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Volume 43, Numbers 1/2, 1999
Plasma processing |
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Plasma-assisted chemical vapor deposition of dielectric thin films for ULSI semiconductor circuits - References
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by D. R. Cote,
S. V. Nguyen,
A. K. Stamper,
D. S. Armbrust,
D. Tobben ,
R. A. Conti , and
G. Y. Lee |
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References
-
S. V. Nguyen, "Plasma-Assisted Chemical Vapor Deposition," Handbook
of Thin-Film Deposition Processes and Techniques, Klaus K. Schuegraf, Ed.,
Noyes Publications, Park Ridge, NJ, 1988, pp. 112-141.
-
G. S. Anderson, "Sputtering of Dielectrics by High-Frequency Fields,"
J. Appl. Phys. 33, No. 10, 2991-2992 (1962).
-
L. L. Atl, S. W. Ing, Jr., and K. W. Laendle, "Low-Temperature
Deposition of Silicon Oxide Films," J. Electrochem. Soc. 110, 465 (1963).
-
S. W. Ing, Jr. and W. Davern, "Use of Low-Temperature Deposited
Silicon Oxide Films as Diffusion Masks in GaAs," J. Electrochem. Soc. 111,
120-122 (1964).
-
A. R. Reinbergh, "Plasma Deposition of Inorganic Thin Films," Ann.
Rev. Mater. Sci. 9, 341-372 (1979).
-
A. R. Reinbergh, "RF Plasma Deposition of Inorganic Films for
Semiconductor Applications," Electrochem. Soc. Ext. Abstr., No. 6, pp. 19-21,
Spring 1974 Meeting, San Francisco.
-
Plasma CVD papers in Proceedings of the Fourteenth International VLSI
Multilevel Interconnection Conference (VMIC), 1997.
-
Plasma CVD papers in Proceedings of the Third International Dielectrics
for ULSI Multilevel Interconnection Conference (DUMIC), 1997.
-
Plasma CVD papers in "Characterization of Plasma Enhanced CVD
Processes," G. Lucovsky, D. E. Ibbotson, and D. W. Hess, Eds., Mater. Res.
Soc. Symp. Proc. 165 (1989).
-
Plasma CVD papers in Symposium Proceedings Vols. I-IV of the 13th
International Symposium in Plasma Chemistry, C. K. Wu, Ed., 1997.
-
Papers in Proceedings of the International Symposium in Plasma
Chemistry: 6th in Montreal, Canada (1983), 7th in Eindhoven, Netherlands
(1985), 8th in Tokyo, Japan (1987), 9th in Pugnochiuso, Italy (1989), 10th in
Bochum, Germany (1991), 11th in Loughborough, England (1993), and 12th in
Minneapolis, MN (1995), and references therein. Published by the International
Union of Pure and Applied Chemistry Subcommittee in Plasma Chemistry.
-
D. E. Carlson, C. W. Magee, and A. R. Triano, "The Effect of Hydrogen
Content on the Photovoltaic Properties of Amorphous Silicon," J. Electrochem.
Soc.: Solid-State Sci. Technol. 126, No. 4, 688-691 (1979).
-
Color Hard Copy and Graphic Arts II, Proc. SPIE 1912 (1993).
-
W. C. O'Mara, Liquid Crystal Flat Panel Displays, Manufacturing Science
and Technology, Van Nostrand Reinhold, New York, 1993.
-
S. Sherman, S. Wagner, J. Mucha, and R. A. Gottscho, "Substrate Effect
on Plasma-Enhanced Chemical Vapor Deposited Silicon Nitride," J. Electrochem.
Soc. 144, No. 9, 3198-3204 (1997).
-
J. Hautala, Z. Saleh, J. F. M. Westendrop, H. Meiling, S. Sherman, and
S. Wagner, "High Deposition Rate a-Si:H for the Flat Panel Display Industry,"
Proceedings of the Flat Panel Display Materials II Symposium, San Francisco,
April 8-12, 1996, pp. 9-18.
-
Handbook of Thin-Film Deposition Processes and Techniques; Klaus K.
Schuegraf, Ed., Noyes Publications, Park Ridge, NJ, 1988.
-
Handbook of Plasma Processing Techniques; S. M. Rossnagel, J. J. Cuomo,
and W. D. Westwood, Eds., Noyes Publications, Park Ridge, NJ, 1988.
-
H. Randhawa, "Review of Plasma-Assisted Chemical Vapor Deposition
Processes," Thin Solid Films 196, 329-349 (1991).
-
J. A. Thornton, "Plasma-Assisted Deposition Processes: Theory,
Mechanisms and Applications," Thin Solid Films 107, 3-19 (1983).
-
A. T. Bell, "Abstract: Fundamentals of Plasma Chemistry," J. Vac.
Sci. Technol. 16, No. 2, 418-419 (1979).
-
R. F. Bunshah, "Critical Issues in Plasma-Assisted Vapor Deposition
Processes," IEEE Trans. Plasma Sci. 18, 846-854 (1990) and references therein.
-
A. Sherman, "Plasma-Assisted Chemical Vapor Deposition Processes and
Their Semiconductor Applications," Thin Solid Films 113, 135-149 (1984).
-
S. V. Nguyen, "Plasma Assisted Chemical Vapor Deposited Thin Films for
Microelectronic Applications," J. Vac. Sci. Technol. B 4, No. 5, 1159-1167
(1986) and references therein.
-
C. Bencher, C. Ngai, B. Roman, S. Lian, and T. Vuong, "Dielectric
Antireflective Coatings for DUV Lithography," Solid State Technol. 40, No. 3,
109-114 (1997) and references therein.
-
S. V. Nguyen, "High-Density Plasma Chemical Vapor Deposition of
Silicon-Based Dielectric Films for Integrated Circuits," IBM J. Res. Develop.
43, No. 1/2, - (1999, this issue).
-
L. A. Miller and A. K. Stamper, "Passivation Effects on the Stress
Migration and Electromigration Performance of Ti-AlCu-TiN Metallurgy,"
Proceedings of the Twelfth International VMIC, 1995, pp. 369-375.
-
B. L. Chin and E. P. van de Ven, "Plasma TEOS for Interlayer
Dielectric Applications," Solid State Technol. 31, 119-122 (1988).
-
D. R. Cote, S. V. Nguyen, W. J. Cote, S. L. Pennington, A. K. Stamper,
and D. V. Podlesnik, "Low-Temperature Chemical Vapor Deposition Processes and Dielectrics for Microelectronic Circuit Manufacturing at IBM," IBM J. Res.
Develop. 39, No. 4, 437-464 (1995).
-
D. Cote, A. Antreasyan, D. Podlesnik, and A. LeBlanc, "PECVD
Process-Induced Gate Oxide Degradation in 64-MB DRAM," Abstracts of the
International Conference on Metallurgical Coatings and Thin Films, American
Vacuum Society, 1995, Abstract No. H2.04, p. A-257.
-
D. Cote, S. Nguyen, V. McGahay, C. Waskiewicz, S. Chang, A. Stamper, P.
Weigand, N. Shoda, and T. Matsuda, "Process-Induced Gate Oxide Damage Issues
in Advanced Plasma Chemical Vapor Deposition Processes," Proceedings of the
First International Symposium on Plasma Process-Induced Damage, Santa Clara,
CA, 1996, pp. 61-66.
-
A. K. Stamper, J. B. Lasky, and J. W. Adkisson, "Plasma-Induced Gate
Oxide Charging Issues for
Sub-0.5 µm CMOS Technologies," J. Vac. Sci. Technol. A
13, 905-911 (1995).
