Biographical sketches of authors
Donna R. Cote IBM Microelectronics Division, East
Fishkill facility, Hopewell Junction, New York 12533
(coted@us.ibm.com).
Ms. Cote is an Advisory Engineer at the IBM Advanced Semiconductor Technology
Center, working in advanced CMOS logic development. She joined IBM in 1990 at
the development laboratory in Essex Junction, Vermont. Ms. Cote currently has
responsibility for advanced (copper) BEOL integration and process development.
Previous assignments include plasma-enhanced and thermal low-temperature CVD
dielectric process development and integration for 0.35-µm-0.175-µ
m-generation DRAM in the development alliance with the Siemens and Toshiba
corporations, where she had been the insulator project team leader for the
past several years. Ms. Cote
received a B.S. and an M.S. in chemistry from Tufts University in 1978 and
1980, respectively. She has received IBM Invention Achievement Awards and has
published papers in the areas of dielectric deposition, plasma etching, and
process integration.
Son Van Nguyen IBM Systems Storage Division, San Jose facility, San Jose, California 95193
(son1@vnet.ibm.com).
Dr. Nguyen is a Senior Engineer in the IBM San Jose
air-bearing surface advanced process fabrication technology group.
He joined IBM in 1981 at its research and development laboratory in Essex
Junction, Vermont, and has worked on advanced chemical vapor deposition and
etching processes, plasma- and laser-based processes, surface tribology, and
fabrication technology for both silicon integrated circuits and computer disk
storage applications. Dr. Nguyen received a B.A. in chemistry in 1978 from the
State University of New York at Plattsburgh, and a Ph.D. in solid-state
chemistry in 1981 from Brown University. In 1980, he worked at the Exxon
Research and Engineering Laboratory on catalysis for coal gasification. Dr.
Nguyen has more than 44 patents issued and filed, and he has received twelve
IBM Invention Achievement Awards. He has published and presented more than 88
papers in various technical journals and conferences.
Anthony K. Stamper IBM Microelectronics Division, Burlington facility, Essex Junction, Vermont 05452
(astamper@us.ibm.com).
Dr. Stamper is a Senior Engineer
in the IBM advanced CMOS logic technology development organization. He joined
IBM in 1991 in Essex Junction, Vermont, and has also held assignments in the
Advanced Semiconductor Technology Center at East Fishkill, New York. He is
currently responsible for metal interconnect integration in the IBM advanced
logic (copper) development program in Essex Junction. Dr. Stamper's previous assignments
have involved premetal and intermetal dielectric process development and
integration for 0.50-µm-0.25-µm-generation CMOS logic and DRAM circuits.
In addition, he has chaired the IBM Low Temperature Insulator Strategic
Equipment Council and Technology Leader Committee focus teams since 1995. He
received a B.S. degree in electrical engineering from the University of
Connecticut in 1987 and M.S. and Ph.D. degrees in electrical and computer
engineering from Carnegie Mellon University in 1989 and 1991, respectively. Dr.
Stamper is the author of a number of patents and papers on metal interconnect
integration and process development.
Douglas S. Armbrust
IBM Microelectronics Division, Burlington facility, Essex Junction, Vermont
05452
(armbrusd@us.ibm.com).
Mr. Armbrust is a Process Engineer in the CMOS
logic/DRAM development program. He received a B.S. in materials science and
engineering from Pennsylvania State University. In 1995, he joined IBM in Essex
Junction, Vermont, where he worked on PECVD, SACVD, and HDP CVD development and
integration. Mr. Armbrust has published papers in the area of dielectric CVD
process development and integration.
Dirk Tobben
Siemens Microelectronics Inc., East Fishkill facility, Hopewell Junction, New York 12533
(dtobben@dda.siemens.com).
Dr. Tobben is a Process Engineer in the Thin
Films and Chemical Mechanical Polishing Department in the IBM-Siemens DRAM
Development Alliance. His present responsibilities focus on insulator
deposition and integration, specifically regarding advanced FEOL and low-k BEOL
processes for 64MB-1Gb DRAM applications. He received M.S. and Ph.D. degrees
in semiconductor physics from the Technical University of Munich, Germany, in
1992 and 1995, respectively. Dr. Tobben joined Siemens in 1995 and has since
been involved in projects on organic and inorganic spin-on materials as well as
CVD deposition techniques. He is a coauthor of several publications on those
subjects and is a member of the German Physical Society.
Richard A. Conti
IBM Microelectronics Division, East Fishkill facility, Hopewell Junction, New York 12533
(conti@us.ibm.com).
Mr. Conti is an Advisory Engineer in the
Thin Films and Chemical Mechanical Polishing Department in the IBM-Siemens DRAM
Development Alliance. He joined IBM in 1984 at the development laboratory in
East Fishkill and has worked in the fields of advanced CVD (chemical vapor
deposition), analysis and design of plasma-enhanced and thermal chemical vapor
deposition processes, and sputter deposition. Mr. Conti received a B.S. in
chemical engineering from the Polytechnic Institute of New York in 1983 and an
M.S. in chemical engineering practice from the Massachusetts Institute of
Technology in 1984. He has received several IBM Invention Achievement Awards
and several IBM informal awards for contributions in the area of CVD. Mr. Conti
is also the author of several papers on the subjects of reactor design and
deposition of CVD dielectrics.
Gill Yong Lee
Siemens Microelectronics Inc., East Fishkill facility, Hopewell Junction, New York 12533
(v2ti321@dda.siemens.com).
Mr. Lee is a Lead Engineer in the Thin Films and
Chemical Mechanical Polishing Department in the IBM-Siemens DRAM Development
Alliance. He is responsible for plasma-enhanced and thermal low-temperature CVD
processes for DRAM applications. He received a B.S. in ceramic engineering in
1988 from Yonsei University in Seoul, Korea, and an M.S. in materials science
and engineering in 1991 from POSTECH in Pohang, Korea. Before joining Siemens
in 1996, he was a Process Development Engineer for planarization and dielectric
deposition in the Semiconductor Research and Development Laboratory at Hyundai
Electronics. He is the author of a number of patents and papers on the subject
of CVD dielectrics.
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