Skip to main content
[ IBM Research ]
[ Find ] [ News ] [ Products ] [ Support ] [ Business solutions ] [ Inside IBM ] [ Interest groups ]
DAMOCLES home Overviews Why DAMOCLES? Small devices Monte Carlo Bands and rates Numerics Physics Devices References and links
Numerical algorithms: band structure and scattering rates

Content:



Band structure

DAMOCLES employs a band structure obtained using empirical local or nonlocal pseudopotentials. For the local-pseudopotential calculation, see M. L. Cohen and T. K. Bergstresser, Phys. Rev. 141, 789 (1966), for the nonlocal-pseudopotential calculation, see J. R. Chelikowsky and M. L. Cohen, Phys. Rev. B 14, 556 (1976). The local approximation has been used originally. It is satisfactory in most cases and it still used almost exclusively for the conduction bands. The inclusion of the spin-orbit interaction -- necessary for the valence bands -- has required a re-working of the band structure and the nonlocal approximation has been adopted for the valence bands of those materials for which hole transport has been implemented. A transition to the nonlocal band structure will occur as necessity requires it: High-energy optical processes in Si, for example, can be better investigated with more accurate splittings at the symmetry points that nonlocal pseudopotentials provide. This is one of the reasons why the conduction bands using nonlocal pseudopotential are being recalculated and implemented in DAMOCLES (still in progress).

Calculation

DAMOCLES uses bands computed by solving the eigenvalue problem:

Eigenvalue problem

which is obtained by writing the Schrödinger equation using the expansion over Bloch waves

Wavefunction expanded over plane waves

for the electron wavefunctions. The cutoff Gmax is a numerical necessity and it corresponds to accounting only for waves such that:

Cut-off energy

The Hamiltonian matrix HGG' includes four terms: a kinetic energy term, the local ionic pseudopotentials, a nonlocal contribution to the ion (pseudo)potentials, and the spin-orbit interaction:

Nonlocal Hamiltonian with spin-orbit interaction

where:

Tables
1 and 2 list the parameters employed in the calculations. They are mainly from the Cohen-Bergstresser and Chelikowsky-Cohen work, with minor modifications.


Table 1. Symmetric and antisymmetric form factors for the local empirical pseudopotentials used for the calculation of the conduction bands. The values of Ecutoff, VS, and VA are in rydbers, of G are in 2pi/a.
G2 Ge Si AlAs AlP AlSb GaAs GaP GaSb InAs InP InSb
Ecutoff 6.0 8.0 6.0 8.0 6.0 6.0 6.0 6.0 6.0 6.0 6.0
VS 3 -0.238 -0.224 -0.220 -0.210 -0.210 -0.230 -0.220 -0.215 -0.230 -0.265 -0.200
8 0.0038 0.055 0.043 0.040 0.040 0.010 0.030 0.005 0.000 0.010 0.000
11 0.068 0.072 0.060 0.080 0.050 0.055 0.070 0.050 0.050 0.060 0.033
VA 3 - - 0.013 0.130 0.060 0.070 0.120 0.045 0.080 0.070 0.060
4 - - 0.055 0.080 0.040 0.050 0.070 0.015 0.050 0.050 0.050
11 - - 0.020 0.030 0.020 0.010 0.020 0.000 0.030 0.010 0.010

Table 2. Symmetric and antisymmetric form factors and other parameters used for the nonlocal empirical pseudopotentials used for the calculation of the valence bands of Si, Ge, GaAs, InAs, and for the valence and conduction bands of In0.53Ga0.47As. The units of Ecutoff, VS, VA Als, and als are in rydbers, of G are in 2pi/a, and of dls in Å.
G2 Ge Si GaAs InAs In0.53Ga0.47As
Ecutoff 7.5 8.0 7.5 6.0 7.5
VS 3 -0.236 -0.263 -0.235 -0.230 -0.232
8 0.019 -0.040 0.018 0.000 0.008
11 0.056 0.033 0.050 0.045 0.047
VA 3 - - 0.075 0.055 0.064
4 - - 0.060 0.045 0.052
11 - - 0.005 0.007 0.006
a01 0.0 0.55 0.0 0.0 0.0
a02 - - 0.0 0.0 0.0
b01 0.0 0.32 0.10 0.25 0.10
b02 - - 0.0 0.35 0.0
A21 0.295 0.0 0.65 1.0 0.84
A22 - - 0.25 0.50 0.38
d01 0.0 1.06 1.06 1.06 1.06
d02 - - 1.27 1.27 1.27
d21 1.22 0.0 1.11 1.19 1.15
d22 - - 1.33 1.43 1.38
µ(10-4) 9.3 1.57 5.72 4.1 4.86
µ21 - - 0.334 0.757 0.558


