DAMOCLES simulation results are useful in two ways:

1. in enhancing the understanding of physical processes governing device behavior;
2. in generating reliable device results that can form a standard against which other modeling approaches (containing more simplified physics) can be compared.

Regarding item 1 above, the tabs at left provide links to some examples of basic physics issues which have benefited from DAMOCLES. Note that the pages linked to these examples are of a technical content (and also of shear 'size') somewhat 'heavier' than the other pages in this site.

• Scattering in Si discusses the determination of the energy dependence - up to high kinetic energies - of the electron-phonon scattering and pair-production rates in Si. Given the wealth of efforts devoted to the study of charge transport in Si, dating back to the late 1940s, this is probably the major accomplishment of DAMOCLES, from both a scientific and technological perspective.
• Si channels summarizes our study of the effective mobility in Si inversion layers, quantity of relevance when studying the switching speed of devices. This study also bears consequences on the determination of the low-energy intravalley deformation potentials.
• Injection into Si$O$₂ deals with the investigations of the various physical issues which control electron injection from silicon channels into the silicon dioxide gate insulator of Si MOSFETs. Reliability issues in Si VLSI depend crucially on these phenomena.
• Low-bias effects explains why in Si FETs impact ionization is observed even at sub-band-gap biases and why the ionization process exhibits an anomalous dependence on temperature. This is part of a more general question concerning the role played by hot-carrier effects as VLSI drives towards lower-voltage technologies.
• III-V devices discusses a model-comparison of sub-tenth-micron MOSFETs based on a variety of semiconductors (n-Ge, n-Si, p-Si, n-type GaAs, InAs, InP, and InGaAs) showing that - as far as large-signal, VLSI logic applications are concerned - the speed behavior of sub-0.1µm III-V devices does not provide any advantage with respect to Si devices.

Applications of DAMOCLES to the simulation of electron devices are accessible from the "Devices" tab on the navigation bar at left.