-
J. A. O'Neill, C. J. Waskiewicz, and D. Cote, "Effect of Temperature
on Plasma-Induced Charge Damage in PECVD Processes," Abstracts of the 43rd
American Vacuum Society Symposium, 1996, Abstract No.
PS2-MoM11, p. 13.
-
M. S. Fung, "Monitoring PSG Plasma Damage with COS," Semicond. Int.
20, 211-221 (1997).
-
G. T. Chetney and L. H. Holschwander, "Protection of SiO2 from Sodium
Contamination with Phosphosilicate Glass," International Electron Devices
Meeting (IEDM) Technical Survey--40th Anniversary Commemorative Edition, 1965,
p. 99.
-
E. Yon, W. H. Ko, and A. B. Kuper, "Sodium Distribution in Thermal
Oxide on Silicon by Radiochemical and MOS Analysis," IEEE Trans. Electron
Devices ED-13, 276-280 (1966).
-
N. Ikegami, N. Ozawa, Y. Miyakawa, and J. Kanamori, "Mechanisms of
High PSG/SiO2 Selective Etching in a Highly Polymerized Fluorocarbon Plasma,"
Jpn. J. Appl. Phys. 30, 1556-1561 (1991).
-
C. H. Ting, "Dielectric Planarization Process for ULSI," Proceedings
of the Electrochemical Society, Spring 1991 Meeting, Washington, DC, pp.
592-605 and references therein.
-
P. Elkins, K. Reinhardt, and R. Tang, "A Planarization Process for
Double Metal CMOS Using Spin-on-Glass as a Sacrificial Layer," Proceedings of
the Third International VMIC, 1986, pp. 100-106 and references therein.
-
A. Rey, D. Lafond, J. M. Mirabel, M. C. Tacussel, and M. F. Coster, "A
Double Level Aluminum Interconnection Technology with Spin on Glass Based
Insulator," Proceedings of the Third International VMIC, 1986, pp. 491-499.
-
A. C. Adams and C. D. Capio, "Planarization of Phosphorus-Doped
Silicon Oxide," J. Electrochem. Soc. 128, 423-429 (1981).
-
H. Fritzche, V. Grewal, and W. Henkel, "An Improved Etch-Back Process
for Multilevel Metallization and Its Reliability Results for CMOS Devices,"
Proceedings of the Third International VMIC, 1986, pp. 45-51 and references
therein.
-
B. Neureither, F. Binder, E. Fischer, Z. Gabric, K. Koller, and S.
Rohl, "Resist Etch Back as a Manufacturable Low Cost Alternative to CMP,"
Proceedings of the Eleventh International VMIC, 1994, pp. 151-157.
-
C. W. Kaanta, S. G. Bombardier, W. J. Cote, W. R. Hill, G.
Kerszykowski, H. S. Landis, D. J. Poindexter, C. W. Pollard, G. H. Ross, J. G.
Ryan, S. Wolff, and J. E. Cronin, "Dual Damascene: A ULSI Wiring Technology,"
Proceedings of the Eighth International VMIC, 1991, pp. 144-152.
-
B. Luther, J. F. White, C. Uzoh, T. Cacouris, J. Hummel, W. Guthrie, N.
Lustig, S. Greco, N. Greco, S. Zuhoski, P. Agnello, E. Colgan, S. Mathad, L.
Saraf, E. J. Weitzman, C. K. Hu, F. Kaufman, M. Jaso, L. P. Buchwalter, S.
Reynolds, C. Smart, D. Edelstein, E. Baran, S. Cohen, C. M. Knoedler, J.
Malinowski, J. Horkans, H. Deligianni, J. Harper, P. C. Andricacos, J.
Paraszczak, D. J. Pearson, and M. Small, "Planar Copper-Polyimide Back End of
the Line Interconnections for ULSI Devices," Proceedings of the Tenth
International VMIC, 1993, pp. 15-21.
-
D. Davari, C. W. Koburger, R. Schulz, J. D. Warnock, T. Furukawa, M.
Jost, Y. Taur, W. G. Schwittek, J. K. DeBrosse, M. L. Kerbaugh, and J. L.
Mauer, "A New Planarization Technique, Using a Combination of RIE and Chemical
Mechanical Polish (CMP)," IEDM
Tech. Digest, pp. 61-64 (1989).
-
R. C. Iggulden, S. J. Weber, R. F. Schnabel, L. A. Clevenger, E. A.
Mehter, M. Hoinkis, M. G. M. Harris, D. C. Butler, and P. Rich, "The
Demonstration of a 0.25 Micron Dual Damascene Metallization Scheme Using
Forcefill," Proceedings of the Fourteenth International VMIC, 1997, pp. 49-54.
-
S. P. Murarka, "Low Dielectric Constant Materials for Interlayer
Dielectrics," Solid State Technol. 39, No. 3, 83-90 (1996) and references
therein.
-
A. K. Stamper, V. McGahay, and J. P. Hummel, "Intermetal Dielectric
Development Outlook," Proceedings of the 191st Meeting of the Electrochemical
Society, Montreal, Canada, May 4, 1997, Second International Symposium on Low
and High Dielectric Constant Material: Material Science, Processing, and
Reliability Issues, H. S. Rathore, R. Singa, R. P. S. Thakur, and S. C. Sun,
Dielectric Science and Technology Division, Eds., 97-8, 1998, p. 1.
-
R. K. Laxman, "Low
Dielectrics: CVD Fluorinated Silicon
Dioxides," Semicond. Int., pp. 71-74 (May 1995).
-
Papers in Proceedings of the MRS Symposium on Low-Dielectric Constant
Materials II, Boston, December 2-3, 1996, A. Lagendijk, H. Treichel, K. J.
Uram, and A. C. Jones, Eds., pp. 3-200.
-
T. Fujii, T. Yokoi, M. Hiramatsu, M. Nawata, M. Hori, T. Goto, and S.
Hattori, "Low Dielectric Constant Film Formation by Oxygen-Radical
Polymerization of Laser-Evaporated Siloxane," J. Vac. Sci. Technol. B 15, No.
3, 746-749 (1997).
-
A. S. Harrus, M. A. Plano, D. Kumar, and J. Kelly, "Parylene AF-4: A
Low Material Candidate for ULSI Multilevel Interconnect Applications,"
Proceedings of the MRS Symposium on Low-Dielectric Constant Materials II,
Boston, December 2-3, 1996, pp. 21-33.
-
G. A. Dixit, K. J. Taylor, A. Singh, C. K. Lee, G. B. Shinn, A.
Konecni, W. Y. Hsu, K. Brennan, Mi-Chang Chang, and R. H. Havemann, "An
Integrated Low Resistance Aluminum Plug and Low-k Polymer Dielectric for High
Performance 0.25µm Interconnects," Symposium on VLSI Technology, Digest of
Technical Papers, 1996, pp. 86-87.
-
T. Ramos, K. Roderick, R. Roth, S. Wallace, N. Hendricks, N.
Rutherford, J. Drage, S. Q. Wang,
and D. M. Smith, "Nanoporous Silica for ULSI Applications," Proceedings of
the Third International DUMIC, 1997, pp. 106-113.
-
T. Ramos, K. Roderick, A. Maskara, and D. M. Smith, "Nanoporous Silica
for Low k Dielectrics," Proceedings of the MRS Symposium on Low-Dielectric
Constant Materials II, Boston, December 2-3, 1996, pp. 91-98.
-
C. Jin, S. List, S. Yamanaka, W. W. Lee, K. Taylor, W.-Y. Hsu, L.
Olsen, J. D. Luttmer, and R. Havemann, "Deposition and Characterization of
Porous Silica Xerogel Films," Proceedings of the MRS Symposium on
Low-Dielectric Constant Materials II, Boston, December 2-3, 1996, pp. 99-104.
