Skip to main content
[ IBM Research ]
[ Find ] [ News ] [ Products ] [ Support ] [ Business solutions ] [ Inside IBM ] [ Interest groups ]
DAMOCLES home Overviews Physics Devices References and links Publications Related sites Damocles the Greek
DAMOCLES: References

Many of our recent articles are available online prior to publication in the IBM Research CyberDigest, as indicated by the hyperlinks after each entry for which abstract and/or postscript versions are available.

  1. S. E. Laux and M. V. Fischetti, "Monte Carlo Simulation of Submicron Si n-MOSFETs at 77 and 300 K", IEEE Electron Device Letters, vol. 9, No. 9, pp. 467-469, September, 1988.
  2. M. V. Fischetti and S. E. Laux, "Monte Carlo Analysis of Electron Transport in Small Semiconductor Devices Including Band-Structure and Space-Charge Effects", Phys. Rev. B, vol. 38, pp. 9721-9745, 15 November, 1988.
  3. M. V. Fischetti and S. E. Laux, "Monte Carlo Simulation of Submicron Si MOSFETs", Simulation of Semiconductor Devices and Processes, vol. 3, G. Baccarani and M. Rudan Eds. (Technoprint, Bologna, 1988), pp. 349-368.
  4. M. V. Fischetti, S. E. Laux and D. J. DiMaria, "Physics of Hot-Electron Si-MOSFETs Degradation: Can We Understand It?", Applied Surface Science, vol. 39, pp. 578-596, 1989.
  5. W. Lee, S. E. Laux, M. V. Fischetti and D. D. Tang, "Monte Carlo Simulation of Non-Equilibrium Transport in Ultra-Thin Base Si Bipolar Transistors", Proceedings, 1989 IEDM, pp. 473-476, December 1989.
  6. M. V. Fischetti and S. E. Laux, "Are GaAs MOSFETs Worth Building? A Model-Based Comparison of Si and GaAs n-MOSFETs", Proceedings, 1989 IEDM, pp. 481-484, December 1989.
  7. M. V. Fischetti, S. E. Laux and W. Lee, "Monte Carlo Simulation of Hot-Carrier Transport in Real Semiconductor Devices", Solid-State Electronics", vol. 32, No. 12, pp. 1723-1729, December 1989.
  8. S. E. Laux, M. V. Fischetti and D. J. Frank, "Monte Carlo Analysis of Semiconductor Devices: The DAMOCLES Program", IBM Journal of Research and Development, vol. 34, pp`. 466-494, July 1990.
  9. D. C. Cole, E. M. Buturla, S. S. Furkay, K. Varahramyan, J. Slinkman, J. A. Mandelman, D. P. Foty, O. Bula, A. W. Strong, J. W. Park, T. D. Linton, Jr., J. B. Johnson, M. V. Fischetti, S. E. Laux, P. E. Cottrell, H. G. Lustig, F. Pileggi, D. Katcoff, "The Use of Simulation in Semiconductor Technology Development", Solid State Electronics, vol. 33, pp. 591-623, July 1990.
  10. E. F. Crabbé, J. M. C. Stork, G. Baccarani, M. V. Fischetti and S. E. Laux, "The Impact of Non-Equilibrium Transport on Breakdown and Transit Time in Bipolar Transistors", Proceedings, 1990 IEDM, pp. 463-466, December 1990.
  11. S. Tiwari, M. V. Fischetti and S. E. Laux, "Transient and Steady-State Overshoot in GaAs, InP, Ga0.47 In0.53As and InAs Bipolar Transistors", Proceedings, 1990 IEDM, pp. 435-438, December 1990.
  12. S. E. Laux and M. V. Fischetti, "The DAMOCLES Monte Carlo Device Simulation Program", Computational Electronics, K. Hess, J. P. Leburton, and U. Ravaioli Eds. (Kluwer Academic, Boston, 1991), pp. 87-92.
