DAMOCLES can be useful in simulating devices which are not based upon the semiconductor Si. While such devices have limited application in a ULSI (ultra large scale integration) context, they remain important in medium scale integration (MSI) and "discrete" device applications.

The image below shows the position of electrons in a heterojunction field-effect transistor (HFET). Such devices are also called HEMTs (high electron mobility transistors) or MODFETs (modulation-doped field effect transistors).

The source is in the upper left, and the drain in the upper right. The Schottky gate is depicted as the large black rectangle between source and drain. A GaAs substrate is used, with a channel formed from a delta-doped layer and a InGaAs layer (located just above the horizontal channel of electrons). Above this, an AlGaAs layer acts as an insulator between channel and gate. The device is biased at Vgate=0 and Vdrain=2 V, with the source grounded. Electrons are colored according to their position in the Brillouin zone: gamma-, L- and X-valley electrons are colored blue, green and red, respectively.

The image below shows a three-dimensional rendering of total energy in the conduction band versus position in the device cross section.

The GaAs substrate is to the left, and the source is in the right-top rear, hidden by the potential barrier due to the Schottky gate. The drain is in the front-right lower portion of the figure. The potential channel is clearly delimited in this figure. Electrons are seen to have sufficient kinetic energy such that they are only weakly constrained by the quantum well formed by the thin InGaAs layer (indicated by the double red lines in the bottom plane of the figure near y=0.815 µm).