-
A. Grill, V. Patel, K. L. Saenger, C. Jahnes, S. A. Cohen, A. G.
Schrott, D. Edelstein, and J. R. Paraszczak, "Diamondlike Carbon Materials as
Low-k Dielectrics for Multilevel Interconnects in ULSI," Proceedings of the
MRS Symposium on Low-Dielectric Constant Materials II, Boston, December 2-3,
1996, pp. 155-164.
-
Y. Matsubara, K. Endo, T. Tatsumi, H. Ueno, K. Sugai, and T. Horiuchi,
"Low-k Fluorinated Amorphous Carbon Interlayer Technology for Quarter Micron
Devices," IEDM Tech. Digest, pp. 369-372 (1996).
-
A. Grill and V. Patel, "Controlling Properties of DLC: Effects of
Pressure and Precursor Dilution," Proceedings of the 3rd International
Conference on the Applications of Diamond Films and Related Materials, 1995,
pp. 21-24.
-
K. Endo and T. Tatsumi, "Amorphous Carbon Thin Films Containing
Benzene Rings for Use as Low-Dielectric-Constant Interlayer Dielectrics,"
Appl. Phys. Lett. 70, No. 19, 2616-2618 (1997).
-
P. S. Andry, P. W. Pastel, and W. J. Varhue, "Comparison of
Diamond-Like Carbon Film Deposition by Electron Cyclotron Resonance with
Benzene and Methane," J. Mater. Res. 11, No. 1, 221-228 (1996).
-
L. H. Chou and W. T. Hsieh, "Effects of Argon Ion Bombardment on the
Microstructures and Electrical Conductivities of Hydrogenated Amorphous Carbon
Films Prepared by Plasma-Enhanced Chemical Vapor Deposition," J. Appl. Phys.
75, No. 4, 2257-2263 (1994).
-
S. P. Murarka, "Multilevel Interconnections for ULSI and GSI Era,"
Mater. Sci. Eng. R19, No. 3-4, 87-151 (1997).
-
N. H. Hendricks, "Low Dielectric Constant Materials for IC Intermetal
Dielectric Applications: A Status Report on Leading Candidates," Proceedings
of the MRS Symposium on Low-Dielectric Constant Materials II, Boston, December
2-3, 1996, pp. 3-14.
-
P. Singer, "Low k-Dielectric: The Search Continues," Semicond. Int.,
pp. 88-96 (May 1996) and "Copper Opportunities and Challenges Review at SRC
Workshop," Semicond. Int., pp. 50-55 (October 1993).
-
A. Grill, "Plasma-Deposited Diamondlike Carbon and Related
Materials," IBM J. Res. Develop. 43, No. 1/2, 147-161 (1999, this
issue).
-
G. Lucovsky, "Preparation of Device-Quality SiO2 Thin Films by Remote
Plasma-Enhanced Chemical Vapour Deposition (PECVD): Applications in
Metal-Oxide-Semiconductor (MOS) Devices," Adv. Mater. Opt. Electron. 6, 55-72
(1996) and references therein.
-
J. Batey and E. Tierney, "Low-Temperature Deposition of High Quality
Silicon Dioxide by Plasma-Enhanced Chemical Vapor Deposition," J. Appl. Phys.
60, No. 9, 3136-3145 (1986).
-
G. Turban, "Basic Phenomena in Reactive Low Pressure Plasmas Used for
Deposition and Etching," Pure & Appl. Chem. 56, No. 2, 215-230 (1984).
-
H. F. Winter, Topics in Current Chemistry: Plasma Chemistry III, S.
Verpek and M. Venugopulan, Eds., Springer-Verlag, Berlin, 1980, pp. 65-112.
-
G. Carter and G. S. Calligan, Ion Bombardment of Solids, American
Elsevier, New York, 1969.
-
J. R. Hollahan and A. T. Bell, Techniques and Applications of Plasma
Chemistry, John Wiley & Sons, New York, 1974.
-
S. V. Nguyen, D. Dobuzinsky, D. Dopp, M. Gleason, R. Gibson, and S.
Fridmann, "Plasma-Assisted Chemical Vapor Deposition of High Quality Silicon
Oxide Films," Thin Solid Films 193/194, 595-609 (1990).
-
S. V. Nguyen, "Plasma Deposition of Silicon Nitride
and Silicon Oxynitride Using Inert Carrier Gases as Transport Agents,"
Proceedings of the Electrochemical Society Spring 1983 Meeting, San Francisco,
pp. 453-460.
-
A. A. Bright, "Helium Plasma Enhanced Chemical Vapor Deposited Oxides
and Nitrides: Process Mechanism and Applications in Advanced Device
Structures," J. Vac. Sci. Technol. A 9, No. 3, 1088-1093 (1991).
-
D. V. Tsu, G. N. Parsons, and G. Lucovsky, "Spectroscopic Emission
Studies of O2/He and N2/He Plasmas in Remote Plasma Enhanced Chemical Vapor
Deposition," J. Vac. Sci. Technol. A 6, No. 3, 1849-1854 (1988).
-
J. D. Chapple-Sokol, W. A. Pliskin, R. A. Conti, E. Tierney, and J.
Batey, "Energy Considerations in the Deposition of High-Quality
Plasma-Enhanced CVD Silicon Dioxide," J. Electrochem. Soc. 138, No. 12,
3723-3726 (1991).
-
R. Winkler, M. Capitelli, C. Gorse, and J. Wilhelm, "Electron Kinetics
in a Collision-Dominated SiH4 rf Plasma Including Self-Consistent rf Field
Strength Calculation," Plasma Chem. Plasma Process. 10, No. 3, 419-442 (1990).
-
H. Dun, P. Pan, F. R. White, and R. W. Douse, "Mechanisms of
Plasma-Enhanced Silicon Nitride Deposition Using SiH4/N2 Mixture," J.
Electrochem. Soc. 128, No. 7, 1555-1563 (1981).
-
W. A. P. Claassen, "Ion Bombardment-Induced Mechanical Stress in
Plasma-Enhanced Deposited Silicon Nitride and Silicon Oxynitride Films,"
Plasma Chem. Plasma Process. 7, No. 1, 109-124 (1987).
-
A. Yuuki, Y. Matsui, and K. Tachibani, "A Study of Radical Fluxes in
Silane Plasma CVD from Trench Coverage Analysis," Jpn. J. Appl. Phys. 28, No.
2, 212-218 (1989).
-
S. Miyazaki, Y. Kiriki, Y. Inoue, and M. Hirose, "Radical- and
Ion-Induced Reactions on Plasma-Deposited Silicon Surfaces," Jpn. J. Appl.
Phys. 30,
No. 7, 1539-1544 (1991).
-
C.-P. Chang, C. S. Pai, and J. J. Hsieh, "Ion and Chemical Radical
Effects on the Step Coverage
of Plasma Enhanced Vapor Deposition Tetraethylorthosilicate Films," J. Appl.
Phys. 67,
No. 4, 2119-2126 (1990).
-
E. R. Mosburg, Jr., R. C. Kerns, and J. R. Abelson,
"Use of Electric Probes in Silane Radio Frequency Discharges," J. Appl.
Phys. 54, No. 9, 4916-4927 (1983).
-
F. J. Kampas, "Chemical Reactions in Plasma Deposition,"
Semiconductors and Semimetals, Vol. 21A, J. I. Pankove, Ed., Academic Press,
Inc., New York, 1984, Ch. 8.
-
D. Mataras, S. Cavadias, and D. Rapakoulias, "Spatial Profiles of
Reactive Intermediates in RF Silane Discharges," J. Appl. Phys. 66, No. 1,
119-124 (1989).
