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DAMOCLES employs a band structure obtained using empirical local or nonlocal pseudopotentials. For the local-pseudopotential calculation, see M. L. Cohen and T. K. Bergstresser, Phys. Rev. 141, 789 (1966), for the nonlocal-pseudopotential calculation, see J. R. Chelikowsky and M. L. Cohen, Phys. Rev. B 14, 556 (1976). The local approximation has been used originally. It is satisfactory in most cases and it still used almost exclusively for the conduction bands. The inclusion of the spin-orbit interaction -- necessary for the valence bands -- has required a re-working of the band structure and the nonlocal approximation has been adopted for the valence bands of those materials for which hole transport has been implemented. A transition to the nonlocal band structure will occur as necessity requires it: High-energy optical processes in Si, for example, can be better investigated with more accurate splittings at the symmetry points that nonlocal pseudopotentials provide. This is one of the reasons why the conduction bands using nonlocal pseudopotential are being recalculated and implemented in DAMOCLES (still in progress).
which is obtained by writing the Schrödinger equation using the expansion over Bloch waves
for the electron wavefunctions. The cutoff
is a numerical necessity and it corresponds to accounting only for waves such that:
The Hamiltonian matrix includes four terms:
a kinetic energy term, the local ionic pseudopotentials, a nonlocal contribution to the
ion (pseudo)potentials, and the spin-orbit interaction:
where:
t being the vector (1,1,1)a/8
where Na is the number of atomic species in the cell, R0 is
is location of the cell, and the sum
is performed over the positions of all ions of the same species s within the cell
in terms of the spherical Bessel functions jl, where d
stands for radius of the well of l-symmetry, dls, for
the ion s
where:
where:
where µ is an empirical parameter, µ1 and µ2
are the spin-orbit energies of the outermost p-type orbitals, and
in terms of the radial functions of these orbitals, ß being a normalization constant
fixed by the condition that Bs(k)/k approaches unity in the
limit of k going to zero.
Calculation
DAMOCLES uses bands computed by solving the eigenvalue problem:
Tables 1
and 2 list the parameters
employed in the calculations. They are mainly from the Cohen-Bergstresser and
Chelikowsky-Cohen work, with minor modifications.
| Ge | Si | AlAs | AlP | AlSb | GaAs | GaP | GaSb | InAs | InP | InSb | |||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| 6.0 | 8.0 | 6.0 | 8.0 | 6.0 | 6.0 | 6.0 | 6.0 | 6.0 | 6.0 | 6.0 | |||
| 3 | -0.238 | -0.224 | -0.220 | -0.210 | -0.210 | -0.230 | -0.220 | -0.215 | -0.230 | -0.265 | -0.200 | ||
| 8 | 0.0038 | 0.055 | 0.043 | 0.040 | 0.040 | 0.010 | 0.030 | 0.005 | 0.000 | 0.010 | 0.000 | 11 | 0.068 | 0.072 | 0.060 | 0.080 | 0.050 | 0.055 | 0.070 | 0.050 | 0.050 | 0.060 | 0.033 |
| 3 | - | - | 0.013 | 0.130 | 0.060 | 0.070 | 0.120 | 0.045 | 0.080 | 0.070 | 0.060 | ||
| 4 | - | - | 0.055 | 0.080 | 0.040 | 0.050 | 0.070 | 0.015 | 0.050 | 0.050 | 0.050 | 11 | - | - | 0.020 | 0.030 | 0.020 | 0.010 | 0.020 | 0.000 | 0.030 | 0.010 | 0.010 |
| Ge | Si | GaAs | InAs | ||||
|---|---|---|---|---|---|---|---|
| 7.5 | 8.0 | 7.5 | 6.0 | 7.5 | |||
| 3 | -0.236 | -0.263 | -0.235 | -0.230 | -0.232 | ||
