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Advancing the state of the art in high-performance logic and array technology
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by K. H. Brown,
D. A. Grose,
R. C. Lange,
T. H. Ning,
and P. A. Totta |
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IBM Journal of Research and Development, Volume 36, Issue 5, pp. 821-828 (1992).
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This paper describes the design and modifications made to optimize bipolar technology for use in IBM Enterprise System/9000® mainframe computers. The resulting device, code-named ATX-4 and constructed with 1-μm ground rules, was a high-reliability, high-performance bipolar transistor with low power and planarized interconnections. Despite the advances made to the bipolar transistor technology, a decision was made to switch from bipolar to CMOS transistors in IBM mainframe computers because of the greater reliability of CMOS and lower system costs. [For details, see “IBM S/390 Parallel Enterprise Servers G3 and G4,” by G. S. Rao, T. A. Gregg, C. A. Price, C. L. Rao, and S. J. Repka, IBM Journal of Research and Development 41, No. 4/5, 397-403 (1997).]
An important alternative application for bipolar transistors with many of the ATX-4 features emerged at this time. A large market for high-speed SiGe-based heterogeneous bipolar transistors and SiGe BiCMOS developed for high-end telecommunications equipment. In 2005, “high-speed silicon germanium devices” were among the innovations cited when IBM received the 2004 U.S. National Medal of Technology.
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See the 2004 National Medal of Technology awarded to the IBM Microelectronics Division in 2005 and the IBM Press Release of the announcement.
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