IBM Skip to main content
  Home     Products & services     Support & downloads     My account  
  Select a country  
Journals Home  
  Systems Journal  
Journal of Research
and Development
  ·  Current Issue  
  ·  Recent Issues  
  ·  Papers in Progress  
  ·  Search/Index  
  ·  Orders  
  ·  Description  
  ·  Patents  
  ·  Recent publications  
  ·  Author's Guide  
  Staff  
  Contact Us  
IBM Journal of Research and Development  
Volume 43, Numbers 1/2, 1999
Plasma processing
 Table of contents: arrowHTML arrowASCII   This article: arrowHTML arrowASCII
arrowCopyright info
   

Plasma-etching processes for ULSI semiconductor circuits - References

by M. Armacost, P. D. Hoh, R. Wise, W. Yan, J.J. Brown, J. H. Keller, G. A. Kaplita, S. D. Halle, K. P. Muller, M. D. Naeem, S. Srinivasan, H. Y. Ng, M. Gutsche, A. Gutmann, and B. Spuler

References

  1. Plasma Etching, D. M. Manos and D. L. Flamm, Eds., Academic Press, Inc., New York, 1989.
  2. M. A. Lieberman and R. A. Gottscho, "Design of High Density Plasma Sources for Materials Processing," in Physics of Thin Films, M. Francombe and J. Vossen, Eds., Academic Press, Inc., New York, 1993.
  3. L. Nesbit, J. Alsmeier, B. Chen, J. DeBrosse, P. Fahey, M. Gall, J. Gambino, S. Gernhardt, H. Ishiuch, R. Kleinhenz, J. Mandelman, T. Mii, M. Morikado, A. Nitayama, S. Parke, H. Wong, and G. Bronner, IEDM Tech. Digest, p. 627 (1993).
  4. J. Gambino, T. Ohiwa, D. Dobuzinsky, M. Armacost, S. Yoshikawa, and B. Cunningham, VMIC Proc., p. 558 (1995).
  5. L. M. Lowenstein and C. M. Tipton, J. Electrochem. Soc. 128, 1389 (1991).
  6. C. P. Ausschnitt, A. C. Thomas, and T. J. Wiltshire, IBM J. Res. Develop. 41, No. 1, 21 (1997).
  7. M. A. Lieberman and A. J. Lichtenberg, Principles of Plasma Discharges and Materials Processing, Wiley, New York, 1994.
  8. N. Fujiwara, S. Ogino, T. Maruyama, and M. Yoneda, Plasma Sources Sci. Technol. 5, No. 2, 126 (1996).
  9. S. Samukawa and T. Mieno, Plasma Sources Sci. Technol. 5, No. 2, 132 (1996).
  10. K. Kurihara and M. Sekine, Plasma Sources Sci. Technol. 5, No. 2, 121 (1996).
  11. T. N. Ahn, K. Nakamura, and H. Sugai, Plasma Sources Sci. Technol. 5, No. 2, 139 (1996).
  12. T. Shibayama, H. Shindo, and Y. Horiike, Plasma Sources Sci. Technol. 5, No. 2, 254 (1996).
  13. M. Sekine, H. Hayashi, H. Tamura, and K. Kurihara, Paper PS1-WeA1, presented at the 43rd National Symposium of the American Vacuum Society, Philadelphia, 1996.
  14. N. Fujiwara, T. Maruyama, S. Ogino, and M. Yoneda, Jpn. J. Phys. 36, 2502 (1997).
  15. H. Arimoto, T. Kamata, and K. Hashimoto, FUJITSU Sci. Tech. J. 32, No. 1, 136 (1996).
  16. T. Kinoshita, M. Hane, and J. P. McVittie, proceedings of the 11th International Symposium on Plasma Processes, 1996, p. 49.
  17. J. Arnold and H. Sawin, Appl. Phys. 70, No. 10, 5314 (1991).
  18. J. Hahm, K. Chi, C. Jung, Y. Koh, and M. Y. Lee, Jpn. J. Phys. 36, 2450 (1997).
  19. A. T. Holmes, Plasma Sources Sci. Technol. 5, 453 (1996).
  20. T. Fukasawa, A. Nakamura, H. Shindo, and Y. Horiike, Jpn. J. Appl. Phys. Pt. 1 33, No. 4B, 2139 (1994).
