksi, R. Lal, and A. N. Chandorkar, "Electrical Properties of Silicon Dioxide Grown by Inductively Coupled R. F. Plasma Anodization," Solid State Electron. 34, 765-770 (1991).
  27. H. Kuroki, H. Shinno, K. G. Nakamura, M. Kitajima, and T. Kawabe, "Plasma Density Dependence of the Oxidation Rate of Si by In-Situ During Process Rapid Ellipsometry," J. Appl. Phys. 71, 5278-5280 (1992).
  28. T. Ueno, T. Akiyama, K. Kuroiwa, and Y. Tarui, "Highly Efficient Generation of High-Energy Photons and Low-Temperature Oxidation of a Crystal Silicon Surface with O1D Radicals," Appl. Surf. Sci. 79/80, 502-506 (1994).
  29. N. Haneji, F. Arai, K. Asada, and T. Sugano, "Anodic Oxidation of Si in Oxygen/Chlorine Plasma," IEEE J. Solid State Circuits SC-20, 20-25 (1985).
  30. A. K. Ray and A. Reisman, "Plasma Oxide FET Devices," J. Electrochem. Soc. 128, 2424-2428 (1981); "The Formation of SiO2 in an RF Generated Oxygen Plasma. I. The Pressure Range Below 10 mtorr," J. Electrochem. Soc. 128, 2460-2465 (1981); "The Formation of SiO2 in an RF Generated Oxygen Plasma. II. The Pressure Range Above 10 mtorr," J. Electrochem. Soc. 128, 2466-2472 (1981).
  31. K. Eljabaly and A. Reisman, "Growth Kinetics and Annealing Studies of the `Cathodic' Plasma Oxidation of Silicon," J. Electrochem. Soc. 138, 1064-1070 (1991); "Species Charge and Oxidation Mechanism in the `Cathodic' Plasma Oxidation of Silicon," J. Electrochem. Soc. 138, 1071-1076 (1991).
  32. S. A. Nelson and R. A. Buhrman, "Thin Silicon Oxides Grown by Low-Temperature rf Plasma Anodization and Deposition," Appl. Phys. Lett. 50, 1095-1097 (1987).
  33. S. A. Nelson, H. D. Hallen, and R. A. Buhrman, "A Structural and Electrical Comparison of Thin SiO2 Films Grown on Silicon by Plasma Anodization and Rapid Thermal Processing to Furnace Oxidation," J. Appl. Phys. 63, 5027-5035 (1988).
  34. Y. Kawai, N. Konishi, J. Watanabe, and T. Ohmi, "Ultra-Low Temperature Growth of High-Integrity Gate Oxide Films by Low-Energy Ion-Assisted Oxidation," Appl. Phys. Lett. 64, 2223-2225 (1994).
  35. D. N. Modlin and W. A. Tiller, "Effects of Corona-Discharge-Induced Oxygen Ion Beams and Electric Fields on Silicon Oxidation Kinetics. I. Ion Beam Effects," J. Electrochem. Soc. 138, 1163-1168 (1985); "Effects of Corona-Discharge-Induced Oxygen Ion Beams and Electric Fields on Silicon Oxidation Kinetics. II. Electric Field Effects," J. Electrochem. Soc. 132, 1659-1663 (1985).
  36. L. M. Landesberger, D. B. Kao, and W. A. Tiller, "Conformal Two-Dimensional SiO2 Layers on Silicon Grown by Low Temperature Corona Discharge," J. Electrochem. Soc. 132, 1766-1771 (1988).
  37. M. R. Madani and P. K. Ajmera, "Characterization of Silicon Oxide Films Grown at Room Temperature by Point-To-Plane Corona Discharge," J. Electron. Mater. 22, 1147-1152 (1993).
  38. J. A. Dagate, J. Schnier, H. H. Harary, C. J. Evans, M. T. Postek, and J. Bennett, "Modification of Hydrogen-Passivated Silicon by a Scanning Tunneling Microscope Operating in Air," Appl. Phys. Lett. 56, 2001-2003 (1990).