| 8 | 0.019 | -0.040 | 0.018 | 0.000 | 0.008 | ||
| 11 | 0.056 | 0.033 | 0.050 | 0.045 | 0.047 | ||
| 3 | - | - | 0.075 | 0.055 | 0.064 | ||
| 4 | - | - | 0.060 | 0.045 | 0.052 | ||
| 11 | - | - | 0.005 | 0.007 | 0.006 | ||
| 0.0 | 0.55 | 0.0 | 0.0 | 0.0 | |||
| - | - | 0.0 | 0.0 | 0.0 | |||
| 0.0 | 0.32 | 0.10 | 0.25 | 0.10 | |||
| - | - | 0.0 | 0.35 | 0.0 | |||
| 0.295 | 0.0 | 0.65 | 1.0 | 0.84 | |||
| - | - | 0.25 | 0.50 | 0.38 | |||
| 0.0 | 1.06 | 1.06 | 1.06 | 1.06 | |||
| - | - | 1.27 | 1.27 | 1.27 | |||
| 1.22 | 0.0 | 1.11 | 1.19 | 1.15 | |||
| - | - | 1.33 | 1.43 | 1.38 | |||
| µ | 9.3 | 1.57 | 5.72 | 4.1 | 4.86 | ||
| - | - | 0.334 | 0.757 | 0.558 |
While only the band-structure information of in the 1/48 irreducible wedge of the
first Brillouin Zone (BZ) is necessary, thanks to the 48-fold symmetry of the BZ,
for programming simplicity and speed of execution, band-structure and carrier-phonon
scattering rates are tabulated in the first octant. This is discretized into
5775 cubes with sides of length Dk=0.05
i.e., the energy and their gradients, and
for the 5 lowest-lying conduction bands and the 3 highest-lying valence bands are
calculated and stored in look-up tables. Also stored are the mappings
which allow a fast location of any k-point in the BZ: The point is first mapped
into the first octant, each of its coordinate is divided by the mesh-spacing
Dk, obtaining 3 integers nx, ny, and nz, after taking the integer parts and adding unity.
The mapping above provides the index ß of the cube in which the point is located, since
is the k-point associated to that cube.
The energy and group velocity of a particle with crystal momentum k in band
n is obtained first by mapping k into the BZ, if necessary, then
into the first octant. The sign-transformations necessary to map the k point into the
first octant are stored, since they are needed to convert back the group velocity to the original point outside the first octant.
Finally, the following multi-linear interpolation formulae are used:
where the index ß now runs over the 8 vertices of the cube within which k lies,
each weighted by:
and where a quadratic (linear) interpolation around each vertex is performed for the
energy (velocity):
The 'direct' interpolation described above solves the relatively simple problem
of obtaining the energy and group velocity which are needed to integrate the
equations of motion during free-flights in the Monte Carlo algorithm.
A much tougher problems, however, must be solved when computing scattering rates
and when having to select the final state of a particle after a collision: In these cases
one needs to find a particular k-vector at a given (final) energy.
To solve this problem (the most computing-intensive step in the entire DAMOCLES program),
an additional look-up table is generated. The entire first octant of the BZ is discretized
into two nested meshes: A coarse mesh of 108 cubes of side
Dq=4Dk=0.2
As done before, a pair of mappings
is also defined and stored for fast location within the BZ of arbitrary k-points.
An algorithm due to Gilat and Raubenheimer (G. Gilat and L. J. Raubenheimer, Phys. Rev. 144, 390 (1966);
L. J. Raubenheimer and G. Gilat, Phys. Rev. 157, 586 (1967)) is employed
to define an approximate equi-energy surface at the desired (final) energy within each cube.
