DAMOCLES: Simulation of semiconductor devices


		Simulation of semiconductor devices

DAMOCLES has been used to model metal-oxide-semiconductor field-effect transistors (MOSFETs), bipolar junction transistors (BJTs), heterojunction field-effect transistors (HFETs), as well as test structures and homogeneous semiconductor samples. DAMOCLES can treat many semiconductor materials, including: Si, Ge, and their alloy SiGe; compound semiconductors GaAs, AlAs, InAs, AlP, GaP, InP, AlSb, GaSb and InSb, and their associated alloys.

Four examples are accessible from the side navigation bar or the following links:

Si n-MOSFET: a 0.15 µm n-MOSFET
Si p-MOSFET: a 0.10 µm p-MOSFET
Si CMOS: a three stage 0.025 µm CMOS inverter chain
Si SOI: a 0.18 µm SOI n-MOSFET
InGaAs HFET: a 0.25 µm $In$ _0.53Ga_0.47As HFET

They highlight the depth, and breadth, of DAMOCLES' functionality. Addition examples are given by the 30 nm double-gate FET and the HESS device (the latter done at Stanford University). After completing a device simulation with DAMOCLES, a dedicated graphics application called "mcplotgl" is invoked to render images from the large quantity of computed data. mcplotgl was developed as a part of the same project by S.E. Laux. The majority of the images shown here were created with the mcplotgl program.

damoclesNO-SPAM@watson.ibm.com

(last updated: July 30, 1999)