  39. H. Sugimura and N. Nakagiri, "Fabrication of Silicon Nanostructures Through Scanning Probe Anodization Followed by Chemical Etching," Nanotechnol. 6, 29-33 (1995).
  40. A. E. Gordon, R. T. Fayfield, D. D. Litfin, and T. K. Higman, "Mechanisms of Surface Anodization Produced by Scanning Probe Microscopes," J. Vac. Sci. Technol. B 13, 2805-2808 (1995).
  41. E. S. Snow, P. M. Campbell, and P. J. McMarr, "AFM-Based Fabrication of Free-Standing Si Nanostructures," Nanotechnol. 7, 434-437 (1996).
  42. D. Stievenard, P. A. Fontaine, and E. Dubois, "Nanooxidation Using a Scanning Probe Microscope: An Analytical Model Based on Field Induced Oxidation," Appl. Phys. Lett. 70, 3272-3274 (1997).
  43. P. Avouris, T. Hertel, and R. Martel, "Atomic Force Microscope Tip-Induced Local Oxidation of Silicon: Kinetics, Mechanism, and Nanofabrication," Appl. Phys. Lett. 71, 285-287 (1997).
  44. D. A. Carl, D. W. Hess, and M. A. Lieberman, "Oxidation of Silicon in an Electron Cyclotron Resonance Oxygen Plasma: Kinetics, Physicochemical, and Electrical Properties," J. Vac. Sci. Technol. A 8, 2924-2930 (1990).
  45. S. Kimura, E. Murakami, K. Miyake, T. Warabisako, H. Sunami, and T. Tokuyama, "Low Temperature Oxidation of Silicon in a Microwave-Discharged Oxygen Plasma," J. Electrochem. Soc. 132, 1460-1466 (1985).
  46. S. Kimura, E. Murakami, T. Warabisako, and H. Sunami, "Microwave-Discharge Plasma Oxidation of Silicon in a Cusp Magnetic Field," J. Electrochem. Soc. 135, 2009-2012 (1988).
  47. S. Kimura, E. Murakami, K. Miayake, T. Warabisako, E. Mitani, and H. Sunami, "An 18O Study of Oxygen Exchange Phenomena During Microwave-Discharge Plasma Oxidation of Silicon," J. Appl. Phys. 63, 4655-4660(1988).
  48. B. E. Deal and A. S. Grove, "General Relationship for the Thermal Oxidation of Silicon," J. Appl. Phys. 36, 3770-3778 (1965).
  49. N. Cabrera and N. Mott, "Theory of the Oxidation of Metals," Rept. Prog. Phys. 12, 163-184 (1948).
  50. G. T. Salbert, D. K. Reinhard, and J. Asmussen, "Oxide Growth on Silicon Using a Microwave Electron Cyclotron Resonance Oxygen Plasma," J. Vac. Sci. Technol. A 8, 2919-2923 (1990).
  51. D. A. Carl, D. W. Hess, M. A. Lieberman, T. D. Nguyen, and R. Gronsky, "Effects of dc Bias on the Kinetics and Electrical Properties of Silicon Dioxide Grown in an Electron Cyclotron Resonance Plasma," J. Appl. Phys. 70, 3301-3313 (1991).
  52. D. R. Wolters and A. T. A. Zegers-van Duynhoven, "Kinetics of Dry Oxidation of Silicon. I. Space-Charge-Limited Growth," J. Appl. Phys. 65, 5126-5133 (1989); "Kinetics of Dry Oxidation of Silicon. II. Conditions Affecting the Growth," J. Appl. Phys. 65, 5134-5141 (1989).
  53. J. Joseph, Y. Z. Hu, and E. A. Irene, "A Kinetics Study of the Electron Cyclotron Resonance Plasma Oxidation of Silicon," J. Vac. Sci. Technol. B 10, 611-617 (1992).
  54. T. G. Mills and F. A. Kroger, "Electrical Conduction at Elevated Temperatures in Thermally Grown Silicon Dioxide Films," J. Electrochem. Soc. 120, 1582-1586 (1973).
