A Field Effect Transistor based on the Mott Transition in a Molecular Layer

C. Zhou, D.M. Newns, J.A. Misewich and P.C. Pattnaik

IBM T.J. Watson Research Center, Yorktown Heights, NY

We analyze a proposed FET-like switching device, the Mott transition field effect transistor, operating on a novel principle, the Mott metal-insulator transition. The device has FET-like characteristics with a low "ON" impedance and high "OFF" impedance. Function of the device is feasible down to nanoscale dimensions. Implementation with a class of organic charge transfer complexes is proposed.

For further information:

D.M. Newns, J.A. Misewich and C. Zhou, "Nanoscale Mott-transition Molecular Field Effect Transistor", Patent submitted May 22 1996, Disc. # YO996-069.
C. Zhou, D.M. Newns, J.A. Misewich and P.C. Pattnaik, "A Field Effect Transistor based on the Mott Transition in a Molecular Layer", Applied Physics Letters, in press.
J.B. Torrance, Acc. Chem. Res. 12, 79 (1979).

last update: 1996 October 31

dmnewns@watson.ibm.com