Web sites on Monte Carlo simulation of electronic transport in semiconductors A general overview of Monte Carlo methods by the Computational Science Education Project More on Monte Carlo methods in general, from Los Alamos National Laboratory Monte Carlo methods (in general) from the section on Mathematics of the WWW Virtual Library: Random Numbers and Monte Carlo Methods Complete tutorials specifically related to the application of the Monte Carlo method to the problem of electronic transport in semiconductors, by the National Center for Computational Electronics (NCCE) at the University of Illinois at Urbana-Champaign. We have already made ample use of these pages with hyperlinks from the main text of the DAMOCLES pages. (See also the DESCARTES project home page). A step-by-step description of a self-consistent Monte Carlo program for the simulation of silicon electron devices, MATLAB, developed at Kungl. Tekniska Högskolan (KTH) / Mid-Sweden University, also providing a Short Introduction to Monte Carlo Simulation. Here follows an incomplete and somewhat unordered list of sites where research on/application of Monte Carlo simulation of electronic transport in semiconductors is conducted: Stanford University, TCAD Research Beckman Institute at the University of Illinois at Urbana-Champaign, Computational Electronics Group Georgia Institute of Technolgy, Computational Electronics Group Arizona State University, Nanostructure Research Group University of Texas at Austin, Microelectronics Research Center and the MOMENTS Monte Carlo object library Purdue University, PUNCH Network Computing Hubs Rensselaer Polytechnic Institute, Basic Semiconductor Equations University of Massachusetts at Amherst, MAGNUMS North Carolina State University, Solid State Electronics Laboratory University of Notre Dame, Electronic Materials and Devices University of Michigan, Solid State Electronics Laboratory Wayne State University, Laboratory for Materials, Device and Circuit Simulations Lawrence Livermore National Laboratory, Microtechnology Center Lucent Technologies, Bell Laboratories, Semiconductor process and device simulation Eindhoven University of Technology, Semiconductor Physics Technical University of Munich, Walter Schottky Institut, Institute for Theoretical Semiconductor Physics The Fraunhofer Institute for Applied Physics Technical University of Vienna, Institute for Microelectronics, Device Simulation University of Lille, Electric, Electronic, and Optoelectronic Engineering University of Bologna, DEIS, Monte Carlo Device Simulation (the BEBOP program) University of Birmingham, The Electronic Materials and Devices Group, Modelling of Hot Carrier Effects in MOSFETs and Determination of Hot Carrier Transport Parameters University of Essex, Semiconductor Device Modelling University of Glasgow, Device Modelling Group University of Leeds, Monte Carlo simulations Technical University of Budapest, Department of Electron Devices Slovak Academy of Sciences, Institute of Electrical Engineering, Department of Theory of Semiconductor Microstructures Semiconductor Physics Institute, Vilnius, Theoretical Solid-State Physics Laboratory ETH, VEGAS, Monte Carlo Simulation of Submicron Devices Integrated Systems Engineering AG, Multi-Dimensional Full-Bandstructure Ensemble Monte Carlo Device Simulator University of Osaka, Hamaguchi Lab University of Tokyo, Asada Lab University of Tsukuba, Micro-Electronics Lab University of Aizu, Computer Solid State Physics Laboratory Pohang University of Science and Technology (POSTECH), High-Speed Electron Devices Lab Seoul National University, Inter-University Semiconductor Research Center Fujitsu, Electron Devices and Materials Laboratory and the FALCON program NEC, Research and Development NTT, Basic Research Laboratories Toshiba, Research and Development Center damoclesNO-SPAM@watson.ibm.com (last updated: July 30,1999)