  55. Y. Z. Hu, Y. Q. Wang, M. Li, J. Joseph, and E. A. Irene, "In Situ Investigation of Temperature and Bias Dependent Effects on the Oxide Growth of Si and Ge in an Electron Cyclotron Resonance," J. Vac. Sci. Technol. A 11, 900-904 (1993).
  56. P. R. Lefebvre and E. A. Irene, "Comparison of Si and GaAs/Interfaces Resulting from Thermal and Plasma Oxidation," J. Vac. Sci. Technol. B 15, 1173-1181 (1997).
  57. Y. Z. Hu, J. Joseph, and E. A. Irene, "In Situ Spectroscopic Ellipsometry Study of the Electron Cyclotron Resonance Plasma Oxidation of Silicon and Interfacial Damage," Appl. Phys. Lett. 59, 1353-1355 (1991).
  58. S. R. Kaluri and D. W. Hess, "Constant Current N2O Plasma Anodization of Silicon," J. Electrochem. Soc. 144, 2200-2205 (1997).
  59. A. Kazor and I. W. Boyd, "Ozone-Induced Rapid Low Temperature Oxidation of Silicon," Appl. Phys. Lett. 63, 2517-2519 (1993).
  60. I. S. Goh, S. Hall, W. Eccleston, J. F. Zhang, and K. Werner, "Interface Quality of SiGe Oxide Prepared by RF Plasma Anodisation," Electron. Lett. 30, 1988-1989 (1994).
  61. I. S. Goh, J. F. Zhang, S. Hall, W. Eccleston, and K. Werner, "Plasma Oxidation of Si and SiGe," Microelectron. Eng. 28, 221-224 (1995).
  62. P. W. Li, H. K. Liou, E. S. Yang, S. S. Iyer, T. P. Smith III, and Z. Lu, "Formation of Stoichiometric SiGe Oxide by Electron Cyclotron Resonance Plasma," Appl. Phys. Lett. 60, 3265-3267 (1992).
  63. P. W. Li and E. S. Yang, "SiGe Gate Oxide Prepared at Low Temperature in an Electron Cyclotron Resonance Plasma," Appl. Phys. Lett. 63, 2938-2940 (1993).
  64. R. C. Frye, J. J. Kumler, and C. C. Wong, "Investigation of Surface Passivation of Amorphous Silicon Using Photothermal Deflection Spectroscopy," Appl. Phys. Lett. 50, 101-103 (1987).
  65. P. Danesh, "Post-Deposition Oxygen Plasma Treatment of a-Si:H," Thin Solid Films 202, L5-L7 (1991).
  66. S. R. Kaluri, R. S. Howell, D. W. Hess, and M. K. Hatalis, "Helical Resonator Plasma Oxidation of Amorphous and Polycrystalline Silicon for Flat Panel Displays," Flat Panel Display Materials II, M. K. Hatalis, J. Kanicki, C. J. Summers, and F. Funada, Eds., Mater. Res. Soc. Symp. Proc. 424, 165-170 (1997).
  67. T.-H. Ihn, S.-W. Lee, B.-I. Lee, Y.-C. Jeon, and S.-K. Joo, "ECR Plasma Oxidation of Amorphous Silicon for Improvement of the Interface State in a Poly Silicon Thin Film Transistor," Flat Panel Display Materials II, M. K. Hatalis, J. Kanicki, C. J. Summers, and F. Funada, Eds., Mater. Res. Soc. Symp. Proc. 424, 189-195 (1997).
  68. J.-Y. Lee, C.-H. Han, and C.-K. Kim, "High Performance Low Temperature Polysilicon Thin Film Transistor Using ECR Plasma Thermal Oxide as Gate Insulator," IEEE Electron Device Lett. 15, 301-303 (1994).
  69. J.-Y. Lee, C.-H. Han, C.-K. Kim, and B.-K. Kim, "Effects of Electron Cyclotron Resonance Plasma Thermal Oxidation on the Properties of Polycrystalline Silicon Films," Appl. Phys. Lett. 67, 1880-1882 (1995).