-
N. Itabashi, N. Nishiwaki, M. Magane, S. Naito, T. Goto, A. Matsuda, C.
Yamada, and E. Hirota, "Spatial Distribution of SiH3 Radicals in RF Silane
Plasma,"
Jpn. J. Appl. Phys. 29, No. 3, L.505-L.507 (1990).
-
H. A. Weakliem, "Diagnostics of Silane Glow Discharges Using Probes
and Mass Spectroscopy," Semiconductors and Semimetals, Vol. 21A, J. I.
Pankove, Ed., Academic Press, Inc., New York, 1984, Ch. 10.
-
N. Hata, A. Matsuda, and K. Tanaka, "Neutral Radical Detection in
Silane Glow-Discharge Plasma Using Coherent Anti-Stokes Raman Spectroscopy,"
J. Non-Cryst. Solids 59-60, 667-670 (1983).
-
S. M. Han and E. S. Aydil, "Plasma and Surface Diagnostics During
Plasma-Enhanced Chemical Vapor Deposition of SiO2 from SiH4/O2/Ar Discharges,"
Thin Solid Films 290-291, 427-434 (1996).
-
R. Robertson and A. Gallager, "Mono- and Disilicon Radicals in Silane
and Silane-Argon DC Discharges," J. Appl. Phys. 59, No. 10, 3402-3411 (1986).
-
A. Matsuda and K. Tanaka, "Investigation of the Growth Kinetics of
Glow-Discharge Hydrogenated Amorphous Silicon Using a Radical Separation
Technique," J. Appl. Phys. 60, No. 7, 2351-2356 (1986).
-
P. A. Longeway, R. D. Estes, and H. A. Weakliem, "Deposition Kinetics
of a Static Direct Current Silane Glow Discharge," J. Phys. Chem. 88, 73-77
(1984).
-
M. Heintze and S. Veprek, "Role of Higher Silanes in the
Plasma-Induced Deposition of Amorphous Silicon from Silane," Appl. Phys. Lett.
54, No. 14, 1320-1322 (1989).
-
S. Meikle, Y. Nakanishi, and Y. Hatanaka, "The Role of Hydrogen Atoms
in Afterglow Deposition of Silicon Thin Films," Jpn. J. Appl. Phys. 29, No.
11, L2130-L2132 (1990).
-
A. Gallager, "Neutral Radical Deposition from Silane Discharges," J.
Appl. Phys. 63, No. 7, 2406-2413 (1988).
-
S. Veprek and M. G. J. Veprek-Heijman, "Possible Contribution of SiH2
and SiH3 in the Plasma-Induced Deposition of Amorphous Silicon from Silane,"
Appl. Phys. Lett. 56, No. 18, 1766-1768 (1990).
-
S. Veprek, F.-A. Sarott, S. Rambert, and E. Taglauer, "Surface
Hydrogen Content and Passivation of Silicon Deposited by Plasma Induced
Chemical Vapor Deposition from Silane and the Implications for the Reaction
Mechanism," J. Vac. Sci. Technol. A 7, No. 4, 2614-2624 (1990).
-
J. N. Chiang and D. W. Hess, "Mechanistic Considerations in the Plasma
Deposition of Silicon Nitride Films," J. Electrochem. Soc. 137, No. 7,
2222-2226 (1989).
-
D. L. Smith, A. S. Alimonda, C.-C. Chen, S. E. Ready, and B. Wacker,
"Mechanism of SiNxHy Deposition from NH3-SiH4 Plasma," J. Electrochem. Soc.
137, No. 2, 614-623 (1990).
-
D. L. Smith, A. S. Alimonda, and F. J. von Preissig, "Mechanism of
SiNxHy Deposition from N2-SiH4 Plasma," J. Vac. Sci. Technol. B 8, No. 3,
551-557 (1990).
-
S. Meikle and Y. Hatanaka, "Pressure-Dependent Transition in the
Mechanism of Remote Plasma SiNx Deposition," Appl. Phys. Lett. 57, No. 8,
762-764 (1990).
-
F. H. P. M. Habraken and A. E. T. Kuiper, "Silicon Nitride and
Oxynitride Films," Mater. Sci. Eng. R12, No. 3, 123-175 (1994) and references
therein.
-
D. L. Smith and A. S. Chuang, "Chemistry of SiO2 Deposition," J.
Electrochem. Soc. 140, No. 5, 1496-1503 (1993).
-
G. B. Raupp, T. S. Cale, and H. P. W. Hey, "The
Role of Oxygen Excitation and Loss in Plasma-
Enhanced Deposition of Silicon Dioxide from Tetraethylorthosilicate," J. Vac.
Sci. Technol. B 10,
No. 1, 37-45 (1992).
-
N. Selamoglu, J. A. Mucha, D. E. Ibottson, and D. L. Flamm, "Silicon Oxide Deposition from
Tetraethoxysilane in a Radio Frequency Downstream Reactor: Mechanisms and Step Coverage,"
J. Vac. Sci. Technol. B 7, No. 6, 1345-1351 (1989).
-
T. S. Cale and V. Mahadev, "Feature Scale Transport and Reaction
During Low-Pressure Deposition Processes," "Modeling of Film Deposition for
Microelectronics Applications," Thin Films, Vol. 22, S. Rossnagel and A.
Ulman, Eds., Academic Press, Inc., New York, 1996, pp. 175-276 and references
therein.
-
C. Y. Chang, J. P. McVittie, J. Li, K. C. Saraswat, S. E. Lassig, and
J. Dong, "Profile Simulation of Plasma Enhanced and ECR Oxide Deposition with
Sputtering," IEDM Tech. Digest, pp. 853-856 (1993).
-
J. T. C. Lee, "A Comparison of HDP Sources for Polysilicon Etching,"
Solid State Technol. 39, No. 8, 63-69 (1996).
-
E. Korczynski, "HDP-CVD: Trying to Lasso Lightning," Solid State
Technol. 39, No. 4, 63-73 (1996).
-
R. B. Fair, "Challenges to Manufacturing Sub-Micron, Ultra-Large Scale
Integrated Circuits," Proc. IEEE 78, No. 11, 1687-1705 (1990).
-
Papers from the Second High Density Plasma Workshop, San Francisco,
August 3-4, 1993; J. Vac. Sci. Technol. B 12, 441-511 (1994) and references
therein.
-
B. Fowler and E. O'Brien, "Relationships Between the Material
Properties of Silicon Dioxide Deposited by ECR CVD and Their Use as an
Indicator of the Dielectric Constants," J. Vac. Sci. Technol. B 12, 441-448
(1994).
-
A. Bose, M. M. Garver, and R. A. Spencer, "Advanced Inter-Metal
Dielectric Deposition--A Comparative Analysis Between ECR-CVD and O3/TEOS,"
Proceedings of the Tenth International VMIC, 1993,
pp. 88-95.
-
K. Machida, N. Shimoyama, J. Takahashi, Y. Takahashi, E. Arai, and N.
Yabumoto, "Water-Blocking Mechanism of Electron Cyclotron Resonance
Plasma-SiO2," Proceedings of the Tenth International VMIC, 1993,
pp. 103-109.
-
S. Lassig and J. Tucker, "Electrocyclotron Resonance CVD Lam Epic
System," Lam Research Technical Library TL-019, March 1993, and Lam Research
Thin Film Interface 4, No. 3, 3 (August 1993).
-
S. V. Nguyen and K. Albaugh, "The Characterization of Electron
Cyclotron Resonance Plasma Deposited Silicon Nitride and Silicon Oxide Films,"
J. Electrochem. Soc. 136, 2835-2840 (1989).
-
J. Xie, D. Stark, S. Akbar, P. Aum, D. Chan, and L. Ta, "Study of ECR
Plasma ILD Process Induced Device Damage Using 0.5 µm MOS Transistors with
Capacitive or Inductive Antenna Structures," Proceedings of the Tenth
International VMIC, 1993, pp. 237-243.