  21. T. Tanaka, N. Hasegawa, H. Shiraishi, and S. Okazaki, J. Electrochem. Soc. 137, 3900 (1990).
  22. T. A. Brunner, C. F. Lyons, and S. S. Miura, J. Vac. Sci. Technol. B 9, 3418 (1991).
  23. S. Fang, C. Chiang, D. Fraser, B. Lee, P. Keswick, M. Chang, and K. Fung, J. Vac. Sci. Technol. A 14, No. 3, 1092 (1996).
  24. M. L. Passow, M. D. Armacost, M. J. Powers, and T. Cotler, Paper PS-MoA6, presented at the 43rd National Symposium of the American Vacuum Society, Philadelphia, 1996.
  25. M. J. Buie, A. M. Joshi, and J. Regis, Proceedings of the Eleventh International Symposium on Plasma Processing 96, No. 12, 469 (1996).
  26. A. M. Barklund and H. O. Blom, J. Vac. Sci. Technol. A 11, No. 4, 1226 (1993).
  27. Proceedings of the High Density Plasma Symposium, 40th National Symposium of the American Vacuum Society, M. Barnes, Ed., San Francisco, 1993.
  28. H. J. Tao, C. S. Tsai, and S. C. Sun, VMIC Proc., p. 669 (1997).
  29. Y. Zhang, G. S. Oehrlein, and F. H. Bell, J. Vac. Sci. Technol. A 14, No. 4, 2127 (1996).
  30. J. A. O'Neill and J. Singh, J. Appl. Phys. 77, No. 2, 497 (1995).
  31. K. G. Donohoe, Paper PS1-WeA3, presented at the 43rd National Symposium of the American Vacuum Society, Philadelphia, 1996.
  32. S. Arai, K. Tsujimoto, and S. Tachi, Jpn. J. Appl. Phys. 31, 2011 (1992).
  33. T. Ichiki, Y. Chinzei, Y. Horiike, H. Shindo, N. Ikegami, and M. Sekine, Paper PS-MoA5, presented at the 43rd National Symposium of the American Vacuum Society, Philadelphia, 1996.
  34. R. S. Wise, M. D. Armacost, M. P. Passow, S. Molis, and L. Tai, Paper PS2-WeM8, presented at the 44th National Symposium of the American Vacuum Society, San Jose, 1997.
  35. S. Kadomura, "Dry Etching Method for Selectively Etching Silicon Nitride Existing on Silicon Dioxide," U.S. Patent 4,654,114, 1987.
  36. R. Chun and J. Keswick, P., Eur. Semicond. 16, No. 4, 17 (1994).
  37. proceedings of the Second International Symposium on Microstructure and Microfabricated Systems, D. Denton, P. J. Hesketh, and H. Hughes, Eds., ECS Proc. 95-27, 266-271 (1995).
  38. K. P. Muller, B. Flietner, C. L. Hwang, R. L. Kleinhenz, T. Nakao, R. Ranade, Y. Tsunashima, and T. Mii, IEDM Tech. Digest, p. 507 (1996).
  39. K. P. Muller and K. Roithner, Proc. Electrochem. Soc. 95-27, 266 (1995).
  40. K. P. Muller, K. Roithner, and H.-J. Timme, J. Microelectron. Eng. 27, 457 (1995).
  41. P. A. Heimann, J. Electrochem. Soc. 132, 2003 (1985).
  42. T. H. Fedynyshyn, G. W. Grynkewich, and T. Ma, J. Electrochem. Soc. 134, 2580 (1987).
  43. K. M. Eisele, J. Electrochem. Soc. 128, 123 (1981).
  44. T. Syau, B. J. Balign, and R. Hamaker, J. Electrochem. Soc. 138, 3076 (1991).
  45. T. Horiike and M. Shibagaki, proceedings of the 7th Conference on Solid State Devices, Tokyo, 1975; suppl. to Jpn. J. Appl. Phys. 15, 13 (1976); T. Horiike and M. Shibagaki, in Semiconductor Silicon 1977, H. R. Huff and E. Sirtle, Eds., The Electrochemical Society, Princeton, NJ, 1979.
  46. Y. Horiike, in Applications of Plasma Processes to VLSI Technology, T. Sugano, Ed., Wiley Interscience, New York, 1985, p. 138.