This allows the location of k-vector on the equi-energy surface and the
evaluation of the density of states (DOS) at a given energy. The algorithm consists in approximating
the constant-energy surface within each cube as a plane normal to the energy-gradient
computed at the center of the cube. The DOS in the cube is thus given by:
whereAßn is the area of the section obtained by cutting
the cube with the constant-energy plane, expressed as:
where b is the half-size of the side of the cube,
the coefficients aj are the cosines of the angles formed
by the gradient with respect to the cartesian axes, i.e.,
and the coefficients wj are the dimensionless displacements
of the k-point away from the center of the cube at which the equi-energy
'planes' intersect the vertices of the cube:
Thus, in this linear approximation, the maximum and minimum energies bracketing
the energy-range spanned by the cube are:
The dimensionless parameter wß, expressing the shift from the
center of the cube, kßc, along the direction of the gradient required
to reach the plane of constant energy E is given by:
With this machinery it is now possible to perform integrations over equi-energy
surfaces and to select states lying on these surfaces, as required by
rates calculation and selection of final states after scattering. As an example,
the density of states at energy E for all bands and both spin-states is given by:
which will be in joules-1cm-3, if the density-of-states S(GR)
is in 'states/(cube eV)'. In the following we shall always use these units,
by measuring energies in eV and k-vectors in
The rate at which an electron or hole of wavevector k in band n
emits (lower sign) or absorb (upper sign) a phonon is computed using the
adiabatic, harmonic, and weak-coupling approximations using Fermi Golden Rule:
where the carrier-phonon matrix element is given by:
for nonpolar scattering, and by the Fröhlich matrix element:
for polar scattering with longitudinal-optical phonons in the polar III-V materials.
The nonpolar matrix elements are approximated as:
where the acoustic and optical deformation potentials are given in
tables 3
and 4.
Scattering with acoustic phonons is treated considering one longitudinal and
two degenerate transverse modes. Since large-q interactions are frequent
and important in high-energy transport, the dispersion of the LA and TA phonons
is approximated as:
where the zone-edge phonon frequency is given by 4 u(l,t)/a,
where ul,t is the
longitudinal/transverse sound velocity.
Note that this expression underestimates the phonon energy at long wavelengths by a factor
21/2, while it approximates correctly the important zone-edge behavior of the dispersion,
important in fixing the energy-loss rate to acoustic phonons at high energy.
From a numerical point of view, the scattering rate is computed as follows:
For a given k-point in band n, all `cubes' indexed by an integer ß
centered around all points kß in the cubic mesh
in the entire BZ and all bands n' are scanned. Those spanning an energy
interval bracketing the desired final energy are selected. The
Gilat-Raubenheimer algorithm
is employed to evaluate the density of states Sßn'(GR)(wß) at the final 'wavevector'
wß defined above.
The matrix element is finally evaluated and the scattering rate is
obtained by summing over all energy-conserving cubes:
i.e., by summing only over cubes ß such that:
Scattering with ionized impurities is computed using the Born approximation
with phase-shift corrections as given by J. R. Mayer and F. J. Bartoli,
Phys. Rev. B 23, 5413 (1981):
where Nimp(r) is the concentrations of ionized impurities at location r,
the function h(y,s) is the phase-shift correction tabulated by Mayer and
Bartoli, as a function of dimensionless wavevector y (in Bohr units,
taken positive for attractive and negative for repulsive interactions), and of
the screening parameter s (rescaled in order to satisfy Friedel's sum rule). The Coulomb
matrix element is given by:
where Ze is the charge of the impurities, IG(k',n';kn) is
the overlap factor, ß(q,0) is the static, wavevector dependent
screening parameter, as given by A. L. Fetter and J. D. Walecka, Quantum Theory of Many-Particle Systems
(McGraw-Hill, New York, 1971), p. 305.
During the Monte Carlo run, a 'self-scattering' rate is evaluated by computing
the scattering rate ignoring overlap-factor effects. Using the usual discretization of
th BZ discussed above, the 'self-scattering' rate takes the form:
Particles undergoing this fictitious scattering process are subject to another
Monte Carlo step after collision: The collision is accepted or rejected with
probability given by the overalp factor.