-
C. Charles, G. Giroult-Matlakowski, R. W. Boswell,
A. Goullett, G. Turban, and C. Cardinaud, "Characterization of Silicon
Dioxide Films Deposited at Low Pressure and Temperature in a Helicon Diffusion
Reactor," J. Vac. Sci. Technol. A 11, 2954-2963 (1993).
-
G. Giroult-Matlakowski, C. Charles, A. Durandet, R. W. Boswell, S.
Armand, H. M. Persing, A. J. Perry, P. D. Lloyd, S. R. Hyde, and D. Bogsanyi,
"Deposition of Silicon Dioxide Films Using the Helicon Diffusion Reactor for
Integrated Optics Applications," J. Vac. Sci. Technol. A 12, No. 5, 2754-2761
(1994).
-
T. W. Mountsier, A. M. Schoepp, and E. van de Ven, "A New High Density
Plasma Source for Dielectric Gap Fill Applications," Proceedings of the
Electrochemical Society, Fall 1994, Miami Beach, Abstract No. 485, pp. 770-771.
-
S. V. Nguyen, G. Freeman, D. Dobuzinsky, K. Kelleher, R. Nowak, T.
Sahin, and D. Witty, "Characterization of High Density Plasma Deposited
Silicon Oxide Dielectric for 0.25 µm ULSI," Proceedings of the Twelfth
International VMIC, 1995, pp. 69-75.
-
M. A. Lieberman and R. A. Gottscho, "Design of High Density Plasma
Source," Physics of Thin Films: Plasma Sources for Thin Film Deposition and
Etching, Vol. 18, M. H. Francombe and J. L. Vossen, Eds., Academic Press, Inc.,
New York, 1994, Ch. 1, pp. 1-119.
-
High Density Plasma Sources: Design, Physics and Performances, O. A.
Popov, Ed., Noyes Publications, Park Ridge, NJ, 1995.
-
" Equipment Frontiers, Multi-Chamber Single-Wafer CVD System,"
Solid State Technol. 30, 55-56 (1987); D. N. Wang, J. M. White, K. S. Law, C.
Leung, S. P. Umotoy, K. S. Collins, J. A. Adamik, I. Perlov, and
D. Mayden, "CVD of Silicon Oxide Using TEOS Decomposition and In-Situ
Planarization Process," U.S. Patent 4,872,947, October 26, 1988.
-
" Equipment Frontiers, Continuous Process CVD System," Solid State
Technol. 30, 49-50 (1987).
-
L. J. Arias, Jr., S. C. Selbrede, M. T. Weise, and D. A. Carl,
"Characterization of a Low Temperature, Low Pressure Plasma Enhanced Chemical
Vapor Deposition Tetraethylorthosilicate Oxide Deposition Process,"
J. Vac. Sci. Technol. A 15, No. 3, 1389-1393 (1997).
-
R. Iscoff, "In-Situ Deposition Rate Monitoring for Thin Films,"
Semicond. Int., pp. 69-76 (August 1994).
-
J. R. Mitchell and B. A. Knollenberg, "New Techniques Move In-Situ
Particle Monitoring Closer to the Wafer," Semicond. Int., pp. 145-154
(September 1996).
-
V. Singh, "Model-Based Equipment Design for Optimized Plasma
Processing," Solid State Technol. 40, No. 6, 147-152 (1997).
-
M. A. Drew, M. G. Hanssmann, and D. Camporese, "Automation and Control
for 300 mm Process Tools," Solid State Technol. 40, No. 1, 51-64 (1997).
-
J. Y. Chen, R. C. Henderson, J. T. Hall, and J. W.
Peter, Proceedings of the 9th International Conference
on CVD, McD. Robinson, G. W. Cullen, C. H. J.
van den Brekel, and J. M. Blocker, Jr., Eds., 84-8,
The Electrochemical Society, Inc., Pennington, NJ, 1984,
pp. 243-257 and references therein.
-
N. Goldsmith and W. Kern, "The Deposition of Vitreous Silicon Dioxide
Films from Silane," RCA Rev. 28, 153-165 (1967).
-
P. Singer, "Making the Move to Dual Damascene Processing," Semicond.
Int., pp. 79-82 (August 1997).
-
P. Singer, "The Future of Dielectric CVD: High Density Plasmas?"
Semicond. Int., pp. 126-134 (July 1997).
-
P. Weigand, N. Shoda, T. Matsuda, S. Nguyen, J. Rzuczek, M. J. Shapiro,
T. Jones, and R. Ploessl, "HDPCVD Silicon Oxide Deposition: The Effect of
Sputtering on Film Properties," Proceedings of the Thirteenth International
VMIC, 1996, pp. 75-80.
-
A. Stamper, V. McGahay, T. J. Hartswick, D. R. Cote, L. A. Miller, and
E. G. Walton, "Inter-Metal Dielectric Gapfill Processes for High Aspect Ratio
CMOS Technologies," Proceedings of the Thirteenth International VMIC, 1996,
pp. 617-619.
-
H. K. Lee, A. K. Stamper, D. Bouldin, T. McDevitt, and S. Luce, "A
Manufacturable Five-Level Metal Fully Planarized 0.35-Micron Generation
Back-End-Of-The-Line (BEOL) for Logic and SRAM," Proceedings of the Fourteenth
International VMIC, 1997, pp. 25-30.
-
Novellus Concept Two High Density Plasma CVD Processing Guide, Rev. A,
Novellus Systems, Inc., 81 Vista Montana, San Jose, CA 95134, 1996, pp.
4.6-4.7.
-
S. Nag, G. A. Dixit, M. K. Jain, K. J. Taylor, S. Krishnan, L. M. Ting,
J. D. Luttmer, and R. H. Havemann, "Integration of ICP High-Density Plasma
Inter-Level Dielectric Films into a 0.35 µm CMOS Five-Level Interconnect
System," Proceedings of the Twelfth International VMIC, 1995, pp. 24-30.
-
T. B. Hook, A. Stamper, and D. Armbrust, "Sporadic Charging in
Interlevel Oxide Deposition in Conventional Plasma and HDP Deposition
Systems," Proceedings of the 2nd International Symposium on Plasma
Process-Induced Damage, American Vacuum Society, May 1997, pp. 149-152.
-
C.-K. Hu, K. P. Rodbell, T. D. Sullivan, K. Y. Lee, and D. P. Bouldin,
"Electromigration and Stress-Induced Voiding in Fine Al and Al-Alloy Thin-Film Lines," IBM J. Res. Develop. 39, No. 4, 465-497 (1995).
-
P. Weigand, H. Palm, E. W. Kiewra, and S. V. Nguyen, "Integration of
Dielectrics for 0.25 µm Metallization Levels: HDPCVD versus SACVD,"
Proceedings of the Fourteenth International VMIC, 1997, pp. 565-570.
-
K. Blumenstock, J. Theisen, P. Pan, J. Dulak, A. Ticknor, and T.
Sandwick, "Shallow Trench Isolation for Ultra-Large-Scale Integrated
Devices," J. Vac. Sci. Technol. B 12, No. 1, 54-58 (1994).
-
S. Nag and A. Chatterjee, "Shallow Trench Isolation for Sub-0.25 IC
Technologies," Solid State Technol. 40, No. 9, 129-136 (1997).
-
V. C. Patrick, H. W. Fry, V. S. Baer, and V. d. H. Wilbert, "HDPCVD
Films Enabling Shallow Trench Isolation," Semicond. Int. 20, No. 8, 179-186
(1997).