  70. B.-H. Min, C.-M. Park, J.-H. Jun, B.-S. Bae, and M.-K. Han, "Performance of Poly-Si TFTs with Double Gate Oxide Layers," Flat Panel Display Materials II, M. K. Hatalis, J. Kanicki, C. J. Summers, and F. Funada, Eds., Mater. Res. Soc. Symp. Proc. 424, 171-176 (1997).
  71. A. A. Bright, J. Batey, and E. Tierney, "Low-Rate Plasma Oxidation of Si in a Dilute Oxygen/Helium Plasma for Low-Temperature Gate Quality Si/SiO2 Interfaces," Appl. Phys. Lett. 58, 619-621 (1991).
  72. G. Lucovsky, T. Yasuda, Y. Ma, S. Habermehl, S. S. He, and D. J. Stephens, "Low Temperature Plasma-Assisted Oxidation and Thin-Film Deposition Processes for Forming Device-Quality SiO2/Si and Composite Dielectric- SiO2/Si Heterostructures," Thin Solid Films 220, 38-44 (1992).
  73. A. Reisman, M. Berkenblit, A. K. Ray, and C. J. Merz, "Nitridation of Silicon in a Multiwafer Plasma System," J. Electron. Mater. 13, 505-521 (1984).
  74. S. S. Wong and W. G. Oldham, "A Multiwafer Plasma System for Anodic Nitridation and Oxidation," IEEE Electron Device Lett. EDL-5, 175-177 (1984).
  75. M. Hirayama, T. Matsukawa, H. Arima, Y. Ohno, N. Tsubouchi, and H. Nakata, "Plasma Anodic Nitridation of Silicon in N2-H2 System," J. Electrochem. Soc. 131, 663-666 (1984).
  76. M. Hirayama, T. Matsukawa, H. Arima, Y. Ohno, and H. Nakata, "Growth Mechanism of Silicon Plasma Anodic Nitridation," J. Electrochem. Soc. 132, 2494-2497 (1985).
  77. A. Ermolieff, P. Bernard, S. Marthon, and J. Camargo DaCosta, "Nitridation of Si(100) Made by Radio Frequency Plasma as Studied by In-Situ Angular Resolved X-Ray Photoelectron Spectroscopy," Dielectric Layers in Semiconductors: Novel Technologies and Devices, G. G. Bentini, Ed., Cedex, France, 1986, pp. 83-94.
  78. J. L. Pyle, T. G. Ruskell, R. K. Workman, X. Yao, and D. Sarid, "Growth of Silicon Nitride by Scanned Probe Lithography," J. Vac. Sci. Technol. B 15, 38-39 (1997).
  79. P. Chen, K. Y. Hsu, J. Lin, and H. Hwang, "Characterization of Ultrathin Dielectrics Grown by Microwave Afterglow Oxygen and N2O Plasma," Jpn. J. Appl. Phys. 34, 973-977 (1995).
  80. Y. Saito, "Oxynitridation of Silicon by Remote-Plasma Excited Nitrogen and Oxygen," Appl. Phys. Lett. 68, 800-802 (1996).
  81. P. J. Tobin, Y. Okada, S. A. Ajuria, V. Lakhotia, W. A. Feil, and R. I. Hegde, "Furnace Formation of Silicon Oxynitride Thin Dielectrics in Nitrous Oxide (N2O): The Role of Nitric Oxide (NO)," J. Appl. Phys. 75, 1811-1817 (1994).
  82. K. A. Ellis and R. A. Buhrman, "Furnace Gas-Phase Chemistry of Silicon Oxynitridation in N2O," Appl. Phys. Lett. 68, 1696-1698 (1996).
  83. K. Koh, H. Nimi, and G. Lucovsky, "Reaction Pathways for Nitrogen Incorporation at Si-SiO2 Interfaces," Amorphous and Crystalline Insulating Thin Films--1996, W. L. Warren, R. A. B. Devine, M. Matsumura, S. Cristoloveanu, Y. Homma, and J. Kanicki, Eds., Mater. Res. Soc. Symp. Proc. 446, 267-272 (1997).