The short-range carrier-carrier interaction is treated similarly. Within the same
approximations, the scattering rate for a particle of wavevector k in band
n to collide with any of the 'partner particles' in the Monte carlo ensemble, each with
wavevector p and in a band m, is given by:
where the Coulomb matrix element now has a slightly more complicated form, since the
interaction may involve indistinguishable particles (e-e and h-h scattering). In these cases
the matrix element is given by the sum of the scattering amplitudes for pairs in the triplet and singlet
states of total angular momentum:
where
is the relation connecting the various crystal momenta. As demonstrated by the
significant example of sub-band-gap impact ionization,
the inclusion of dynamic-screening effects, as shown above, is important. These are
treated within the quasi-equilibrium high-temperature limit given by Fetter and Walecka.
During execution, in DAMOCLES a statistical sampling of the carrier distribution is
done, by selecting a 'partner' carrier from all carriers located within a (Thomas-Fermi) screening
radius. Thus, the integral over partner carrier is substituted by a single random
particle and by the total carrier density
A self-scattering rate is then evaluated, ignoring overlap effects:
Note that in case of scattering between distinguishable particles (e-h scattering),
the last term in curly brackets above - the quantum interference term - should not be
included. Finally, as indicated by M. Moskov and A. Moskova, Phys. Rev. B 44,
10794 (1991), the collision rate is divided by 2, to account for the fact that the states of two
particles are affected by the collision, so that the energy and total momentum of the ensemble
is conserved. Once more, a rejection technique is employed to account for overlap-integral
effects: Of all pairs undergoing a self-scattering process, only those satisfying
the rejection-step based on overlap factors are treated as 'real scattering pairs'. Other
pairs are rejected and their states are kept unchanged.
The electron- and hole-initiated impact ionization rates are treated by fitting the rates obtained using either
ab-initio calculations, or the
constant-matrix-element(CME) and
random-k models, whichever is simpler and works best,
to a simple sum of power laws:
where E(i)th are empirical threshold energies. In
Tables 5
and 6
we show the parameters used for those materials for which theoretical calculations
have been performed.
This, of course, represents an isotropic approximation to the actual ionization rate. Moreover,
in DAMOCLES only the carrier energies, but
not their crystal-momenta, are conserved during ionization events. This is a satisfactory
approximation whenever the random-k approximation holds, as it is the case for
electrons in Ge, Si ,and GaAs, and for holes in Ge and GaAs. Other cases (most notably, holes in Si), are controlled
by momentum conservation for processes initiated by carriers with low energy (i.e., close to the ionization
thresholds) and the validity of the isotropic and momentum-randomizing approximations becomes questionable.
The long-range Coulomb interactions can be treated either as an additional Monte Carlo scattering
process, introducing carrier-plasmon scattering, or by letting the self-consistent Poisson/particles
procedure account for plasma effects. The second alternative is employed in DAMOCLES. The reason behind
this choice is twofold:
where n is the maximum carrier density, and mc is the conductivity mass at the band-edge.
Also, in high-doping regions where plasmon effects are significant,
the size of the spatial mesh must be of the order of the inverse local screening length and the number of
simulated particles must be properly chosen, as explained in M. V. Fischetti and S. E. Laux, Phys. Rev. B 38,
9721 (1988) and in S. E. Laux and M. V. Fischetti, in "Monte Carlo Device Simulation: Full Band and Beyond",
Karl Hess editor (Kluwer Academic, Boston, 1991), p 1.
Tabulation
,
each cube identified by a k-vector kß (ß = 1, 5775), lying at the
vertex closer to the origin. For each of these 5775 points, and for 26 additional
vectors (for each of the 5775 points) displaced by 0.001
,
the quantities:
Interpolation
Inverse interpolation
,
and another mesh (the fine mesh), of 512 cubes within each cube of the coarse mech, each of
side dq=Dq/8. Thus, each cube in the fine mesh is
labeled by a pair of indices such that the k-vector at the 'lower' vertex of
the cube is:
.