Tabulation

While only the band-structure information of in the 1/48 irreducible wedge of the first Brillouin Zone (BZ) is necessary, thanks to the 48-fold symmetry of the BZ, for programming simplicity and speed of execution, band-structure and carrier-phonon scattering rates are tabulated in the first octant. This is discretized into 5775 cubes with sides of length Dk=0.05, each cube identified by a k-vector kß (ß = 1, 5775), lying at the vertex closer to the origin. For each of these 5775 points, and for 26 additional vectors (for each of the 5775 points) displaced by 0.001, the quantities:

Energy and gradients on k-mesh

i.e., the energy and their gradients, and

Second-derivative tensor on k-mesh

for the 5 lowest-lying conduction bands and the 3 highest-lying valence bands are calculated and stored in look-up tables. Also stored are the mappings

Locator k-space mapping

which allow a fast location of any k-point in the BZ: The point is first mapped into the first octant, each of its coordinate is divided by the mesh-spacing Dk, obtaining 3 integers nx, ny, and nz, after taking the integer parts and adding unity. The mapping above provides the index ß of the cube in which the point is located, since

Mapping

is the k-point associated to that cube.

Interpolation

The energy and group velocity of a particle with crystal momentum k in band n is obtained first by mapping k into the BZ, if necessary, then into the first octant. The sign-transformations necessary to map the k point into the first octant are stored, since they are needed to convert back the group velocity to the original point outside the first octant. Finally, the following multi-linear interpolation formulae are used:

Interpolation for energy and gradient

where the index ß now runs over the 8 vertices of the cube within which k lies, each weighted by:

Weights at cube-edges

and where a quadratic (linear) interpolation around each vertex is performed for the energy (velocity):

Quadratic extrapolation of energy away from cube-edge

Linear extrapolation of gradient away from cube-edge

Inverse interpolation

The 'direct' interpolation described above solves the relatively simple problem of obtaining the energy and group velocity which are needed to integrate the equations of motion during free-flights in the Monte Carlo algorithm. A much tougher problems, however, must be solved when computing scattering rates and when having to select the final state of a particle after a collision: In these cases one needs to find a particular k-vector at a given (final) energy.

To solve this problem (the most computing-intensive step in the entire DAMOCLES program), an additional look-up table is generated. The entire first octant of the BZ is discretized into two nested meshes: A coarse mesh of 108 cubes of side Dq=4Dk=0.2, and another mesh (the fine mesh), of 512 cubes within each cube of the coarse mech, each of side dq=Dq/8. Thus, each cube in the fine mesh is labeled by a pair of indices such that the k-vector at the 'lower' vertex of the cube is:

k-mesh for inverse interpolation

As done before, a pair of mappings

Inverse mappings

is also defined and stored for fast location within the BZ of arbitrary k-points.

An algorithm due to Gilat and Raubenheimer (G. Gilat and L. J. Raubenheimer, Phys. Rev. 144, 390 (1966); L. J. Raubenheimer and G. Gilat, Phys. Rev. 157, 586 (1967)) is employed to define an approximate equi-energy surface at the desired (final) energy within each cube. This allows the location of k-vector on the equi-energy surface and the evaluation of the density of states (DOS) at a given energy. The algorithm consists in approximating the constant-energy surface within each cube as a plane normal to the energy-gradient computed at the center of the cube. The DOS in the cube is thus given by:

GR DOS

whereAßn is the area of the section obtained by cutting the cube with the constant-energy plane, expressed as:

Area of slice

where b is the half-size of the side of the cube, the coefficients aj are the cosines of the angles formed by the gradient with respect to the cartesian axes, i.e.,

cosines

and the coefficients wj are the dimensionless displacements of the k-point away from the center of the cube at which the equi-energy 'planes' intersect the vertices of the cube:

GR-parameters w in cube

Thus, in this linear approximation, the maximum and minimum energies bracketing the energy-range spanned by the cube are:

E_min and E_max in cube

The dimensionless parameter wß, expressing the shift from the center of the cube, kßc, along the direction of the gradient required to reach the plane of constant energy E is given by:

GR-parameter w

With this machinery it is now possible to perform integrations over equi-energy surfaces and to select states lying on these surfaces, as required by rates calculation and selection of final states after scattering. As an example, the density of states at energy E for all bands and both spin-states is given by:

GR approximation for DOS at energy E

which will be in joules-1cm-3, if the density-of-states S(GR) is in 'states/(cube eV)'. In the following we shall always use these units, by measuring energies in eV and k-vectors in .