-
T. Usami, K. Shimokawa, and M. Yoshimaru, "Low Dielectric Constant
Interlayer Using Fluorine-Doped Silicon Oxide," Jpn. J. Appl. Phys. 33,
408-412 (1993).
-
T. Homma, Y. Murao, and R. Yamaguchi, "Flow Characteristics of SiOF
Films in Room Temperature Chemical Vapor Deposition Utilizing
Fluoro-Trialkoxy-Silane Group and Pure Water as Gas Sources," J. Electrochem.
Soc. 140, 3599-3603 (1993); "A Room Temperature Chemical Vapor Deposition SiOF
Film Formation Technology for the Interlayer in Submicron Multilevel
Interconnections," Ibid., pp. 687-689.
-
M. B. Anand, T. Matsuno, M. Murato, H. Shibata, M. Kakumu, K. Mori, K.
Otsuka, M. Takahashi, N. Kaji, M. Kodera, K. Itoh, R. Aoki, and M. Nagata,
"Fully Integrated Back End of the Line Interconnect Process for High
Performance ULSIs," Proceedings of the Eleventh International VMIC, 1994, pp.
15-21.
-
C. Falcony, J. C. Alonso, A. Ortiz, M. Garcia, E. P. Zironi, and J.
Rickards, "High Quality, High Deposition Rate SiO2 Films at Low Temperatures
Using Silicon Fluorides and Plasma Assisted Deposition Techniques," J. Vac.
Sci. Technol. A 11, 2945-2949 (1993).
-
M. T. Weise, S. C. Selbrede, L. J. Arias, and D. Carl,
"Characterization of Fluorinated Tetraethylorthosilicate Oxide Films Deposited
in a Low Pressure Plasma Enhanced Chemical Vapor Deposition Reactor," J. Vac.
Sci. Technol. A 15, No. 3, 1399-1402 (1997).
-
W. S. Yoo, R. Swope, and D. Mordo, "Plasma Enhanced Chemical Vapor
Deposition and Characterization of Fluorine Doped Silicon Dioxide Films," Jpn.
J. Appl. Phys. 36, No. 1, 267-275 (1997).
-
T. Matsuda, M. Shapiro, and S. Nguyen, "Dual Frequency Plasma CVD
Fluorosilicate Glass Deposition for 0.25 Micron Interlevel Dielectrics,"
Proceedings of the First International DUMIC, 1995, pp. 22-28.
-
M. Shapiro, S. Nguyen, and T. Matsuda, "Dual Frequency Plasma CVD
Fluorosilicate Glass Water Absorption and Stability," Proceedings of the First
International DUMIC, 1995, pp. 118-123.
-
V. L. Shannon and M. Z. Karim, "Study of the Material Properties and
Suitability of Plasma-Deposited Fluorine-Doped Silicon Dioxides for Low
Dielectric Constant Interlevel Dielectrics," Thin Solid Films 270, 498-502
(1995).
-
T. Fukuda, E. Sasaki, T. Hosokawa, K. Kato, and N. Kobayashi, "Highly
Reliable SiOF Film Formation Using High Density Plasma Containing Hydrogen,"
Proceedings of the Third International DUMIC, 1997,
pp. 41-48.
-
H. Yoshitaka, T. Tamura, Y. Inoue, M. Satoh, and J. Sakai, "Biased
Helicon-Plasma CVD of Low-k Dielectric for 0.2 Micron ULSI Metallization,"
Proceedings of the Third International DUMIC, 1997,
pp. 70-82.
-
M. Hayashi, K. Ohhira, H. Watatani, K. Suzuki, K. Koyama, and H. Yagi,
"High Density Plasma CVD Fluorosilicate Glass Gap-Filling for Sub-Half Micron
CMOS Devices," Proceedings of the Third International DUMIC, 1997, pp.
205-212.
-
S. V. Nguyen, M. J. Shapiro, T. Matsuda, D. Dobuzinsky, and C. T.
Dziobkowski, "Plasma Deposition Chemistry of Fluorinated Silicon Oxide
Films," Proceedings of the 12th International Symposium on Plasma Chemistry,
Vol. 4, J. V. Heberlein, D. W. Ernie, and J. T. Robert, Eds., IUPAC,
Minneapolis, August 21-25, 1995, pp. 1975-1980.
-
A. K. Stamper, V. McGahay, M. Shapiro, L. A. Miller, X. Tian, A.
Bryant, and L. A. Serianni, "Optimization of AlCu Wiring Delay in Advanced
CMOS Technology," Proceedings of the MRS Symposium on Low-Dielectric Constant
Materials II, Boston, December 2-3, 1996,
pp. 183-188.
-
J. Li, B. Fardi, M. O'Connor, D. Thach, M. Moinpour, and F. Moghadam,
"Defect Characterization in RTP Densified BPSG Films," Proceedings of the
First International DUMIC, 1995, pp. 124-130.
-
Y. Gobil, P. Fugier, Y. Morand, H. M'Saad, and T. Veyron, "High
Density Plasma CVD Phosphorous Silicon Glass for Pre-Metal Applications in
Sub-0.25 µm CMOS Technology," Proceedings of the First International DUMIC,
1995, pp. 108-115.
-
L. Q. Qian, S. Bothra, X. W. Lin, I. Harvey, M. Weling, and D.
Pramanik, "Integration of Oxides for Pre-Metal Dielectrics in 0.25 µm
Devices," Proceedings of the Fourteenth International VMIC, 1997, pp. 615-617.
-
S. Bothra, D. Pramanik, L. Q. Qian, I. Harvey, D. Baker, M. Weling, S.
Sethi, C. Gabriel, S. Sengupta, H. Sur, and X. W. Lin, "Integration of 0.25
µm Three and Five Level Interconnect System for High Performance ASIC,"
Proceedings of the Fourteenth International VMIC, 1997, pp. 43-48.
-
M. Bakli, L. Baud, H. M'Saad, D. Pique, and P. Rubinsohn, "Materials
and Processing for 0.25 µm Multilevel Interconnect," Microelectron. Eng.
(Netherlands) 33, No. 1-4, 178-188 (1997).
-
"Silicon Nitride for Protecting and Passivating Devices: Improving the
Radiation Resistance," Gmelin Handbook of Inorganic Chemistry, 8th Ed., R. J.
Meyer, E. H. E. Pietsch, A. Kotowski, and M. Betcke-Goehring, Ed.,
Springer-Verlag, New York, 1991, Ch. 6, pp. 80-98 and references therein.
-
D. G. Park, M. Tao, D. Li, A. E. Botchkarev, Z. Fan, Z. Wang, S. N.
Mohammad, A. Rockett, J. R. Abelson, and H. Morkoc, "Gate Quality Si3N4
Prepared by Low Temperature Remote Plasma Enhanced Chemical
Vapor Deposition for III-V Semiconductor-Based Metal-Insulator-Semiconductor
Devices," J. Vac. Sci. Technol. B 14, No. 4, 2674-2683 (1996).
-
D. E. Kotecki and J. D. Chapple-Sokol, "Hydrogen Incorporation in
Silicon Nitride Films Deposited by Remote Electron-Cyclotron-Resonance Chemical
Vapor Deposition," J. Appl. Phys. 77, No. 3, 1284-1293 (1995).
-
C. Ye, Z. Ning, M. Shen, H. Wang, and Z. Gan, "Dielectric Properties
of Silicon Nitride Films Deposited by Microwave Electron Cyclotron Resonance
Plasma Chemical Vapor Deposition at Low Temperature," Appl. Phys. Lett. 71,
No. 3, 336-337 (1997).