  84. S. R. Kaluri and D. W. Hess, "Constant Current N2O Plasma Anodization of Silicon," J. Electrochem. Soc. 144, 2200-2205 (1997).
  85. Z. H. Lu, S. P. Tay, R. Cao, and P. Pianetta, "The Effect of Rapid Thermal N2O Nitridation on the Oxide/Si (100) Interface Structure," Appl. Phys. Lett. 67, 2836-2838 (1995).
  86. S. R. Kaluri and D. W. Hess, "Nitrogen Incorporation in Thin Silicon Oxides in a N2O Plasma--Effects of Processing Conditions," J. Electrochem. Soc. 145, 662-668 (1998).
  87. S. R. Kaluri, "Plasma-Assisted Nitrogen Incorporation in Thin Gate Dielectrics," Ph.D. Thesis, Lehigh University, Bethlehem, PA, 1997.
  88. M. Bhat, L. K. Han, D. Wristers, J. Yan, D. L. Kwong, and J. Fulford, "Effect of Chemical Composition on the Electrical Properties of NO- Nitrided SiO2," Appl. Phys. Lett. 66, 1225-1227 (1995).
  89. T. Arakawa, R. Matsumoto, and A. Kita, "Effect of Nitrogen Profile on Tunnel Oxynitride Degradation with Charge Injection Polarity," Jpn. J. Appl. Phys. 35, 1491-1495 (1996).
  90. R. Kraft, T. P. Schneider, W. W. Dostalik, and S. Hattangady, "Surface Nitridation of Silicon Dioxide with a High Density Nitrogen Plasma," J. Vac. Sci. Technol. B 15, 967-970 (1997).
  91. D. T. Grider, S. V. Hattangady, R. Kraft, P. E. Nicollian, J. Kuehne, G. Brown, S. Aur, R. H. Eklund, and M. F. Pas, "A 0.18µm CMOS Process Using Nitrogen Profile-Engineered Gate Dielectrics," VLSI Tech. Digest, pp. 47-48 (1997).
  92. J.-W. Lee, N.-I. Lee, and C.-H. Han, "Characteristics of Polysilicon Thin-Film Transistor with Thin-Gate Dielectric Grown by Electron Cyclotron Resonance Nitrous Oxide Plasma," IEEE Electron Device Lett. 18, 172-174 (1997).
  93. N.-I. Lee, J.-W. Lee, S.-H. Hur, H.-S. Kim, and C.-H. Han, "Highly Reliable Polysilicon Oxide Grown by Electron Cyclotron Resonance Nitrous Oxide Plasma," IEEE Electron Device Lett. 18, 486-488 (1997).
  94. J.-W. Lee, N.-I. Lee, S.-H. Hur, and C.-H. Han, "Oxidation of Silicon Using Electron Cyclotron Resonance Nitrous Oxide Plasma and Its Application to Polycrystalline Silicon Thin Film Transistors," J. Electrochem. Soc. 144, 3283-3287 (1997).
  95. C. S. Lai, T. F. Lei, and C. L. Lee, "The Characteristics of Polysilicon Oxide Grown in Pure N2O," IEEE Trans. Electron Devices 43, 326-331 (1996).
  96. A. Masuda, A. Morimoto, M. Kumeda, and T. Shimizu, "Novel Oxidation Process of Hydrogenated Amorphous Silicon Utilizing Nitrous Oxide Plasma," Appl. Phys. Lett. 61, 816-818 (1992).
  97. A. Masuda, I. Fukushi, Y. Yonezawa, T. Minamikawa, A. Morimoto, M. Kumeda, and T. Shimizu, "Spectroscopic Study on N2O-Plasma Oxidation of Hydrogenated Amorphous Silicon and Behavior of Nitrogen," Jpn. J. Appl. Phys. 32, 2794-2802 (1993).
  98. H. Yokomichi, A. Masuda, Y. Yonezawa, and T. Shimizu, "N2-Plasma-Nitridation Effects on Porous Silicon," Thin Solid Films 281-282, 568-571 (1996).

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