Scattering rates

Electron-phonon scattering

The rate at which an electron or hole of wavevector k in band n emits (lower sign) or absorb (upper sign) a phonon is computed using the adiabatic, harmonic, and weak-coupling approximations using Fermi Golden Rule:

Fermi golden-rule for el-ph scattering rate

where the carrier-phonon matrix element is given by:

Nonpolar el-ph matrix element

for nonpolar scattering, and by the Fröhlich matrix element:

Froehlich el-ph matrix element

for polar scattering with longitudinal-optical phonons in the polar III-V materials. The nonpolar matrix elements are approximated as:

Approximation for nonpolar deformation potentials

where the acoustic and optical deformation potentials are given in tables 3 and 4.

Scattering with acoustic phonons is treated considering one longitudinal and two degenerate transverse modes. Since large-q interactions are frequent and important in high-energy transport, the dispersion of the LA and TA phonons is approximated as:

Approximation for phonon dispersion

where the zone-edge phonon frequency is given by 4 u(l,t)/a, where ul,t is the longitudinal/transverse sound velocity. Note that this expression underestimates the phonon energy at long wavelengths by a factor 21/2, while it approximates correctly the important zone-edge behavior of the dispersion, important in fixing the energy-loss rate to acoustic phonons at high energy.

From a numerical point of view, the scattering rate is computed as follows: For a given k-point in band n, all `cubes' indexed by an integer ß centered around all points kß in the cubic mesh in the entire BZ and all bands n' are scanned. Those spanning an energy interval bracketing the desired final energy are selected. The Gilat-Raubenheimer algorithm is employed to evaluate the density of states Sßn'(GR)(wß) at the final 'wavevector' wß defined above. The matrix element is finally evaluated and the scattering rate is obtained by summing over all energy-conserving cubes:

Total el-ph rate

i.e., by summing only over cubes ß such that:

Filter for energy-conserving cubes


Table 3. Conduction band deformation potentials in eV (acoustic) and 108eV/cm (optical). Values labeled 'intra-band 1' are relative to intra-band transitions within the lowest-lying conduction band, those labeled 'inter-band and intra-high-bands' are relative to all other transitions, intraband within higher-energy bands and all inter-band processes.
Ge Si AlAs AlP AlSb GaAs GaP GaSb InAs InP InSb In0.53Ga0.47As
Acoustic
(intra-band 1)
1.5 1.2 7.0 7.0 2.2 5.0 5.0 5.0 3.4 5.0 5.0 5.4
Acoustic
(interband and
intra-high-bands)
1.0 1.5 7.0 7.0 2.2 3.5 5.0 5.0 2.4 5.0 5.0 6.0
Optical
(intra-band 1)
2.0 1.75 2.0 3.0 1.0 2.1 1.0 3.0 1.1 2.0 2.0 2.0
Optical
(interband and
intra-high-bands)
1.5 1.9 2.0 3.0 1.0 1.5 1.0 3.0 1.1 2.0 2.0 2.5

Table 4. Valence band deformation potentials in eV (acoustic) and 108eV/cm (optical).
Ge Si GaAs InAs In0.53Ga0.47As
Acoustic 4.6 4.6 6.3 6.3 6.3
Optical 9.0 6.6 11.3 11.3 11.3

Coulomb scattering

Scattering with ionized impurities is computed using the Born approximation with phase-shift corrections as given by J. R. Mayer and F. J. Bartoli, Phys. Rev. B 23, 5413 (1981):

Born approximation for electron-impurity scattering rate

where Nimp(r) is the concentrations of ionized impurities at location r, the function h(y,s) is the phase-shift correction tabulated by Mayer and Bartoli, as a function of dimensionless wavevector y (in Bohr units, taken positive for attractive and negative for repulsive interactions), and of the screening parameter s (rescaled in order to satisfy Friedel's sum rule). The Coulomb matrix element is given by:

Electron-impurity Coulomb matrix element

where Ze is the charge of the impurities, IG(k',n';kn) is the overlap factor, ß(q,0) is the static, wavevector dependent screening parameter, as given by A. L. Fetter and J. D. Walecka, Quantum Theory of Many-Particle Systems (McGraw-Hill, New York, 1971), p. 305.