  13. M. V. Fischetti, "Monte Carlo Simulation of Transport in Technologically Significant Semiconductors of the Diamond and Zinc-Blende Structures - Part I: Homogeneous Transport", IEEE Transactions on Electron Devices, vol. 38, No. 3, pp. 634-649, March 1991.
  14. M. V. Fischetti and S. E. Laux, "Monte Carlo Simulation of Transport in Technologically Significant Semiconductors of the Diamond and Zinc-Blende Structures - Part II: Submicron MOSFETs", IEEE Transactions on Electron Devices, vol. 38, No. 3, pp. 650-660, March 1991.
  15. S. E. Laux and M. V. Fischetti, "Numerical Aspects and Implementation of the DAMOCLES Monte Carlo Device Simulation Program", Monte Carlo Device Simulation: Full Band and Beyond, Karl Hess Ed. (Kluwer Academic, Boston, 1991), pp. 1-26.
  16. S. E. Laux and M. V. Fischetti, "Simulation of Small Semiconductor Devices Using a Coupled Monte Carlo-Poisson Approach", Proceedings of the 1991 IEEE/Cornell University Conference on Advanced Concepts in High Speed Semiconductor Devices and Circuits, Ithaca, NY, 338-346, August 1991.
  17. M. V. Fischetti and S. E. Laux, Reply to "Comments on 'Monte Carlo Simulation of Transport in Technologically Significant Semiconductors of the Diamond and Zinc-Blende Structures - Part II: Submicronmeter MOSFETs'", IEEE Trans. Elec. Dev., vol. 39, No. 3, March 1992, p. 749.
  18. W. Lee, S. E. Laux, M. V. Fischetti, G. Baccarani, A. Gnudi, J. A. Mandelman, J. M. C. Stork and E. F. Crabbé, "Numerical Modeling of Advanced Si Devices", IBM Journal of Research and Development, vol. 36, No. 2, pp. 208-232, March 1992.
  19. M. V. Fischetti and S. E. Laux, "Monte Carlo Study of Electron Transport in Silicon Inversion Layers", Proceedings, 1992 IEDM, pp. 721-724, December 1992.
  20. D. J. Frank, S. E. Laux and M. V. Fischetti, "Monte Carlo Simulation of a 30 nm Dual-Gate MOSFET: How Short Can We Go?", Proceedings, 1992 IEDM, pp. 553-556, December 1992.
  21. M. V. Fischetti and S. E. Laux, "Monte Carlo Study of Electron Transport in Silicon Inversion Layers", Phys. Rev. B, vol. 48, pp. 2244-2274, 15 July 1993.
  22. M. V. Fischetti, S. E. Laux and D. J. Frank, "Monte Carlo Simulation of Small Silicon Field-Effect Transistors", in Extended Abstracts of the 1993 Int. Conf. on Solid-State Devices and Materials, (Komiyama Printing, Tokyo, 1993), pp. 255-257.
  23. D. J. Frank, S. E. Laux and M. V. Fischetti, "Monte Carlo Simulations of p- and n-Channel Dual-Gate Si MOSFETs at the Limits of Scaling", IEEE Transactions on Electron Devices, vol. 40, No. 11, pp. 2103, November 1993.
  24. A. Abramo, L. Baudry, R. Brunetti, R. Castagne, M. Charef, F. Dessenne, P. Dollfus, R. Dutton, W. Engl, R. Fauquembergue, C. Fiegna, M. Fischetti, S. Galdin, N. Goldsman, M. Hackel, C. Hamaguchi, K. Hess, K. Hennacy, P. Hesto, J. Higman, T. Iizuka, C. Jungemann, Y. Kamakura, H. Kosina, T. Kunikiyo, S. Laux, H. Lin, C. Maziar, H. Mizuno, H. Peifer, S. Ramaswamy, N. Sano, P. Scrobohaci, S. Selberherr, M. Takenaka, T. Tang, K. Taniguchi, J. Thobel, R. Thoma, K. Tomizawa, M. Tomizawa, T. Vogelsang, S. Wang, X. Wang, C. Yao, P. Yoder and A. Yoshii, "A Comparison of Numerical Solutions of the Boltzmann Transport Equation for High-Energy Electron Transport in Silicon", IEEE Transactions on Electron Devices, vol. 41, No. 9, pp. 1646-1654, 1994.