Scattering rates
Electron-phonon scattering
Ge
Si
AlAs
AlP
AlSb
GaAs
GaP
GaSb
InAs
InP
InSb
Acoustic
(intra-band 1)1.5
1.2
7.0
7.0
2.2
5.0
5.0
5.0
3.4
5.0
5.0
5.4
Acoustic
(interband and
intra-high-bands)1.0
1.5
7.0
7.0
2.2
3.5
5.0
5.0
2.4
5.0
5.0
6.0
Optical
(intra-band 1)2.0
1.75
2.0
3.0
1.0
2.1
1.0
3.0
1.1
2.0
2.0
2.0
Optical
(interband and
intra-high-bands)1.5
1.9
2.0
3.0
1.0
1.5
1.0
3.0
1.1
2.0
2.0
2.5
Ge
Si
GaAs
InAs
Acoustic
4.6
4.6
6.3
6.3
6.3
Optical
9.0
6.6
11.3
11.3
11.3
Coulomb scattering
Impact ionization
Ge
Si
(random-k)Si
(Cartier)GaAs
InAs
P(1)
(eV-bs-1)1.67×1011
2.0×1011
6.25×1110
1.95×108
1.75×107
1.0×1010
Eth(1)
(eV)0.664
1.10
1.10
1.51
0.45
0.727
b(1)
5.5
4.6
2.0
3.0
10.5
3.0
P(2)
(eV-bs-1)-
-
3.0×1012
2.64×1011
4.0×1010
1.5×108
Eth(2)
(eV)-
-
1.80
1.80
0.534
0.727
b(2)
-
-
2.0
6.5
3.0
9.8
P(3)
(eV-bs-1)-
-
6.8×1014
-
-
-
Eth(3)
(eV)-
-
3.45
-
-
-
b(3)
-
-
2.0
-
-
-
Ge
Si
GaAs
InAs
P(1)
(eV-bs-1)4.75×1011
2.0×109
3.41×1010
4.5×1010
2.5×1010
Eth(1)
(eV)0.664
1.10
1.51
0.356
0.727
b(1)
4.5
6.0
3.0
4.5
3.75
P(2)
(eV-bs-1)-
1.0×1012
2.8×1012
2.0×1013
1.5×1012
Eth(2)
(eV)-
1.45
1.90
1.80
1.80
b(2)
-
4.0
4.5
3.5
4.75
Long-range Coulomb interaction
The price paid for this choice is that plasmons (and their coupling to the charge carriers) are treated
semiclassically and not in a correct quantum formalism. In addition, care must be taken to ensure that the
Poisson solution is solved at a frequency comparable to (or larger than) the plasma frequency of the gas
in the highest-density regions of the device. This is given by
Ge
Si
AlAs
AlP
AlSb
GaAs
GaP
GaSb
InAs
InP
InSb
Lattice
constant
a (Å)5.66
5.43
5.66
5.42
6.13
5.65
5.44
6.10
6.05
5.86
6.48
5.86
Static dielectric
constant16.2
11.7
10.06
9.80
12.04
12.90
11.10
15.69
15.15
12.61
16.80
14.09
Dynamic dielectric
constant-
-
8.16
7.54
9.88
10.92
9.08
14.44
12.75
9.61
15.68
11.88
Average
sound velocity
(cm/s)-
-
5.65
7.41
4.25
5.24
5.85
3.97
4.28
5.13
3.41
4.73
Longitudinal
sound velocity
(cm/s)5.4
9.18
-
-
-
-
-
-
-
-
-
-
Transverse
sound velocity
(cm/s)3.2
4.7
-
-
-
-
-
-
-
-
-
-
Longitudinal optical
phonon energy (meV)37.04
61.20
50.09
62.12
36.0
35.36
45.23
25.29
30.08
42.40
24.04
32.56
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