  47. N. Hayasaka, H. Okano, and Y. Horiike, Solid State Technol. 4, 127 (1988).
  48. J. W. Shon, E. Meeks, R. S. Larson, C. A. Fox, S. R. Vosen, and D. Buchenauer, in "Results from Modeling and Simulation of Chemical Downstream Etch Systems," Sandia Report SAND96-8241, May 1996.
  49. C. J. Mogab, A. C. Adams, and D. L. Flamm, J. Appl. Phys. 49, 3976 (1978).
  50. N. Nishino, N. Hayasaka, K. Horioka, J. Shiozawa, S. Nadahara, N. Shooda, Y. Akama, A. Sakai, and H. Okano, J. Appl. Phys. 74, 1349 (1993).
  51. H. Okano, N. Hayasaka, N. Nishino, K. Horioka, and T. Arikado, Extended Abstracts, 20th Conference on Solid State Devices and Materials, Tokyo, 1988, p. 549.
  52. S. Suto, N. Hayasaka, H. Okano, and Y. Horiike, J. Electrochem. Soc. 136, 2032 (1989).
  53. C. J. Mogab, J. Electrochem. Soc.: Solid State Sci. Technol. 124, 1262 (1977).
  54. D. G. Chesebro, J. W. Adkisson, L. R. Clark, S. N. Eslinger, M. A. Faucher, S. J. Holmes, R. P. Mallette, E. J. Nowak, E. W. Sengle, S. H. Voldman, and T. W. Weeks, IBM J. Res. Develop. 39, No. 1, 189 (1995).
  55. J. Dulak, B. J. Howard, and C. H. Steinbruchel, J. Vac. Sci. Technol. A 9, No. 3, 775 (1991).
  56. G. C. Schwartz, L. B. Rothman, and T. J. Schopen, J. Electrochem. Soc. 162, 464 (1979).
  57. Y. H. Lee and M. M. Chen, J. Appl. Phys. 54, No. 10, 5966 (1983).
  58. K. Tsujimoto, T. Kumihashi, and S. Tachi, Appl. Phys. Lett. 63, 1915 (1993).
  59. H. Y. Hg, J. W. Adkisson, A. Miller, G. Matteson, and T. Wu, presented at the Annual SEMICON Conference on Test, Assembly, and Packaging, 1996.
  60. P. D. Hoh, T. Wu, V. Grewal, B. Spuler, and J. Bowers, "Fine Feature 0.25 µm W6/Polysilicon Gate Etching with an ICP Plasma Source," presented at the Semicon West LAM Research Technical Symposium, San Francisco, 1997.
  61. P. D. Hoh, "Etching with HCl and Cl2," European Patent 9707458.8-1270, 1997.
  62. S. Mayumi, J. Electrochem. Soc. 137, 2534 (1990).
  63. D. Hess and R. Bruce, Dry Etching for Microelectronics, R. Powell, Ed., Elsevier, New York, 1984.
  64. V. Brusic, G. S. Frankel, C.-K. Hu, M. M. Plechaty, and B. M. Rush, Corrosion 47, No. 1, 35 (1991).
  65. M. Naeem, V. Grewal, B. Spuler, J. Hanebeck, M. Narita, and C. Radens, Proceedings of the 11th International Symposium on Plasma Processing 96-12, 267 (1996).
  66. V. Brusic and C. H. Yang, proceedings of Plasma Processing XI, Los Angeles, 1996 (ISBN 1 56677 164 1).
  67. M. Schiatti, "Metal Etch Process Characterization in a TCPTM 9600 for VLSI Devices," presented at the Meeting on Thin Film Challenges: Device Requirements for the '90s, San Francisco, July 1994.
  68. C. H. Yang, V. Grewal, J. Lany, and J. Yang, "Metal Etch Process Characterization in a TCP 9600 for VLSI Devices," presented at the Meeting on Thin Film Challenges: Device Requirements for the '90s, San Francisco, July 1994.
  69. T. Suzuki, H. Kitagawa, K. Yamada, and M. Nagoshi, J. Vac. Sci. Technol. B 10, No. 2, 596 (1992).
  70. M. Sato and Y. Arita, Extended Abstracts, International Conference on Solid State Devices and Materials, Yokohama, 1991, p. 759.

About IBM | Privacy | Legal | Contact