During the Monte Carlo run, a 'self-scattering' rate is evaluated by computing the scattering rate ignoring overlap-factor effects. Using the usual discretization of th BZ discussed above, the 'self-scattering' rate takes the form:

Numerical form of el-imp (self)scattering rate

Particles undergoing this fictitious scattering process are subject to another Monte Carlo step after collision: The collision is accepted or rejected with probability given by the overalp factor.

The short-range carrier-carrier interaction is treated similarly. Within the same approximations, the scattering rate for a particle of wavevector k in band n to collide with any of the 'partner particles' in the Monte carlo ensemble, each with wavevector p and in a band m, is given by:

Born approximation for el-el scattering rate

where the Coulomb matrix element now has a slightly more complicated form, since the interaction may involve indistinguishable particles (e-e and h-h scattering). In these cases the matrix element is given by the sum of the scattering amplitudes for pairs in the triplet and singlet states of total angular momentum:

Interparticle Coulomb matrix element

where

Momentum conservation

is the relation connecting the various crystal momenta. As demonstrated by the significant example of sub-band-gap impact ionization, the inclusion of dynamic-screening effects, as shown above, is important. These are treated within the quasi-equilibrium high-temperature limit given by Fetter and Walecka.

During execution, in DAMOCLES a statistical sampling of the carrier distribution is done, by selecting a 'partner' carrier from all carriers located within a (Thomas-Fermi) screening radius. Thus, the integral over partner carrier is substituted by a single random particle and by the total carrier density

Local carrier density

A self-scattering rate is then evaluated, ignoring overlap effects:

Numerical form for e-e (self)scattering rate

Note that in case of scattering between distinguishable particles (e-h scattering), the last term in curly brackets above - the quantum interference term - should not be included. Finally, as indicated by M. Moskov and A. Moskova, Phys. Rev. B 44, 10794 (1991), the collision rate is divided by 2, to account for the fact that the states of two particles are affected by the collision, so that the energy and total momentum of the ensemble is conserved. Once more, a rejection technique is employed to account for overlap-integral effects: Of all pairs undergoing a self-scattering process, only those satisfying the rejection-step based on overlap factors are treated as 'real scattering pairs'. Other pairs are rejected and their states are kept unchanged.

Impact ionization

The electron- and hole-initiated impact ionization rates are treated by fitting the rates obtained using either ab-initio calculations, or the constant-matrix-element(CME) and random-k models, whichever is simpler and works best, to a simple sum of power laws:

Empirical power-law form for impact-ionization rate

where E(i)th are empirical threshold energies. In Tables 5 and 6 we show the parameters used for those materials for which theoretical calculations have been performed. This, of course, represents an isotropic approximation to the actual ionization rate. Moreover, in DAMOCLES only the carrier energies, but not their crystal-momenta, are conserved during ionization events. This is a satisfactory approximation whenever the random-k approximation holds, as it is the case for electrons in Ge, Si ,and GaAs, and for holes in Ge and GaAs. Other cases (most notably, holes in Si), are controlled by momentum conservation for processes initiated by carriers with low energy (i.e., close to the ionization thresholds) and the validity of the isotropic and momentum-randomizing approximations becomes questionable.


Table 5. Parameters for impact ionization rates (electrons)
Ge Si
(random-k)
Si
(Cartier)
GaAs InAs In0.53Ga0.47As
P(1)
(eV-bs-1)
1.67×1011 2.0×1011 6.25×1110 1.95×108 1.75×107 1.0×1010
Eth(1)
(eV)
0.664 1.10 1.10 1.51 0.45 0.727
b(1) 5.5 4.6 2.0 3.0 10.5 3.0
P(2)
(eV-bs-1)
- - 3.0×1012 2.64×1011 4.0×1010 1.5×108
Eth(2)
(eV)
- - 1.80 1.80 0.534 0.727
b(2) - - 2.0 6.5 3.0 9.8
P(3)
(eV-bs-1)
- - 6.8×1014 - - -
Eth(3)
(eV)
- - 3.45 - - -
b(3) - - 2.0 - - -