-
F. S. Pool, "Nitrogen Plasma Instabilities and the Growth of Silicon
Nitride by Electron Cyclotron Resonance Microwave Plasma Chemical Vapor
Deposition," J. Appl. Phys. 81, No. 6, 2839-2846 (1997) and references
therein.
-
C. M. M. Denisse, K. Z. Troost, J. B. Oude Elferink, F. H. P. M.
Habraken, W. F. van der Weg, and M. Hendriks, "Plasma-Enhanced Growth and
Composition of Silicon Oxynitride Films," J. Appl. Phys. 60, No. 7, 2536-2542
(1986).
-
A. C. Adams, VLSI Technology, S. M. Sze, Ed., McGraw-Hill Book Co.,
Inc., New York, 1988.
-
R. C. G. Swann, R. R. Mehta, and T. P. Cauge, "The Preparation and
Properties of Thin Film Silicon-Nitrogen Compounds Produced by a Radio
Frequency Glow Discharge Reaction," J. Electrochem. Soc.: Solid State Sci.
114, No. 7, 713-717 (1967).
-
H. Nagayoshi, M. Ikeda, M. Yamaguchi, T. Uematsu, T. Saitoh, and K.
Kamisako, "SiNx:H/SiO2 Double-Layer Passivation with Hydrogen-Radical
Annealing for Solar Cells," Jpn. J. Appl. Phys. 36, 5688-5692 (1997).
-
S.-M. Lee and K.-W. Lee, "The Optimization of Passivation Layout
Structure for Reliability Improvement of Memory Devices," Jpn. J. Appl. Phys.
35, No. 10, 5462-5465 (1996).
-
A. S. Chen, L. T. Nguyen, and S. A. Gee, "Effect of Material
Interactions During Thermal Shock Testing on IC Package Reliability," IEEE
Trans. Components, Hybrids, Manuf. Technol. 16, 932-939 (1993).
-
R. Foehringer, S. Golwalkar, S. Eskildsen, and S. Altimari, "Thin Film
Cracking in Plastic Packages--Analysis, Model and Improvements," Proceedings
of the 41st Electronic Components and Technology Conference, May 1991, pp.
759-765.
-
M. Moinpour, K. Mack, J. Cham, F. Moghadam, and B. Williams,
"Characterization of PECVD SixOyNz Films and Its Correlation to Device
Performance and Reliability," Proceedings of Materials Reliability in
Microelectronics IV, San Francisco, April 5-8, 1994, pp. 75-82.
-
C. M. M. Denisse, K. Z. Troost, F. H. P. M. Habraken, W. F. van der
Weg, and M. Hendriks, "Annealing of Plasma Silicon Oxynitride Films," J.
Appl. Phys. 60, No. 7, 2543-2547 (1986).
-
A. K. Stamper and S. L. Pennington, "Characterization of
Plasma-Enhanced Chemical Vapor Deposited
Nitride Films Used in Very Large Scale Integrated Applications," J.
Electrochem. Soc. 140, No. 6, 1748-1752 (1993).
-
S. V. Nguyen and S. U. Kim, "Hydrogen Diffusion Between Plasma
Deposited Silicon Nitride/Aluminum Interfaces Under Plasma Processing and Its
Effect on Field Effect Transistor Device Threshold Voltage (Vt) Shift," Fall
1985 Electrochemical Society Meeting, Ext. Abstract No. 228, pp. 437-438. Full
paper in Proceedings of Reduced Temperature Processing for VLSI, 86-5,
The Electrochemical Society, Inc., Pennington, NJ, pp. 533-544.
-
M. Kirchoff, D. Cote, M. Hauf, S. Nguyen, and W. Hoesler, "Hydrogen
Content and Permeability of Thin CVD Silicon Nitride and Silicon Oxynitride
Layers," Proceedings of the 192nd Meeting, The Electrochemical Society
International Symposium on Chemical Vapor Deposition, Paris, France, 1997, pp.
1230-1237.
-
D. L. Smith, "Controlling the Plasma Chemistry of Silicon Nitride and
Oxide Deposition from Silane," J. Vac. Sci. Technol. A 11, No. 4, 1843-1850
(1993).
-
J. W. Osenbach and S. S. Voris, "Sodium Diffusion in Plasma-Deposited
Amorphous Oxygen-Doped Silicon Nitride (a-SiON:H) Films," J. Appl. Phys. 63,
No. 9, 4494-4500 (1988).
-
A. Hashimoto, M. Kobayashi, T. Kamijoh, H. Takano, and M. Sakuta,
"Properties of PECVD SiOxNy Films as a Selective Diffusion Barrier," J.
Electrochem. Soc.: Solid State Sci. Technol. 133, No. 7, 1464-1467 (1986).
-
S. V. Nguyen, S. Fridmann, J. Abernathy, and M. Gibson, "The Bonding
Structure and Compositional Analysis of Plasma Enhanced and Low Pressure
Chemical Vapor Deposited Silicon Nitride and Oxynitride Films," in Emerging
Semiconductor Technology, D. Gupsta, Ed., American Society for Testing and
Material, V. STP 960, 1987, pp. 173-189.
-
S. V. Nguyen, "Effect of Si-H and N-H Bonds on Electrical Properties
of Plasma Deposited Silicon Nitride and Oxynitride Films," J. Electron. Mater.
16, No. 4, 275-281 (1987).
-
T. Ogawa, M. Kimura, T. Gotyo, T. Tomo, and T. Tsumori, "Practical
Resolution Enhancement Effect by New Complete Anti-Reflective Layer in KrF
Excimer Laser Lithography," Optical/Laser Microlithography VI, Proc. SPIE
1927, 263-274 (1993).
-
T. Gocho, T. Ogawa, M. Muroyama, and J. Sato, "Chemical Vapor
Deposition of Anti-Reflective Layer Film for Excimer Laser Lithography,"
Extended Abstracts, International Conference on Solid State Device and
Material, 1993, p. 570.
-
C. Nölscher, L. Mader, and M. Schneegans, "High Contrast Single Layer
Resists and Antireflection Layers--An Alternative to Multilayer Resist
Techniques," Advances in Resist Technology and Processing VI, Proc SPIE 1086,
242-250 (1989).
-
T. R. Pampalone, M. Camacho, B. Lee, and E. C. Douglas, "Improved
Photoresist Patterning Over Reflective Topographies Using Titanium Oxynitride
Antireflection Coatings," J. Electrochem. Soc. 136, No. 4, 1181-1185 (1989).
-
H. Dijkstra and C. Juffermans, "Optimization of Anti-Reflection Layers
for Deep UV Lithography," Optical/Laser Microlithography VI, Proc SPIE 1927,
275-286 (1993).
-
J. Sturtevant, S. Holmes, S. Knight, D. Poley, P. Rabidoux, L.
Somerville, T. McDevitt, A. Stamper, and E. Valentine, "Substrate
Contamination Effects
in the Processing of Chemically Amplified DUV Photoresists," Proc. SPIE 2197,
770-780 (1994).
-
S. V. Nguyen, D. Dobuzinsky, R. Gleason, and M. Gibson, "Plasma
Deposition and Characterization of Fluorinated Silicon Oxide," Proceedings of
the Ninth Symposium in Plasma Processing, 92-18, G. S. Mathad and D. W. Hess,
Eds., The Electrochemical Society, Inc., Pennington, NJ, 1992, pp. 565-574.
-
B. H. Jun, S. S. Han, J. S. Lee, Y. B. Kim, H. Y. Kang, Y. B. Koh, Z.
T. Jiang, B. S. Bae, and K. No, "Fluorinated Silicon Nitride Film for the
Bottom Antireflective Layer in Quarter Micron Optical Lithography," Semicond.
