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Volume 43, Numbers 1/2, 1999
Plasma processing |
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Table of contents:  HTML ASCII |
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This article: HTML ASCII |
Copyright info |
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Plasma processing damage in etching and deposition - References
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by S. J. Fonash |
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References
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S. J. Fonash, C. R. Viswanathan, and Y. David Chan, "A Survey of Damage
Effects in Plasma Etching," Solid State Technol. 37, 99 (1994).
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T. Gu, M. Okandan, O. O. Awadelkarim, S. J. Fonash, J. Rembetski, P.
Aum, and Y. D. Chan, "Impact of Poly-Si Dry Etching on 0.5 Micron NMOS
Transistor Performance," Electron Device Lett. 15, 48 (1994).
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T. Gu, O. O. Awadelkarim, S. J. Fonash, and Y. D. Chan, "Degradation of
Submicron N-Channel MOSFET Hot Carrier Reliability Due to Edge Damage from
Polysilicon Gate Plasma Etching," Electron Device Lett. 15, 396 (1994).
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S. J. Fonash, "Overview of Dry Etching Damage and Contamination
Effects," J. Electrochem. Soc. 137, 3885 (1990).
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O. O. Awadelkarim, S. J. Fonash, P. I. Mikulan, M. Ozaita, and Y. D.
Chan, "Hydrogen and Processing Damage in CMOS Device Reliability: Defect
Passivation and Depassivation During Plasma Exposures and Subsequent
Annealing," Microelectron. Eng. 28, 477 (1995).
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N. H. Nickel, A. Yin, and S. J. Fonash, "Influence of Hydrogen and
Oxygen Plasma Treatments on Grain-Boundary Defects in Poly-Si," Appl. Phys.
Lett. 65, 3099 (1994).
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A. Salah and O. O. Awadelkarim, "Observation of a New Type of Plasma
Etching Damage: Damage to N-Channel Transistors Arising from Inductive Metal
Loops," Appl. Phys. Lett. 68, 1690 (1996).
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D. Park and Chenming Hu, "Plasma Charging Damage on Ultrathin Gate
Oxides," Electron Device Lett. 19, 1 (1998).
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O. O. Awadelkarim, S. J. Fonash, P. I. Mikulan, and Y. D. Chan, "Plasma
Charging Damage to Gate SiO2 and Gate SiO2/Si Interfaces in Submicron NMOS:
Latent Defects and Passivation/Depassivation of Defects by Hydrogen," J. Appl.
Phys. 79, 517 (1996).
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M. Okandan, S. J. Fonash, M. Ozaita, F. Preuninger, Y. D. Chan, and J.
Werking, "Cyclic Current-Voltage Characterization Applied to Edge Damage
Evaluation in Gate Definition Plasma Etching," Electron Device Lett. 18, 495
(1997).
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E. F. Runnion, S. M. Gladstone, R. S. Scott, D. J. Dumin, L. Lie, and J.
C. Mitros, "Thickness Dependence of Stress Induced Leakage Currents in Silicon
Dioxide," IEEE Trans. Electron Devices 44, 993 (1997).
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M. Depas, T. Nigam, and M. Heyns, "Soft Breakdown of Ultra-Thin Oxide
Layers," IEEE Trans. Electron Devices 43, 1499 (1996).
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M. Okandan, S. J. Fonash, O. O. Awadelkarim, Y. D. Chan, and F.
Preuninger, "Soft Breakdown Damage in MOSFETs Due to High-Density Plasma Etching
Exposure," Electron Device Lett. 17, 388 (1996).
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S. H. Lo, D. A. Buchanan, Y. Taur, and W. Wang, "Quantum-Mechanical
Modeling of Electron Tunneling Current from the Inversion Layer of
Ultra-Thin-Oxide nMOSFETs," Electron Device Lett. 18, 209 (1997).
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