Table 6. Parameters for impact ionization rates (holes)
Ge Si GaAs InAs In0.53Ga0.47As
P(1)
(eV-bs-1)
4.75×1011 2.0×109 3.41×1010 4.5×1010 2.5×1010
Eth(1)
(eV)
0.664 1.10 1.51 0.356 0.727
b(1) 4.5 6.0 3.0 4.5 3.75
P(2)
(eV-bs-1)
- 1.0×1012 2.8×1012 2.0×1013 1.5×1012
Eth(2)
(eV)
- 1.45 1.90 1.80 1.80
b(2) - 4.0 4.5 3.5 4.75


Long-range Coulomb interaction

The long-range Coulomb interactions can be treated either as an additional Monte Carlo scattering process, introducing carrier-plasmon scattering, or by letting the self-consistent Poisson/particles procedure account for plasma effects. The second alternative is employed in DAMOCLES. The reason behind this choice is twofold:

  1. Plasmons can decay via collisional damping (most efficient in materials with high low-energy scattering, such as Si, Ge, or GaP) or via Landau damping (i.e., the decay of short wavelength plasmons back into single particle excitations, most efficient in high-mobility materials, such as GaAs, InAs, etc.). The latter process is responsible for re-inserting the energy and momentum lost by the carriers to plasmons back into the carrier-gas. If carrier-plasmon coupling is treated as a Monte Carlo scattering process, it is imperative to account for the Landau damping self-consistently. This is a hard problem. On the other side, the self-consistent Poisson/Monte Carlo procedure automatically accounts for this effect.
  2. Since the self-consistent Poisson/Monte Carlo procedure already couples carriers at long range, including carrier-plasmon scattering as a Monte Carlo collision process would result in double counting the long-range Coulomb interaction, unless proper measures were taken to 'dampen' fluctuations of the electrostatic potential during the Poisson-solving step. Therefore, it is more convenient to let the Poisson solution take care of the long-range interactions in a natural way.
The price paid for this choice is that plasmons (and their coupling to the charge carriers) are treated semiclassically and not in a correct quantum formalism. In addition, care must be taken to ensure that the Poisson solution is solved at a frequency comparable to (or larger than) the plasma frequency of the gas in the highest-density regions of the device. This is given by

Plasma frequency

where n is the maximum carrier density, and mc is the conductivity mass at the band-edge. Also, in high-doping regions where plasmon effects are significant, the size of the spatial mesh must be of the order of the inverse local screening length and the number of simulated particles must be properly chosen, as explained in M. V. Fischetti and S. E. Laux, Phys. Rev. B 38, 9721 (1988) and in S. E. Laux and M. V. Fischetti, in "Monte Carlo Device Simulation: Full Band and Beyond", Karl Hess editor (Kluwer Academic, Boston, 1991), p 1.


Table 7. Material parameters
Ge Si AlAs AlP AlSb GaAs GaP GaSb InAs InP InSb In0.53Ga0.47As
Lattice
constant
a (Å)
5.66 5.43 5.66 5.42 6.13 5.65 5.44 6.10 6.05 5.86 6.48 5.86
Static dielectric
constant
16.2 11.7 10.06 9.80 12.04 12.90 11.10 15.69 15.15 12.61 16.80 14.09
Dynamic dielectric
constant
- - 8.16 7.54 9.88 10.92 9.08 14.44 12.75 9.61 15.68 11.88
Average
sound velocity
(105cm/s)
- - 5.65 7.41 4.25 5.24 5.85 3.97 4.28 5.13 3.41 4.73
Longitudinal
sound velocity
(105cm/s)
5.4 9.18 - - - - - - - - - -
Transverse
sound velocity
(105cm/s)
3.2 4.7 - - - - - - - - - -
Longitudinal optical
phonon energy (meV)
37.04 61.20 50.09 62.12 36.0 35.36 45.23 25.29 30.08 42.40 24.04 32.56


Return to the top of the page


APPENDIX: List of mathematical symbols

List of symbols
List of symbols




damoclesNO-SPAM@watson.ibm.com
(last updated: January 26, 1999)
Top
[ Research home ] [ IBM home ] [ Order ] [ Privacy ] [ Legal ] [ Contact IBM ]