Sci. Technol. 12, No. 7, 921-926 (1997).
-
S. Poon, A. Gelatos, A. H. Perera, and M. Hoffman, "A Manufacturable
Chemical-Mechanical Polish Technology with a Novel Low-Permittivity Stop-Layer
for Oxide Polishing," Extended Abstracts, 1993 Symposium on VLSI Technology,
pp. 115-116.
-
B. Neureither, C. Basa, T. Sandwick, and K. Blumenstock,
"Boron Nitride and Silicon Boron Nitride Film and Polish Characterization,"
J. Electrochem. Soc. 140, 3607-3611 (1993).
-
D. R. Cote, D. M. Dobuzinsky, and S. V. Nguyen, "Selective Etching
Process for Boron Nitride Films," U.S. Patent 5,217,567, February 27, 1992; D.
Cote, S. Nguyen, D. Dobuzinsky, C. Basa, and B. Neureither, "High Selectivity
Magnetically Enhanced Reactive Ion Etching of Boron Nitride Films," J.
Electrochem. Soc. 141, 3456-3462 (1994).
-
W. F. Kane, S. A. Cohen, J. P. Hummel, B. Luther, and D. B. Beach,
"Use of SiBN and SiBON Films Prepared by Plasma Enhanced Chemical Vapor
Deposition from Borazine as Interconnection Dielectrics," J. Electrochem. Soc.
144, No. 2, 658-663 (1997).
-
S.-H. Kim, I.-H. Kim, and K.-S. Kim, "Preparation of Cubic Boron
Nitride Thin Film by the Helicon Wave Plasma Enhanced Chemical Vapor
Deposition," Appl. Phys. Lett. 69, No. 26, 4023-4025 (1996).
-
G. F. Cardinale, P. B. Mirkarimi, K. F. McCarty, E. J. Klaus, D. L.
Medlin, W. M. Clift, and D. G. Howitt, "Effects of Ambient Conditions on the
Adhesion of Cubic Boron Nitride Films on Silicon Substrates," Thin Solid Films
253, 130-135 (1994).
-
T. N. Nguyen, G. S. Oehrlein, and Z. A. Wienbergh, "Plasma Deposition
of Fluorocarbon," U.S. Patent 5,302,420, April 12, 1994.
-
K. Endo and T. Tatsumi, "Fluorinated Amorphous Carbon Thin Films Grown
by Plasma Enhanced CVD for Low Dielectric Constant Interlayer Dielectrics," J.
Appl. Phys. 78, 1370-1372 (1995).
-
S. Robles, L. Vasquez, M. Eizenberg, and F. Moghadam,
"Characterization of High Density Plasma Deposited
a-Carbon and a-Fluorinated Carbon Films for Ultra Low Dielectric
Applications," Proceedings of the Third International DUMIC, 1997, pp. 26-33.
-
S. J. Limb, K. K. Gleason, D. J. Edel, and E. F. Gleason, "Flexible
Fluorocarbon Wired Coating by Pulse Plasma Enhanced Chemical Vapor
Deposition," J. Vac. Sci. Technol. A 15, 1814-1818 (1997).
-
H. Kudo, S. Takeishi, R. Shinohara, and M. Yamada, "Characteristics of
Plasma C-F Films for Very Low-K Dielectrics," Proceedings of the Third
International DUMIC, 1997, pp. 85-92.
-
K. Endo, T. Tatsumi, Y. Matsubara, M. Iguchi, and T. Horiuchi,
"Improvement of the Thermal Stability of Low-k Fluorinated Amorphous Carbon
Layer by Controlling F/C Ratio," Proceedings of the Fourteenth International
VMIC, 1997, pp. 547-552 and references therein.
-
S. Takeishi, H. Kudo, R. Shinohara, M. Hoshino, S. Fukuyama, J.
Yamaguchi, and M. Yamada, "Plasma-Enhanced Chemical Vapor Deposition of
Fluorocarbon Films with High Thermal Resistance and Low Dielectric Constants,"
J. Electrochem. Soc. 144, No. 5, 1797-1802 (1997).
-
S. H. Kim, Y. S. Park, S. K. Jung, D. H. Kang, and J. W. Lee, "Effect
of Substrate State on the Formation of Diamond Film in a Low Temperature
Microwave-Plasma-Enhanced Chemical Vapor Deposition System," J. Vac. Sci.
Technol. A 13, No. 3, 1619-1623 (1995).
-
P. K. Bachman, "Microwave Plasma Chemical Vapor Deposition of
Diamond," in Handbook of Industrial Diamond and Diamond Films, M. A. Prelas,
G. Povovici, and L. K. Bigelow, Eds., Marcel Dekker Inc., New York, 1997, Ch.
11, pp. 821-850.
-
G. S. Oehrlein, Y. Zhang, D. Vender, and M. Haverlag, "Fluorocarbon
High Density Plasma. I. Fluorocarbon Film Deposition and Etching Using CF4 and
CHF3," J. Vac. Sci. Technol. A 12, No. 2, 323-332 (1994).
-
C. B. Labelle, S. J. Limb, K. K. Gleason, and J. A. Burns,
"Characterization of Pulse-Plasma Enhanced Chemical Vapor Deposited
Fluorocarbon Thin Film," Proceedings of the Third International DUMIC, 1997,
pp. 98-105.
-
S. J. Limb, C. B. Labelle, K. K. Gleason, D. J. Edell, and E. F.
Gleason, "Growth of Fluorocarbon Polymer Thin Film with High CF2 Fraction and
Low Dangling Bond Concentrations by Thermal Chemical Vapor Deposition," Appl.
Phys. Lett. 68, No. 20, 2810-2812 (1996).
-
A. Grill and V. Patel, "Wear Resistant Fluorinated Diamond Like
Carbon," Diamond Films & Technol. 6, 13-21 (1996).
-
G. Bronner, H. Aochi, M. Gall, J. Gambino, S. Gernhardt, E. Hammer, H.
Ho, J. Iba, H. Ishiuchi, M. Jaso, R. Kleinhenz, T. Mii, M. Narita, L. Nesbit,
W. Neumueller, A. Nitayama, T. Ohiwa, S. Parke, J. Ryan, T. Sato, H. Takato,
and S. Yoshikawa, "A Fully Planarized 0.25 µm CMOS Technology for 256Mbit
DRAM and Beyond," Digest of Technical Papers, Symposium on VLSI Technology,
1995, pp. 15-16.
-
B. Anderson, B. Behnke, J. Berman, M. Kobeissi, H. Huling, B. Langan,
J. Sui Yuan Lynn, and R. Morgan, "Using COO to Select Nitride PECVD
Clean Cycle," Semicond. Int. 16, No. 11, 86-88
(1993).
-
S. Edelstein, R. Davenport, and J. Nulman, "Using COO Modeling to
Optimize Productivity and Wafer Output of Sputtering Tools," Manufacturing
Process Control for Microelectronic Devices and Circuits, SPIE, Austin, TX,
October 1994, pp. 20-21.
-
The National Technology Roadmap for Semiconductors, Semiconductor
Industry Association, San Jose, CA, 1997, p. 170.
-
P. Singer, "1997: The Dawn of Quarter Micron Production," Semicond.
Int., pp. 50-56 (January 1997).
-
S. Myers, "The I300I/J300 Joint Guidance Agreement: Its Impact on the
300-mm Transition," Solid State Technol. 40, No. 10, 105-109 (October 1997).
-
F. Robertson, "300 mm Factory Trends," Solid State Technol. 40, No.
7, 101-103 (October 1997).
-
E. H. A. Granneman, "Trends in Contamination Control in IC Production
Tools," Solid State Technol., pp. 225-232 (July 1997).
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