  25. S. E. Laux and M. V. Fischetti, "mcplotgl: Graphics for the DAMOCLES Program", Proceedings, 1994 IEDM, p. 217-220, December 1994.
  26. M. V. Fischetti, S. E. Laux and E. Crabbé, "Understanding Hot-Electron Transport in Silicon Devices: Is There a Shortcut?", J. Appl. Phys., vol. 78, No. 2, pp. 1058-1087, 15 July 1995.
  27. S. E. Laux, "On Particle-Mesh Coupling in Monte Carlo Semiconductor Device Simulation", Simulation of Semiconductor Devices and Processes Vol. 6, H. Ryssel and P. Pichler Eds. (Springer-Verlag, Vienna, 1995), pp. 404-407. (Abstract and post-script version).
  28. S. E. Laux and M.V. Fischetti, "Transport Models for Advanced Device Simulation - Truth or Consequences?", Proceedings, 1995 BCTM, pp. 27-34, October 1995. (Abstract and post-script version).
  29. M.V. Fischetti and S. E. Laux, "Monte Carlo Study of Sub-Band-Gap Impact Ionization in Silicon Field-Effect Transistors", Proceedings, 1995 IEDM, pp. 305-308, December 1995. (Abstract and post-script version).
  30. S. E. Laux, "On Particle-Mesh Coupling in Monte Carlo Semiconductor Device Simulation", IEEE Trans. Computer-Aided Design, in press. (Abstract and post-script version).
  31. M. V. Fischetti, S. E. Laux, and E. Crabbé, "Understanding Hot-Electron Transport in Silicon Devices: Is There a Shortcut to Happiness?", in "Hot Carriers in Semiconductors", K. Hess, J.-P. Leburton, and U. Ravaioli Eds. (Plenum, New York 1996), p. 475. ((Abstract).
  32. M. V. Fischetti and S. E. Laux, "Band Stucture, Deformation Potentials and Carrier Mobility in Strained Si, Ge and SiGe Alloys", J. Appl. Phys., vol. 80, No. 4, pp. 2234-2252, August 1996. (Abstract and post-script version).
  33. M. V. Fischetti and S. E. Laux, "Monte Carlo simulation of electron transport in Si: The first 20 years", in Proceedings of the European Solid State Device Research Conference (ESSDERC'96), G. Baccarani and M. Rudan Eds. (Editions Frontières, Gif-sur-Yvette Cedex, 1996), pp. 813-820. (Abstract and post-script version).
  34. M. V. Fischetti, N. Sano, S. E. Laux, and K. Natori, "Full-band-structure theory of high-field transport and impact ionization of electrons and holes in Ge, Si, and GaAs" IEEE Trans. Semicond. Technol. Modeling and Simulation, special issue: Proceedings of the 1996 International Conference of Semiconductor Processes and Devices (SISPAD'96), (Tokyo, Japan, 1996).
  35. S. E. Laux and M. V. Fischetti, "Semiconductor Device Physics and the Modeling of Small Semiconductor Devices", in Some New Directions in Science on Computers, G. V. Bhanot, S. Chen, and P. E. Seiden Eds. (World Scientific, New York, 1997), pp. 114-144. (Abstract and post-script version).
  36. S. E. Laux and M. V. Fischetti, "Monte Carlo Study of Velocity Overshoot in a 0.1-Micron CMOS Inverter", in Proceedings, 1997 IEDM, pp. 877-880, December 1997. (Abstract).

damoclesNO-SPAM@watson.ibm.com
(last updated: July 30, 1999)
Top
[ Research home ] [ IBM home ] [ Order ] [ Privacy ] [ Legal ] [ Contact IBM ]