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Low-temperature Si and Si:Ge epitaxy by ultrahigh-vacuum/chemical vapor deposition: Process fundamentals

 Award plaque by B. S. Meyerson

This paper is an overview of work at the IBM Thomas J. Watson Research Center on the chemical and physical considerations underlying the development of a low-temperature chemical vapor deposition process, designated ultra high-vacuum/chemical vapor deposition (UHV/CVD). The origins of the rigorous vacuum and chemical purity requirements of the process are discussed. Operating in the range of 500°C, the process has made it possible to explore the use, in silicon-based devices and atomic-length-scale structures, of a number of metastable materials in the Si:Ge:B system. Also discussed is associated experimental work on the fabrication of high-speed heterojunction bipolar transistors and high-mobility two-dimensional hole-gas structures.

Originally published:

IBM Journal of Research and Development, Volume 34, Issue 6, pp. 806-815 (1990).

Significance:

This paper describes the development of a process by which epitaxial silicon layers of high crystalline perfection form during chemical vapor deposition of silicon in an ultrahigh-vacuum system. Boron (B) or germanium (Ge) additions are uniformly distributed in the epitaxial silicon films at concentrations well beyond previously accepted ranges. The thin SiGe films show ideal film behavior. By the use of this process technology, heterojunction bipolar transistors are formed with thin SiGe bases which have set new speed records in bipolar devices. The devices have reduced electronic noise and operate at lower power than bipolar transistors with a silicon base. In 2005, “high-speed silicon germanium devices” were among the innovations cited when IBM was presented with the 2004 U.S. National Medal of Technology.

Comments:

See the 2004 National Medal of Technology awarded to the IBM Microelectronics Division in 2005 and the IBM Press Release of the announcement.


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